Search Results - "Nakashima, Hisao"
-
1
Improvements to Digital Carrier Phase Recovery Algorithm for High-Performance Optical Coherent Receivers
Published in IEEE journal of selected topics in quantum electronics (01-09-2010)“…The Viterbi-and-Viterbi (V-V) algorithm is widely used to recover the carrier phase in optical digital coherent receivers. For simplicity, the basic V-V…”
Get full text
Journal Article -
2
Transceiver Imbalances Compensation and Monitoring by Receiver DSP
Published in Journal of lightwave technology (01-09-2021)“…In-phase and quadrature (IQ) imbalances in optical transceiver, such as amplitude imbalance, phase imbalance, and IQ skew, can cause serious system performance…”
Get full text
Journal Article -
3
240 GBd PDM-16QAM Single-Carrier Coherent Transmission beyond 130 km SSMF for a Bandwidth Limited System with Low Power Consumption DSP
Published in Journal of lightwave technology (06-11-2024)“…In this paper, the novel and simple transceiver digital signal processing for a coherent system with Tomlinson-Harashima pre-coding was proposed and digitally…”
Get full text
Journal Article -
4
Performance Evaluation of WDM Channel Transmission for Probabilistic Shaping With Partial Multilevel Coding
Published in Journal of lightwave technology (01-05-2021)“…We propose partial multilevel coding (MLC) for optical communications with probabilistic shaping (PS), which improves the signal-to-noise ratio performance and…”
Get full text
Journal Article -
5
Multilevel Coding With Spatially Coupled Repeat-Accumulate Codes for High-Order QAM Optical Transmission
Published in Journal of lightwave technology (15-01-2019)“…We propose multilevel coding (MLC) with spatially coupled codes to increase the net coding gain (NCG) and reduce the power consumption of forward error…”
Get full text
Journal Article -
6
Characterization of Nonlinear Distortion in Intensity Modulation and Direct Detection Systems
Published in Journal of lightwave technology (01-06-2023)“…Intensity modulation and direct detection (IM-DD) systems are widely used in short-reach optical networks. Thus, developing a practical and accurate method to…”
Get full text
Journal Article -
7
Characterization, Measurement and Specification of Device Imperfections in Optical Coherent Transceivers
Published in Journal of lightwave technology (15-05-2022)“…Transceiver imperfections become the primary source of impairment as baud rate and modulation order grow in advanced optical coherent communications. Thus,…”
Get full text
Journal Article -
8
Transmission Electron Microscopy and Photoluminescence Characterization of InAs Quantum Wires on Vicinal GaAs(110) Substrates by Molecular Beam Epitaxy
Published in Japanese Journal of Applied Physics (01-08-1999)“…InAs quantum wires have been naturally formed on vicinal GaAs(110) surfaces with giant steps by molecular beam epitaxy. Transmission electron microscope…”
Get full text
Journal Article -
9
Annealing effect on InAs islands on GaAs(0 0 1) substrates studied by scanning tunneling microscopy
Published in Applied surface science (08-05-2002)“…Post-annealing effects on InAs islands grown on GaAs(0 0 1) surfaces have been investigated by scanning tunneling microscopy (STM) connected to molecular beam…”
Get full text
Journal Article Conference Proceeding -
10
Fast optical channel recovery in field demonstration of 100-Gbit/s Ethernet over OTN using real-time DSP
Published in Optics express (04-07-2011)“…A field trial of 100-Gbit/s Ethernet over an optical transport network (OTN) is conducted using a real-time digital coherent signal processor. Error free…”
Get full text
Journal Article -
11
Electronic structures of porous Si studied by core-level absorption and photoemission spectroscopy
Published in Japanese Journal of Applied Physics (01-03-1993)“…For the investigation of the electronic structures of porous Si, 2p core-level absorption and photoemission spectra are measured with synchrotron radiation…”
Get full text
Journal Article -
12
Formation and characterization of GaAs quantum wires at giant step edges on vicinal (110) GaAs surfaces
Published in Japanese Journal of Applied Physics (1995)“…We report the formation of GaAs quantum wires using giant step structure formed during molecular beam epitaxial growth of AlGaAs on vicinal (110) GaAs…”
Get full text
Conference Proceeding Journal Article -
13
Precise Formation of Fine Pits on Birefringent Film for Multilevel Optical Data Storage
Published in Japanese Journal of Applied Physics (2002)Get full text
Journal Article -
14
Stacked GaAs multi-quantum wires grown on vicinal GaAs(110) surfaces by molecular beam epitaxy
Published in Applied physics letters (26-01-1998)“…Stacked GaAs quantum wires (QWRs) are grown on the surfaces with giant steps which are naturally formed on vicinal GaAs(110) substrates by molecular beam…”
Get full text
Journal Article -
15
Charge-balanced heteroepitaxial growth of GaAs on Si
Published in Japanese Journal of Applied Physics (1993)“…We propose charge-balanced heteroepitaxy, where the GaAs/Si interface is neutralized by inserting one monolayer of column II elements in place of the Ga atoms…”
Get full text
Conference Proceeding Journal Article -
16
Formation of InAs wires and dots on vicinal GaAs (110) surfaces with giant steps by molecular beam epitaxy
Published in Japanese Journal of Applied Physics (15-12-1997)“…InAs are grown on vicinal GaAs (110) surfaces with giant steps using molecular beam epitaxy. Atomic force microscopy, X-ray photoelectron spectroscopy and…”
Get full text
Journal Article -
17
Scanning tunneling microscopy study of the hydrogen-terminated n- and p-type Si(001) surfaces
Published in Applied surface science (01-06-1998)“…We have investigated hydrogen-passivated Si(001) surfaces with various doping conditions using X-ray photoelectron spectroscopy (XPS), scanning tunneling…”
Get full text
Journal Article -
18
Growth Temperature Dependence of InAs Islands Grown on GaAs (001) Substrates
Published in Japanese Journal of Applied Physics (2002)“…STM in conjunction with MBE has been used to investigate InAs islands and wetting layers on GaAs(001) substrates. STM results reveal that the size, density and…”
Get full text
Journal Article -
19
Nonlinear noise spectrum measurement using a probability-maintained noise power ratio method
Published in Communications engineering (29-12-2022)“…Nonlinear distortion (noise) limits many communication systems, demanding a means of estimating system performance via device nonlinear characteristics. The…”
Get full text
Journal Article -
20
Micro-photoluminescence spectroscopy of single (Al, Ga)As quantum wires grown on vicinal GaAs ( [formula omitted]) surfaces
Published in Physica. E, Low-dimensional systems & nanostructures (01-10-2001)“…Single AlGaAs and GaAs quantum wires (QWRs) have been investigated by micro-photoluminescence (micro-PL). The micro-PL spectra of the GaAs QWR reveal that the…”
Get full text
Journal Article