Search Results - "Namita, H"
-
1
Local lifetime and luminescence efficiency for the near-band-edge emission of freestanding GaN substrates determined using spatio-time-resolved cathodoluminescence
Published in Applied physics letters (19-11-2012)“…Spatio-time-resolved cathodoluminescence measurements were carried out on low threading dislocation density freestanding GaN substrates grown by hydride vapor…”
Get full text
Journal Article -
2
Impacts of anisotropic lattice relaxation on crystal mosaicity and luminescence spectra of m-plane AlxGa1−xN films grown on m-plane freestanding GaN substrates by NH3 source molecular beam epitaxy
Published in Applied physics letters (16-02-2009)“…In-plane anisotropic lattice relaxation was correlated with the crystal mosaicity and luminescence spectra for m-plane AlxGa1−xN films grown on a freestanding…”
Get full text
Journal Article -
3
Phase separation in InAlAs grown by MOVPE with a low growth temperature
Published in Journal of crystal growth (15-11-2004)“…We describe herein a phase separation of InAlAs on an InP substrate grown at a low temperature in terms of carbon doping. Phase separation of the InAlAs bulk…”
Get full text
Journal Article -
4
Lattice distortion due to surface treatment of bias sputtering revealed by extremely asymmetric X-ray diffraction
Published in Applied surface science (15-07-2004)“…Strain fields near InGaP or GaAs surfaces due to bias sputtering (Ar plasma-ion irradiation) for surface cleaning were measured by using a strain-sensitive…”
Get full text
Journal Article Conference Proceeding -
5
XANES study on solid electrolyte interface of Li ion battery
Published in Physica scripta (01-01-2005)Get full text
Journal Article -
6
Ordering structure along the [ 0 0 1 ] direction of InAlAs
Published in Journal of crystal growth (01-12-2004)“…We have found a new type ordering structure in materials containing Indium. Generally conventional natural superlattice (NSL) stacks toward to { 1 1 1 } …”
Get full text
Journal Article -
7
Lattice distortion near InGaP compound semiconductor surface due to surface treatment of bias sputtering
Published in Applied surface science (30-06-2003)“…Strain fields near InGaP surfaces due to bias sputtering are affected by the bias voltage used in this surface-cleaning treatment. Measured rocking curves of…”
Get full text
Journal Article Conference Proceeding -
8
The inflammatory effect of infection with Hymenolepis diminuta via the increased expression and activity of COX-1 and COX-2 in the rat jejunum and colon
Published in Experimental parasitology (01-10-2016)“…The aim of this study was to determine whether Hymenolepis diminuta may affect the expression and activity of cyclooxygenase 1 (COX-1) and cyclooxygenase 2…”
Get full text
Journal Article -
9
Radio-frequency ablation of trigeminal ganglion for refractory pain of bilateral trigeminal neuralgia in a patient with multiple sclerosis
Published in Indian Journal of Pain (01-05-2018)“…Trigeminal neuralgia (TN) is one of the most excruciating variety of craniofacial neuralgias with 12% prevalence in general population. It can be either…”
Get full text
Journal Article -
10
XAFS and TOF–SIMS analysis of SEI layers on electrodes
Published in Journal of power sources (01-06-2003)“…We have used X-ray absorption fine structure (XAFS) in order to analyze the solid electrolyte interface (SEI) layer on the graphite anode and the LiCoO 2…”
Get full text
Journal Article -
11
Impacts of anisotropic lattice relaxation on crystal mosaicity and luminescence spectra of m -plane Al x Ga 1 − x N films grown on m -plane freestanding GaN substrates by NH 3 source molecular beam epitaxy
Published in Applied physics letters (20-02-2009)“…In-plane anisotropic lattice relaxation was correlated with the crystal mosaicity and luminescence spectra for m -plane Al x Ga 1 − x N films grown on a…”
Get full text
Journal Article -
12
Impacts of anisotropic lattice relaxation on crystal mosaicity and luminescence spectra of m-plane Al{sub x}Ga{sub 1-x}N films grown on m-plane freestanding GaN substrates by NH{sub 3} source molecular beam epitaxy
Published in Applied physics letters (16-02-2009)“…In-plane anisotropic lattice relaxation was correlated with the crystal mosaicity and luminescence spectra for m-plane Al{sub x}Ga{sub 1-x}N films grown on a…”
Get full text
Journal Article -
13
Ordering structure along the [001] direction of InA1As
Published in Journal of crystal growth (2004)Get full text
Conference Proceeding