Search Results - "Namita, H"

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  1. 1

    Local lifetime and luminescence efficiency for the near-band-edge emission of freestanding GaN substrates determined using spatio-time-resolved cathodoluminescence by Ishikawa, Y, Tashiro, M, Hazu, K, Furusawa, K, Namita, H, Nagao, S, Fujito, K, Chichibu, S F

    Published in Applied physics letters (19-11-2012)
    “…Spatio-time-resolved cathodoluminescence measurements were carried out on low threading dislocation density freestanding GaN substrates grown by hydride vapor…”
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    Journal Article
  2. 2

    Impacts of anisotropic lattice relaxation on crystal mosaicity and luminescence spectra of m-plane AlxGa1−xN films grown on m-plane freestanding GaN substrates by NH3 source molecular beam epitaxy by Hoshi, T., Hazu, K., Ohshita, K., Kagaya, M., Onuma, T., Fujito, K., Namita, H., Chichibu, S. F.

    Published in Applied physics letters (16-02-2009)
    “…In-plane anisotropic lattice relaxation was correlated with the crystal mosaicity and luminescence spectra for m-plane AlxGa1−xN films grown on a freestanding…”
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    Journal Article
  3. 3

    Phase separation in InAlAs grown by MOVPE with a low growth temperature by Kurihara, K., Takashima, M., Sakata, K., Ueda, R., Takahara, M., Ikeda, H., Namita, H., Nakamura, T., Shimoyama, K.

    Published in Journal of crystal growth (15-11-2004)
    “…We describe herein a phase separation of InAlAs on an InP substrate grown at a low temperature in terms of carbon doping. Phase separation of the InAlAs bulk…”
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    Journal Article
  4. 4

    Lattice distortion due to surface treatment of bias sputtering revealed by extremely asymmetric X-ray diffraction by Yoshida, Y, Akimoto, K, Emoto, T, Kikuchi, S, Itagaki, K, Namita, H

    Published in Applied surface science (15-07-2004)
    “…Strain fields near InGaP or GaAs surfaces due to bias sputtering (Ar plasma-ion irradiation) for surface cleaning were measured by using a strain-sensitive…”
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    Journal Article Conference Proceeding
  5. 5
  6. 6

    Ordering structure along the [ 0 0 1 ] direction of InAlAs by Kurihara, K., Namita, H., Ueda, R., Takashima, M., Akimoto, K., Sakata, K., Takahashi, T., Nakamura, T., Shimoyama, K.

    Published in Journal of crystal growth (01-12-2004)
    “…We have found a new type ordering structure in materials containing Indium. Generally conventional natural superlattice (NSL) stacks toward to { 1 1 1 } …”
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    Journal Article
  7. 7

    Lattice distortion near InGaP compound semiconductor surface due to surface treatment of bias sputtering by Emoto, T., Yoshida, Y., Akimoto, K., Ichimiya, A., Kikuchi, S., Itagaki, K., Namita, H.

    Published in Applied surface science (30-06-2003)
    “…Strain fields near InGaP surfaces due to bias sputtering are affected by the bias voltage used in this surface-cleaning treatment. Measured rocking curves of…”
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    Journal Article Conference Proceeding
  8. 8

    The inflammatory effect of infection with Hymenolepis diminuta via the increased expression and activity of COX-1 and COX-2 in the rat jejunum and colon by Kosik-Bogacka, D.I., Baranowska-Bosiacka, I., Kolasa-Wołosiuk, A., Lanocha-Arendarczyk, N., Gutowska, I., Korbecki, J., Namięta, H., Rotter, I.

    Published in Experimental parasitology (01-10-2016)
    “…The aim of this study was to determine whether Hymenolepis diminuta may affect the expression and activity of cyclooxygenase 1 (COX-1) and cyclooxygenase 2…”
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    Journal Article
  9. 9

    Radio-frequency ablation of trigeminal ganglion for refractory pain of bilateral trigeminal neuralgia in a patient with multiple sclerosis by Preeti P Doshi, Namita H Parikh

    Published in Indian Journal of Pain (01-05-2018)
    “…Trigeminal neuralgia (TN) is one of the most excruciating variety of craniofacial neuralgias with 12% prevalence in general population. It can be either…”
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    Journal Article
  10. 10

    XAFS and TOF–SIMS analysis of SEI layers on electrodes by Ota, Hitoshi, Akai, Toshio, Namita, Hideo, Yamaguchi, Shoji, Nomura, Masaharu

    Published in Journal of power sources (01-06-2003)
    “…We have used X-ray absorption fine structure (XAFS) in order to analyze the solid electrolyte interface (SEI) layer on the graphite anode and the LiCoO 2…”
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    Journal Article
  11. 11

    Impacts of anisotropic lattice relaxation on crystal mosaicity and luminescence spectra of m -plane Al x Ga 1 − x N films grown on m -plane freestanding GaN substrates by NH 3 source molecular beam epitaxy by Hoshi, T., Hazu, K., Ohshita, K., Kagaya, M., Onuma, T., Fujito, K., Namita, H., Chichibu, S. F.

    Published in Applied physics letters (20-02-2009)
    “…In-plane anisotropic lattice relaxation was correlated with the crystal mosaicity and luminescence spectra for m -plane Al x Ga 1 − x N films grown on a…”
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    Journal Article
  12. 12

    Impacts of anisotropic lattice relaxation on crystal mosaicity and luminescence spectra of m-plane Al{sub x}Ga{sub 1-x}N films grown on m-plane freestanding GaN substrates by NH{sub 3} source molecular beam epitaxy by Hoshi, T., Hazu, K., Ohshita, K., Kagaya, M., Onuma, T., Chichibu, S. F., Fujito, K., Namita, H.

    Published in Applied physics letters (16-02-2009)
    “…In-plane anisotropic lattice relaxation was correlated with the crystal mosaicity and luminescence spectra for m-plane Al{sub x}Ga{sub 1-x}N films grown on a…”
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    Journal Article
  13. 13