Search Results - "Nakhutsrishvili, I."

On the asymptotic growth of evaporating scale by Nakhutsrishvili, I G, Adamiya, A Z

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Preparation of germanium oxynitride films in ammonia by NAKHUTSRISHVILI, I. G, DZHISHIASHVILI, D. A, MKERVALISHVILI, Z. I

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Preparation of Ge3N4 films on the germanium surface by NAKHUTSRISHVILI, I. G, DZHISHIASHVILI, D. A, MIMINOSHVILI, E. B, MUSHKUDIANI, M. A

“…Single-phase Β-Ge3N4 films free of GeO2 and oxygen impurities were prepared on the surface of single-crystal germanium by nitriding with dry ammonia at 800‡C…”
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Reaction of Ge with NH 3 + H 2 O Vapor by Nakhutsrishvili, I. G.

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A study of solid phase reactions at the Ge-GeO/sub 2/ interface by Jishiashvili, D., Shiolashvili, Z., Gobronidze, V., Nakhutsrishvili, I.

“…The sublimation of GeO molecules formed by the solid phase reaction between a-Ge and a-GeO/sub 2/ films (Ge+GeO/sub 2/=2GeO↑) was studied using vacuum…”
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AES study of thermally treated GeO/sub 2//(111)GaAs structures by Jishiashvili, D., Gobsch, G., Ecke, G., Shiolashvili, Z., Gobronidze, V., Nakhutsrishvili, I.

“…Auger electron spectroscopy (AES) was used to study the solid phase surface reactions and Ge diffusion process during the thermal treatment (500-750/spl deg/C)…”
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Development of the amorphous, high resistivity Ge:(O,N) films for radiation-hardened MIS device applications by Jishiashvili, D., Shiolashvili, Z., Janelidze, R., Gobronidze, V., Kutelia, E., Mosidze, L., Nakhutsrishvili, I., Katsiashvili, M.

“…Application of amorphous, high resistivity O- and N-doped Ge films is proposed to solve some radiation hardness problems. The new type of insulating a-Ge:(O,N)…”
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