Search Results - "Nandi, Sanjoy Kumar"

Prospect of wind–PV-battery hybrid power system as an alternative to grid extension in Bangladesh by Nandi, Sanjoy Kumar, Ghosh, Himangshu Ranjan

“…A pre-feasibility of wind-PV-battery hybrid system has been performed for a small community in the east-southern part of Bangladesh. Solar radiation resources…”
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High-endurance megahertz electrical self-oscillation in Ti/NbOx bilayer structures by Li, Shuai, Liu, Xinjun, Venkatachalam, Dinesh Kumar, Elliman, Robert Glen

“…Electrical self-oscillation is reported for a Ti/NbOx negative differential resistance device incorporated in a simple electric circuit configuration…”
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A Balanced CMOS Compatible Ternary Memristor-NMOS Logic Family and Its Application by Wang, Xiaoyuan, Chen, Xinhui, Zhou, Jiawei, Liu, Gang, Kang, Sung-Mo, Kumar Nandi, Sanjoy, Elliman, Robert G., Ho-Ching Iu, Herbert

“…Balanced ternary digital logic circuits based on memristors and MOSFET devices are introduced. First, balanced ternary minimum gate TMIN, maximum gate TMAX and…”
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Techno-economical analysis of off-grid hybrid systems at Kutubdia Island, Bangladesh by Kumar Nandi, Sanjoy, Ranjan Ghosh, Himangshu

“…Kutubdia is an island in the southern coast of Bangladesh where mainland grid electricity is not present or would not feasible in near future. Presently,…”
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Dynamics of Leaky Integrate‐and‐Fire Neurons Based on Oxyvanite Memristors for Spiking Neural Networks by Das, Sujan Kumar, Nandi, Sanjoy Kumar, Marquez, Camilo Verbel, Rúa, Armando, Uenuma, Mutsunori, Nath, Shimul Kanti, Zhang, Shuo, Lin, Chun‐Ho, Chu, Dewei, Ratcliff, Tom, Elliman, Robert Glen

“…Neuromorphic computing implemented with spiking neural networks (SNNs) based on volatile threshold switching is an energy‐efficient computing paradigm that may…”
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Resistive switching behavior in HfO2 with Nb as an oxygen exchange layer by Kumar Nandi, Sanjoy, Xinjun Liu, Shuai Li, Kumar Venkatachalam, Dinesh, Belay, Kidane, Elliman, Robert Glen

“…The effect of Nb as an oxygen exchange layer in HfO 2 based resistive random access memory (ReRAM) is investigated. The advantages of Nb are demonstrated by…”
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Origin of Current‐Controlled Negative Differential Resistance Modes and the Emergence of Composite Characteristics with High Complexity by Li, Shuai, Liu, Xinjun, Nandi, Sanjoy Kumar, Nath, Shimul Kanti, Elliman, Robert Glen

“…Current‐controlled negative differential resistance has significant potential as a fundamental building block in brain‐inspired neuromorphic computing…”
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Engineering the Threshold Switching Response of Nb2O5‑Based Memristors by Ti Doping by Nath, Shimul Kanti, Nandi, Sanjoy Kumar, Ratcliff, Thomas, Elliman, Robert Glen

“…Two terminal metal–oxide–metal devices based on niobium oxide thin films exhibit a wide range of non-linear electrical characteristics that have applications…”
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Detection and spatial mapping of conductive filaments in metal/oxide/metal cross-point devices using a thin photoresist layer by Nath, Shimul Kanti, Nandi, Sanjoy Kumar, Li, Shuai, Elliman, Robert Glen

“…A simple means of detecting and spatially mapping volatile and nonvolatile conductive filaments in metal/oxide/metal cross-point devices is introduced, and its…”
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Universal Dynamics Analysis of Locally-Active Memristors and its Applications by Liang, Yan, Zhu, Qian, Wang, Guangyi, Nath, Shimul Kanti, Iu, Herbert Ho-Ching, Nandi, Sanjoy Kumar, Elliman, Robert Glen

“…Locally-active memristor (LAM) is one of the promising candidates of artificial neurons, indicating it has potential applications in neuromorphic computing…”
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Temperature dependent frequency tuning of NbOx relaxation oscillators by Nandi, Sanjoy Kumar, Li, Shuai, Liu, Xinjun, Elliman, Robert G.

“…This study investigates the temperature dependence of current-controlled negative differential resistance (CC-NDR) in Pt/NbOx/TiN devices and its effect on the…”
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High Spatial Resolution Thermal Mapping of Volatile Switching in NbOx-Based Memristor Using In Situ Scanning Thermal Microscopy by Nandi, Sanjoy Kumar, Puyoo, Etienne, Nath, Shimul Kanti, Albertini, David, Baboux, Nicolas, Das, Sujan Kumar, Ratcliff, Thomas, Elliman, Robert G

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Current Localization and Redistribution as the Basis of Discontinuous Current Controlled Negative Differential Resistance in NbOx by Nandi, Sanjoy Kumar, Nath, Shimul Kanti, El‐Helou, Assaad E., Li, Shuai, Liu, Xinjun, Raad, Peter E., Elliman, Robert G.

“…Devices exploiting negative differential resistance (NDR) are of particular interest for analog computing applications, including oscillator‐based neural…”
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Physical Origin of Negative Differential Resistance in V3O5 and Its Application as a Solid‐State Oscillator by Das, Sujan Kumar, Nandi, Sanjoy Kumar, Marquez, Camilo Verbel, Rúa, Armando, Uenuma, Mutsunori, Puyoo, Etienne, Nath, Shimul Kanti, Albertini, David, Baboux, Nicolas, Lu, Teng, Liu, Yun, Haeger, Tobias, Heiderhoff, Ralf, Riedl, Thomas, Ratcliff, Thomas, Elliman, Robert Glen

“…Oxides that exhibit an insulator–metal transition can be used to fabricate energy‐efficient relaxation oscillators for use in hardware‐based neural networks…”
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Reduced Threshold Current in NbO2 Selector by Engineering Device Structure by Liu, Xinjun, Nandi, Sanjoy Kumar, Venkatachalam, Dinesh Kumar, Belay, Kidane, Song, Sannian, Elliman, Robert Glen

“…The leakage current scaling issues for NbO 2 selector devices are investigated. By introducing a rough Pt bottom electrode (BE) (RMS roughness ~2.5 nm) and…”
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Engineering the Threshold Switching Response of Nb 2 O 5 -Based Memristors by Ti Doping by Nath, Shimul Kanti, Nandi, Sanjoy Kumar, Ratcliff, Thomas, Elliman, Robert Glen

“…Two terminal metal-oxide-metal devices based on niobium oxide thin films exhibit a wide range of non-linear electrical characteristics that have applications…”
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Electric Field- and Current-Induced Electroforming Modes in NbO x by Nandi, Sanjoy Kumar, Nath, Shimul Kanti, El-Helou, Assaad E, Li, Shuai, Ratcliff, Thomas, Uenuma, Mutsunori, Raad, Peter E, Elliman, Robert G

“…Electroforming is used to initiate the memristive response in metal/oxide/metal devices by creating a filamentary conduction path in the oxide film. Here, we…”
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Harnessing Metal/Oxide Interlayer to Engineer the Memristive Response and Oscillation Dynamics of Two‐Terminal Memristors by Nath, Shimul Kanti, Sun, Xiao, Nandi, Sanjoy Kumar, Chen, Xi, Wang, Zhongrui, Das, Sujan Kumar, Lei, Wen, Faraone, Lorenzo, Rickard, William D. A., Elliman, Robert G.

“…Devices with volatile memristive switching and self‐sustained relaxation oscillations have received significant attention for their use in neuromorphic…”
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Thermal Conductivity of Amorphous NbOx Thin Films and Its Effect on Volatile Memristive Switching by Nandi, Sanjoy Kumar, Das, Sujan Kumar, Cui, Yubo, El Helou, Assaad, Nath, Shimul Kanti, Ratcliff, Thomas, Raad, Peter, Elliman, Robert G

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Electric Field- and Current-Induced Electroforming Modes in NbOx by Nandi, Sanjoy Kumar, Nath, Shimul Kanti, El-Helou, Assaad E, Li, Shuai, Ratcliff, Thomas, Uenuma, Mutsunori, Raad, Peter E, Elliman, Robert G

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