Search Results - "Naoka Nagamura"

Maximum a posteriori estimation for high-throughput peak fitting in X-ray photoelectron spectroscopy by Matsumura, Tarojiro, Nagamura, Naoka, Akaho, Shotaro, Nagata, Kenji, Ando, Yasunobu

“…We introduce a peak fitting method to estimate the model parameters and the number of peaks without using the conventional trial-and-error approach. The…”
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High-throughput XPS spectrum modeling with autonomous background subtraction for 3d5/2 peak mapping of SnS by Tarojiro Matsumura, Naoka Nagamura, Shotaro Akaho, Kenji Nagata, Yasunobu Ando

“…We propose a fitting model that automatically conducts the background subtraction during high-throughput peak fitting. The fitting model consists of the…”
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Spectrum adapted expectation-maximization algorithm for high-throughput peak shift analysis by Matsumura, Tarojiro, Nagamura, Naoka, Akaho, Shotaro, Nagata, Kenji, Ando, Yasunobu

“…We introduce a spectrum-adapted expectation-maximization (EM) algorithm for high-throughput analysis of a large number of spectral datasets by considering the…”
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Influence of interface dipole layers on the performance of graphene field effect transistors by Nagamura, Naoka, Fukidome, Hirokazu, Nagashio, Kosuke, Horiba, Koji, Ide, Takayuki, Funakubo, Kazutoshi, Tashima, Keiichiro, Toriumi, Akira, Suemitsu, Maki, Horn, Karsten, Oshima, Masaharu

“…The linear band dispersion of graphene's bands near the Fermi level gives rise to its unique electronic properties, such as a giant carrier mobility, and this…”
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Skill-Agnostic analysis of reflection high-energy electron diffraction patterns for Si(111) surface superstructures using machine learning by Yoshinari, Asako, Iwasaki, Yuma, Kotsugi, Masato, Sato, Shunsuke, Nagamura, Naoka

“…Reflection high-energy electron diffraction (RHEED) data are important for the in-situ characterization of surface conditions during physical vapor deposition…”
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Microscopic photoelectron analysis of single crystalline LiCoO2 particles during the charge-discharge in an all solid-state lithium ion battery by Akada, Keishi, Sudayama, Takaaki, Asakura, Daisuke, Kitaura, Hirokazu, Nagamura, Naoka, Horiba, Koji, Oshima, Masaharu, Hosono, Eiji, Harada, Yoshihisa

“…We report synchrotron-based operando soft X-ray microscopic photoelectron spectroscopy under charge-discharge control of single crystalline LiCoO 2 (LCO)…”
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Chemical potential shift in organic field-effect transistors identified by soft X-ray operando nano-spectroscopy by Nagamura, Naoka, Kitada, Yuta, Tsurumi, Junto, Matsui, Hiroyuki, Horiba, Koji, Honma, Itaru, Takeya, Jun, Oshima, Masaharu

“…A chemical potential shift in an organic field effect transistor (OFET) during operation has been revealed by soft X-ray operando nano-spectroscopy analysis…”
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Effect of carrier doping on the electronic states of earth-abundant Fe–Al–Si thermoelectric materials by Tsuda, Shunsuke, Yoshinari, Asako, Takezawa, Shingo, Ohishi, Kenta, Nagamura, Naoka, Zhang, Wenxiong, Iwasaki, Yutaka, Takagiwa, Yoshiki

“…Fe–Al–Si-based thermoelectric (FAST) materials are non-toxic and low-cost materials that can be used for autonomous power supplies to drive internet-of-things…”
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One-Pot Rapid Synthesis of Mo(S,Se)2 Nanosheets on Graphene for Highly Efficient Hydrogen Evolution by Nakayasu, Yuta, Yasui, Yoji, Taniki, Ryosuke, Oizumi, Kotaro, Kobayashi, Hiroaki, Nagamura, Naoka, Tomai, Takaaki, Honma, Itaru

“…The electrocatalytic hydrogen evolution reaction (HER) is known to be an important technique for efficient hydrogen production, and the development of a highly…”
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Growth of MoS2–Nb-doped MoS2 lateral homojunctions: A monolayer p–n diode by substitutional doping by Okada, Mitsuhiro, Nagamura, Naoka, Matsumura, Tarojiro, Ando, Yasunobu, Lu, Anh Khoa Augustin, Okada, Naoya, Chang, Wen-Hsin, Nakanishi, Takeshi, Shimizu, Tetsuo, Kubo, Toshitaka, Irisawa, Toshifumi, Yamada, Takatoshi

“…Monolayer transition metal dichalcogenides (TMDs) have been considered as promising materials for various next-generation semiconductor devices. However,…”
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Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy by Omika, Keiichi, Tateno, Yasunori, Kouchi, Tsuyoshi, Komatani, Tsutomu, Yaegassi, Seiji, Yui, Keiichi, Nakata, Ken, Nagamura, Naoka, Kotsugi, Masato, Horiba, Koji, Oshima, Masaharu, Suemitsu, Maki, Fukidome, Hirokazu

“…With the rapid depletion of communication-frequency resources, mainly due to the explosive spread of information communication devices for the internet of…”
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Spectrum adapted expectation-conditional maximization algorithm for extending high–throughput peak separation method in XPS analysis by Matsumura, Tarojiro, Nagamura, Naoka, Akaho, Shotaro, Nagata, Kenji, Ando, Yasunobu

“…We introduced the spectrum-adapted expectation-conditional maximization (ECM) algorithm to improve the efficiency of the peak fitting of spectral data by…”
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Direct observation of charge transfer region at interfaces in graphene devices by Nagamura, Naoka, Horiba, Koji, Toyoda, Satoshi, Kurosumi, Shodai, Shinohara, Toshihiro, Oshima, Masaharu, Fukidome, Hirokazu, Suemitsu, Maki, Nagashio, Kosuke, Toriumi, Akira

“…Nanoscale spectromicroscopic characterizing technique is indispensable for realization of future high-speed graphene transistors. Highly spatially resolved…”
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Modulation of Electronic States near Electrodes in Graphene Transistors Observed by Operando Photoelectron Nanospectroscopy by Fukidome, Hirokazu, Funakubo, Kazutoshi, Nagamura, Naoka, Horiba, Koji, Tateno, Yasunori, Oshima, Masaharu, Suemitsu, Maki

“…The 2D crystal of sp2-bonded carbon atoms (graphene) is suitable for high-speed device applications owing to its excellent electronic properties and…”
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Electronic States of Quinones for Organic Energy Devices: The Effect of Molecular Structure on Electrochemical Characteristics by Nagamura, Naoka, Taniki, Ryosuke, Kitada, Yuta, Masuda, Asuna, Kobayashi, Hiroaki, Oka, Nobuto, Honma, Itaru

“…The molecular design of organic energy-storage devices relies on correlations between the electrochemical properties of organic materials and their molecular…”
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Charge/discharge mechanism of a new Co-doped Li 2 O cathode material for a rechargeable sealed lithium-peroxide battery analyzed by X-ray absorption spectroscopy by Ogasawara, Yoshiyuki, Hibino, Mitsuhiro, Kobayashi, Hiroaki, Kudo, Tetsuichi, Asakura, Daisuke, Nanba, Yusuke, Hosono, Eiji, Nagamura, Naoka, Kitada, Yuta, Honma, Itaru, Oshima, Masaharu, Okuoka, Shin-ichi, Ono, Hironobu, Yonehara, Koji, Sumida, Yasutaka, Mizuno, Noritaka

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Anisotropic electronic conduction in metal nanofilms grown on a one-dimensional surface superstructure by Nagamura, Naoka, Hobara, Rei, Uetake, Tomoya, Hirahara, Toru, Ogawa, Manami, Okuda, Taichi, He, Ke, Moras, P., Sheverdyaeva, P. M., Carbone, C., Kobayashi, Katsuyoshi, Matsuda, Iwao, Hasegawa, Shuji

“…We performed in situ conductivity measurements by multiple microscopic probes of Ag nanofilms grown on a periodic array of indium atomic wires on Si(111)…”
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Microscopically-Tuned Band Structure of Epitaxial Graphene through Interface and Stacking Variations Using Si Substrate Microfabrication by Fukidome, Hirokazu, Ide, Takayuki, Kawai, Yusuke, Shinohara, Toshihiro, Nagamura, Naoka, Horiba, Koji, Kotsugi, Masato, Ohkochi, Takuo, Kinoshita, Toyohiko, Kumighashira, Hiroshi, Oshima, Masaharu, Suemitsu, Maki

“…Graphene exhibits unusual electronic properties, caused by a linear band structure near the Dirac point. This band structure is determined by the stacking…”
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Resonant photoemission spectroscopy of the cathode material LixMn0.5Fe0.5PO4 for lithium-ion battery by Kurosumi, Shodai, Horiba, Koji, Nagamura, Naoka, Toyoda, Satoshi, Kumigashira, Hiroshi, Oshima, Masaharu, Furutsuki, Sho, Nishimura, Shin-ichi, Yamada, Atsuo, Mizuno, Noritaka

“…We have investigated the change in the electronic structure of LixMn0.5Fe0.5PO4 through the charge process, especially in the transition metal partial DOS…”
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Photoelectron Nano-spectroscopy of Reactive Ion Etching-Induced Damages to the Trench Sidewalls and Bottoms of 4H-SiC Trench-MOSFETs by Oshima, Masaharu, Mori, Daisuke, Takigawa, Aki, Otsuki, Akihiko, Nagamura, Naoka, Konno, Shun, Takahashi, Yoshinobu, Kotsugi, Masato, Nohira, Hiroshi

“…SiC trench structures having a width of 0.6 μm and a depth of 2.0 μm are fabricated by reactive ion etching (RIE) using a gas mixture of SF6, Ar, and O2…”
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