Search Results - "Nam, P.S."

The effect of gate metals on manufacturability of 0.1 μm metamorphic AlSb/InAs HEMTs for ultralow-power applications by Chou, Y.C., Lee, L.J., Yang, J.M., Lange, M.D., Nam, P.S., Lin, C.H., Quach, H., Gutierrez, A.L., Barsky, M.E., Wojtowicz, M., Oki, A.K., Block, T.R., Boos, J.B., Bennett, B.R., Papanicolaou, N.A.

“…Four types of gate metallization were investigated to evaluate the manufacturability of 0.1 mum AlSb/InAs HEMTs. It has been found that device performance…”
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Manufacturable tri-stack AlSb/INAS HEMT low-noise amplifiers using wafer-level-packaging technology for light-weight and ultralow-power applications by Chou, Y.C., Chang-Chien, P., Yang, J.M., Nishimoto, M.Y., Hennig, K., Lange, M.D., Zeng, X., Parlee, M.R., Lin, C.H., Lee, L.S., Nam, P.S., Wojtowicz, M., Barsky, M.E., Oki, A.K., Boos, J.B., Bennett, B.R., Papanicolaou, N.A.

“…A wafer-level-packaging technology was used to integrate the 0.1 mum AlSb/InAs HEMT low-noise amplifiers with power amplifiers, switches and phase shifters to…”
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0.1 um n+-InAs-AlSb-InAs HEMT MMIC Technology for Phased-Array Applications by Lin, C.H., Chou, Y.C., Lange, M.D., Yang, J.M., Nishimoto, M.Y., Lee, J., Nam, P.S., Boos, J.B., Bennett, B.R., Papanicolaou, N.A., Tsai, R.S., Gutierrez, A.L., Barsky, M.E., Chin, T.P., Wojtowicz, M., Lai, R., Oki, A.K.

“…-A 0.1 mum n+-InAs-AlSb-InAs MMIC technology was developed for phased-array applications requiring ultralow power consumption. An n doped cap layer was…”
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0.1 μm In02Al08Sb-InAs HEMT low-noise amplifiers for ultralow-power applications by Chou, C., Lange, M.D., Bennett, B.R., Boos, J.B., Yang, J.M., Papanicolaou, N.A., Lin, C.H., Lee, L.J., Nam, P.S., Gutierrez, A.L., Farkas, D.S., Tsai, R.S., Wojtowicz, M., Chin, T.P., Oki, A.K.

“…A 0.1 μm In 02 Al 08 Sb-InAs HEMT MMIC technology was developed for phased-array applications with ultralow-power and oxidation-free requirements. An In 02 Al…”
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Ultra-low-power HEMT and HBT devices and circuit demonstrations by Lange, M.D., Hsing, R., Poust, B.D., Kraus, J.L., Nam, P.S., Lee, L.J., Li, D., Gutierrez-Aitken, A.L., Noori, A.M., Hayashi, S.L., Goorsky, M.S., Cavus, A., Tsai, R.S., Monier, C., Deal, W.R., Chan, B., Cox, A.C., Pascua, D.G., Sandhu, R.S.

“…During the past four years, the Defense Advanced Research Project Agency (DARPA) through its antimonide-based compound semiconductor (ABCS) program has…”
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