Search Results - "Nam, O.H."

High-Performance Blue InGaN Laser Diodes With Single-Quantum-Well Active Layers by Ryu, H.Y., Nam, O. H., Park, Y. J., Shim, J. I., Ha, K.H., Lee, S.N., Jang, T., Son, J. K., Paek, H. S., Sung, Y. J., Kim, H. K., Kim, K. S.

“…The authors report on the high-performance blue laser diodes (LDs) with an emission wavelength of ~448 nm employing InGaN single-quantum-well (QW) active…”
Get full text

Low resistance and reflective Mg-doped indium oxide-Ag ohmic contacts for flip-chip light-emitting diodes by Song, J.-O., Dong-Seok Leem, Kwak, J.S., Nam, O.H., Park, Y., Tae-Yeon Seong

“…We have investigated an Mg-doped In/sub x/O/sub y/(MIO)-Ag scheme for the formation of high-quality ohmic contacts to p-type GaN for flip-chip light-emitting…”
Get full text

Characteristics of Si and Mg doping in a-plane GaN grown on r-plane sapphire by Lee, Sung-Nam, Paek, H.S., Son, J.K., Sakong, T., Nam, O.H., Park, Y.

“…Non-polar a-plane GaN without triangular pits was grown on r-plane sapphire substrates using metalorganic chemical vapor deposition (MOCVD) without a…”
Get full text

Single-mode blue-violet laser diodes with low beam divergence and high COD level by Ryu, H.Y., Ha, K.H., Lee, S.N., Choi, K.K., Jang, T., Son, J.K., Chae, J.H., Chae, S.H., Paek, H.S., Sung, Y.J., Sakong, T., Kim, H.G., Kim, K.S., Kim, Y.H., Nam, O.H., Park, Y.J.

“…We demonstrate GaN-based high-power single transverse-mode laser diodes (LDs) emitting at 405 nm. LD structures are designed to exhibit a high level of…”
Get full text

Behaviors of Emission Wavelength Shift in AlInGaN-Based Green Laser Diodes by Sung-Nam Lee, Ryu, H.Y., Paek, H.S., Son, J.K., Sung, Y.J., Kim, K.S., Kim, H.K., Kim, H., Jang, T., Ha, K.H., Nam, O.H., Park, Y.

“…InGaN quantum-well (QW) green laser diodes (LDs) with an emission wavelength of 483.7 nm were characterized by controlling the injection pulsewidth. The…”
Get full text

Carrier transport by formation of two-dimensional hole gas in p-type Al0.1Ga0.9N/GaN superlattice for AlGaInN-based laser diode by LEE, Sung-Nam, JANG, T, SON, J. K, PAEK, H. S, SAKONG, T, YOON, E, NAM, O. H, PARK, Y

Get full text

Customized surgical guide with a bite block and retraction arm for a deeply impacted odontoma; a technical note by Lee, H., Choi, S., Chae, Y.K., Jung, J., Choi, S.C., Nam, O.H.

“…Odontomas can cause impaction of permanent teeth. During the removal of odontomas associated with an impacted tooth, minimally-invasive surgical approaches are…”
Get full text

An easy way to secure catheter in position during marsupialization procedure by Chae, Y.K., Nam, O.H., Kim, M.S., Lee, H.-S., Kwon, Y.-D., Choi, S.C.

“…Marsupialization is the conservative treatment for cystic lesion in children. This technique requires maintaining the patency between the cyst and oral cavity…”
Get full text

Improved thermal stability of GaN blue laser diode by Ti/Pt/Au, W/Au and Cu bonding layers by Jang, T., Kwak, J.S., Sung, Y.J., Choi, K.K., Nam, O.H., Park, Y.

“…The thermal stabilities of Ti/Pt/Au, W/Au and Cu bonding layers on GaN blue laser diode were investigated by measuring the series resistances with respect to…”
Get full text

Growth and characterization of LEO substrates by Paek, H.S., Sakong, T., Lee, S.N., Son, J.K., Ryu, H.Y., Nam, O.H., Park, Y.

Get full text

Carrier transport by formation of two-dimensional hole gas in p-type Al 0.1Ga 0.9N/GaN superlattice for AlGaInN-based laser diode by Lee, Sung-Nam, Jang, T., Son, J.K., Paek, H.S., Sakong, T., Yoon, E., Nam, O.H., Park, Y.

“…We have investigated the electrical quality of Mg-doped p-type Al 0.1Ga 0.9N/GaN superlattice (SL) structures grown by metalorganic chemical vapor deposition…”
Get full text

Growth and characterization of Al x Ga 1 - x N LEO substrates by Paek, H.S., Sakong, T., Lee, S.N., Son, J.K., Ryu, H.Y., Nam, O.H., Park, Y.

“…We have studied the effect of Al composition on the properties of Al x Ga 1 - x N LEO substrates. Al x Ga 1 - x N LEO substrates were prepared on…”
Get full text

New contact resistivity characterization method for non-uniform ohmic contacts on GaN by Jang, T., Kwak, J.S., Nam, O.H., Park, Y.

“…Uniform and non-uniform ohmic contacts on GaN were investigated by using a newly developed transfer length method (narrow TLM). The contact resistivity and the…”
Get full text

Growth of InGaN multiple quantum wells and GaN eplilayer on GaN substrate by Lee, Sung-Nam, Paek, H.S., Son, J.K., Sakong, T., Yoon, E., Nam, O.H., Park, Y.

“…We investigated that the surface morphology of GaN epilayers was significantly affected by the surface tilt orientation of GaN substrate. Surface morphologies…”
Get full text

Micro-crack-free high power blue-violet GaN-based laser diodes grown on maskless epitaxial lateral overgrown GaN/sapphire by Lee, Sung-Nam, Paek, H.S., Ryu, H.Y., Son, J.K., Sakong, T., Jang, T., Choi, K.K., Sung, Y.J., Kim, Y.H., Kim, H.K., Chae, S.H., Ha, K.H., Chae, J.H., Kim, K.S., Kwak, J.S., Nam, O.H., Park, Y.

“…We observed two types of cracks with the direction of 〈1 1 2¯ 0〉 which are perpendicular to the 〈1 1¯ 0 0〉 stripe direction of seed GaN in the GaN-based laser…”
Get full text

GaN-based light-emitting diodes with Ni–Mg solid solution/Au p-type ohmic contact by Song, June-O, Leem, Dong-Seok, Kim, Sang-Ho, Kwak, J.S, Nam, O.H, Park, Y, Seong, Tae-Yeon

“…Novel Ni–Mg solid solution (5 nm)/Au (5 nm) schemes are investigated for the development of ohmic contacts to p-type GaN. It is shown that the samples annealed…”
Get full text

Silicon doping effect on the optical properties of In0.15Ga0.85N/In0.015Ga0.985N quantum wells by RYU, M.-Y, YU, Y. J, KIM, T. I, SHIN, E.-J, YU, P. W, LEE, J. I, YU, S. K, OH, E. S, NAM, O. H, SONE, C. S, PARK, Y. J

Get full text

Carrier Transport Mechanism of Pd/Pt/Au Ohmic Contacts to p-GaN in InGaN Laser Diode by Kwak, Joon Seop, Cho, J., Chae, S., Choi, K.K., Sung, Y.J., Lee, S.N., Nam, O.H., Park, Y.

“…The dependence of contact resistivity on the carrier concentration for the non‐alloyed Pd contacts on p‐GaN and the temperature dependence measurements of…”
Get full text

Silicon doping effect on the optical properties of In 0.15Ga 0.85N/In 0.015Ga 0.985N quantum wells by Ryu, M.-Y, Yu, Y.J, Shin, E.-j, Yu, P.W, Lee, J.I, Yu, S.K, Oh, E.S, Nam, O.H, Sone, C.S, Park, Y.J, Kim, T.I

“…We have studied the effects of Si doping on the optical properties of In 0.15Ga 0.85N/In 0.015Ga 0.985N multiple quantum wells (MQWs) by photoluminescence (PL)…”
Get full text

Excitation Density Dependence of Photoluminescence and Barrier Doping Effect in InxGa1-xN Quantum Wells by Oh, E., Sone, C.S., Park, H., Nam, O.H., ParkOh, Y.

“…The effect of Si‐doping in barriers has been investigated in photoluminescence (PL) spectra of 10 period In0.1Ga0.9N/ In0.02Ga0.98N quantum wells with various…”
Get full text