Search Results - "Nakakohara, Yusuke"
-
1
Three-Phase LLC Series Resonant DC/DC Converter Using SiC MOSFETs to Realize High-Voltage and High-Frequency Operation
Published in IEEE transactions on industrial electronics (1982) (01-04-2016)“…SiC MOSFETs are applied to constitute a three-phase, 5-kW LLC series resonant dc/dc converter with isolation transformers. A switching frequency of around 200…”
Get full text
Journal Article -
2
Electrothermal Cosimulation for Predicting the Power Loss and Temperature of SiC MOSFET Dies Assembled in a Power Module
Published in IEEE transactions on power electronics (01-03-2020)“…The electrothermal cosimulation proposed in this paper accurately reproduces the power loss and the temperature of the silicon carbide (SiC)…”
Get full text
Journal Article -
3
Magnetic Near-Field Strength Prediction of a Power Module by Measurement-Independent Modeling of Its Structure
Published in IEEE access (2020)“…This paper presents a simulation scheme based on the S-parameters for simultaneously predicting the circuit operation of a power module (PM) and its consequent…”
Get full text
Journal Article -
4
Single crystallization of Ba8AlxSi46−x clathrate for improvement of thermoelectric properties
Published in Journal of materials research (14-08-2011)“…We have synthesized single- and polycrystal Ba8AlxSi46−x clathrates to compare their thermoelectric properties. Single-crystal sample was prepared by…”
Get full text
Journal Article -
5
A Fanless Operating Trans-Linked Interleaved 5 kW Inverter Using SiC MOSFETs to Achieve 99% Power Conversion Efficiency
Published in IEEE transactions on industrial electronics (1982) (01-12-2018)“…A trans-linked interleaved inverter using silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) achieves a power conversion…”
Get full text
Journal Article -
6
Single crystallization of Ba 8 Al x Si 46− x clathrate for improvement of thermoelectric properties
Published in Journal of materials research (14-08-2011)“…We have synthesized single- and polycrystal Ba 8 Al x Si 46− x clathrates to compare their thermoelectric properties. Single-crystal sample was prepared by…”
Get full text
Journal Article -
7
A 13.56 MHz wireless power transmission systems with enhancement-mode GaN high electron mobility transistors
Published in 2013 IEEE International Meeting for Future of Electron Devices, Kansai (01-06-2013)“…Enhancement-mode GaN-HEMT devices with a newly developed recessed-gate structure were fabricated. These devices were capable of operating at up to 30 MHz…”
Get full text
Conference Proceeding