Search Results - "Nash, K.J"

Punch-through in short-channel AlGaN/GaN HFETs by Uren, M.J., Nash, K.J., Balmer, R.S., Martin, T., Morvan, E., Caillas, N., Delage, S.L., Ducatteau, D., Grimbert, B., De Jaeger, J.C.

“…Short-channel punch-through effects are demonstrated in 0.17 /spl mu/m gate length AlGaN/GaN single heterojunction field-effect transistors. These take the…”
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On the origin of blue luminescence arising from atmospheric impregnation of oxidized porous silicon by Canham, L.T, Loni, A, Calcott, P.D.J, Simons, A.J, Reeves, C, Houlton, M.R, Newey, J.P, Nash, K.J, Cox, T.I

“…When heavily oxidized porous silicon is stored in ambient air for prolonged periods, a broad blue photoluminescence band with nanosecond decay times gradually…”
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Novel InSb-based quantum well transistors for ultra-high speed, low power logic applications by Ashley, T., Barnes, A.R., Buckle, L., Datta, S., Dean, A.B., Emery, M.T., Fearn, M., Hayes, D.G., Hilton, K.P., Jefferies, R., Martin, T., Nash, K.J., Phillips, T.J., Tang, W.A., Wilding, P.J., Chau, R.

“…InSb-based quantum well field-effect transistors, with gate length down to 0.2 /spl mu/m, are fabricated for the first time. Hall measurements show that room…”
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Ultra high speed, very low power InSb-based quantum well FETs for logic applications by Ashley, T., Barnes, A.R., Datta, S., Dean, A.B., Emeny, M.T., Fearn, M., Hareland, S., Haworth, L., Hayes, D.G., Hilton, K.P., Jefferies, R., Martin, T., Nash, K.J., Phillips, T.J., Tang WHA, Chau, R.

“…For the first time we demonstrate an InSb based quantum well FET, which uses a semi-insulating GaAs substrate, an InSb quantum well confined between layers of…”
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Hole-quasiparticle resonant polaron coupling in quantum wells containing high densities of free carriers by SIMMONDS, P. E, SKOLNICK, M. S, FISHER, T. A, NASH, K.J, SMITH, R. S

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