Search Results - "Nalin Mehta, Ankit"
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Two-Dimensional Crystal Grain Size Tuning in WS2 Atomic Layer Deposition: An Insight in the Nucleation Mechanism
Published in Chemistry of materials (13-11-2018)“…When two-dimensional (2D) group-VI transition metal dichalcogenides such as tungsten disulfide (WS2) are grown by atomic layer deposition (ALD) for atomic…”
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Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers
Published in NPJ 2D materials and applications (28-01-2021)“…The cleaning of two-dimensional (2D) materials is an essential step in the fabrication of future devices, leveraging their unique physical, optical, and…”
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High-Density Patterning of InGaZnO by CH4: a Comparative Study of RIE and Pulsed Plasma ALE
Published in ACS applied materials & interfaces (27-07-2022)“…InGaZnO (IGZO)-based thin-film transistors and selector diodes are increasingly investigated for a broad range of applications such as high-resolution…”
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Engineering Wafer-Scale Epitaxial Two-Dimensional Materials through Sapphire Template Screening for Advanced High-Performance Nanoelectronics
Published in ACS nano (22-06-2021)“…In view of its epitaxial seeding capability, c-plane single crystalline sapphire represents one of the most enticing, industry-compatible templates to realize…”
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Chemical Vapor Deposition of a Single-Crystalline MoS2 Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface
Published in ACS nano (30-01-2024)“…Recently, a step-flow growth mode has been proposed to break the inherent molybdenum disulfide (MoS2) crystal domain bimodality and yield a single-crystalline…”
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On the van der Waals Epitaxy of Homo-/Heterostructures of Transition Metal Dichalcogenides
Published in ACS applied materials & interfaces (17-06-2020)“…Layered materials held together by weak van der Waals (vdW) interactions are a promising class of materials in the field of nanotechnology. Besides the…”
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Grain-Boundary-Induced Strain and Distortion in Epitaxial Bilayer MoS2 Lattice
Published in Journal of physical chemistry. C (19-03-2020)“…Grain boundaries between 60° rotated and twinned crystals constitute the dominant type of extended line defects in two-dimensional transition metal…”
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Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
Published in Chemistry of materials (11-04-2017)“…Two-dimensional (2D) transition metal dichalcogenides are potential low dissipative semiconductor materials for nanoelectronic devices. Such applications…”
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Epitaxial registry and crystallinity of MoS2 via molecular beam and metalorganic vapor phase van der Waals epitaxy
Published in Applied physics letters (20-07-2020)“…Two-dimensional transition metal dichalcogenide (TMD) semiconductors have risen as an important material class for novel nanoelectronic applications…”
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Understanding noninvasive charge transfer doping of graphene: a comparative study
Published in Journal of materials science. Materials in electronics (01-04-2018)“…In this work, we systematically investigate and compare noninvasive doping of chemical vapor deposition graphene with three molecule dopants through…”
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Process-Induced Modulation of Domain Orientations during WS2 Epitaxy by Metal–Organic Chemical Vapor Deposition on Sapphire
Published in ACS applied electronic materials (24-09-2024)“…Single monolayers (MLs) of transition metal dichalcogenides (TMDs) like molybdenum disulfide (MoS2) and tungsten disulfide (WS2) are promising semiconductors…”
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Rapid and large FOV mapping of 60° grains in epitaxial MX2 with a segmented detector
Published in BIO web of conferences (2024)Get full text
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Top-Gate Stack Engineering Featuring a High‑κ Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal Dichalcogenides
Published in ACS applied electronic materials (25-06-2024)“…Atomic layer deposition (ALD) of gate dielectrics on two-dimensional transition-metal dichalcogenides (2D TMDs) is challenging due to their chemically inert…”
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Understanding noninvasive charge transfer doping of graphene: a comparative study
Published in Journal of materials science. Materials in electronics (01-04-2018)Get full text
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High-Density Patterning of InGaZnO by CH 4 : a Comparative Study of RIE and Pulsed Plasma ALE
Published in ACS applied materials & interfaces (27-07-2022)“…InGaZnO (IGZO)-based thin-film transistors and selector diodes are increasingly investigated for a broad range of applications such as high-resolution…”
Get full text
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17
Chemical Vapor Deposition of a Single-Crystalline MoS 2 Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface
Published in ACS nano (30-01-2024)“…Recently, a step-flow growth mode has been proposed to break the inherent molybdenum disulfide (MoS ) crystal domain bimodality and yield a single-crystalline…”
Get full text
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Direct Assessment of Defective Regions in Monolayer MoS 2 Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements
Published in ACS nano (16-04-2024)“…Implementing two-dimensional materials in field-effect transistors (FETs) offers the opportunity to continue the scaling trend in the complementary…”
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Direct Assessment of Defective Regions in Monolayer MoS2 Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements
Published in ACS nano (16-04-2024)“…Implementing two-dimensional materials in field-effect transistors (FETs) offers the opportunity to continue the scaling trend in the complementary…”
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Grain-Boundary-Induced Strain and Distortion in Epitaxial Bilayer MoS 2 Lattice
Published in Journal of physical chemistry. C (19-03-2020)Get full text
Journal Article