Search Results - "Nakai, Junkichi"
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Photoacoustic Spectroscopy Theory for Multi-Layered Samples and Interference Effect
Published in Japanese Journal of Applied Physics (01-01-1981)“…The Rosencwaig-Gersho theory of photoacoustic spectroscopy has been expanded into the two-layer model and the photoacoustic signal in the multi-layer model has…”
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2
Ellipsometry and reflectance of etched (100) surfaces of undoped, semi-insulating LEC GaAs
Published in Japanese Journal of Applied Physics (01-01-1984)“…It is demonstrated that ellipsometry combined with reflectance measurement provides useful information on the distribution of each pits due to crystal defects…”
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3
Electroabsorption of GaS around the Indirect Edge
Published in Journal of the Physical Society of Japan (01-01-1975)“…The electroabsorption spectra in the indirect transition region are measured on layer compound GaS with experimental condition of incident light normal to the…”
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4
Effect of CW-Laser Irradiation on Interface Properties of Anodized GaAs-MOS
Published in Japanese Journal of Applied Physics (01-01-1980)Get full text
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5
Photoacoustic Spectroscopy Theory for Multi-Layered Samples and Interference Effect
Published in Japanese Journal of Applied Physics (01-05-1981)Get full text
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6
Electroreflectance Study of CdxHg1-xTe
Published in Journal of the Physical Society of Japan (01-01-1973)“…The electroreflectance of CdxHg1-xTe alloys for x from 0 to 0.70 and for x=0.97 and x=1 was measured by the electrolyte technique in the range of photon energy…”
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7
Electroreflectance of GaSe. I. Around 3.4 eV
Published in Journal of the Physical Society of Japan (1975)“…Electroreflectance of layer compound [straight epsilon]-GaSe is measured around 3.4 eV at 77 K and around 3.2 eV at 300 K with the Schottky-barrier technique…”
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8
Electroreflectance of GaSe. II. 3.5-4.1 eV Region
Published in Journal of the Physical Society of Japan (1975)“…Electroreflectance spectra of [straight epsilon]-GaSe in the photon energy region 3.5-4.1 eV have been investigated at 77 K and at 300 K for F//c with the…”
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9
Reflectance and Wavelength-Modulated Reflectance Measurements by a Double Beam-Single Detector System
Published in Japanese Journal of Applied Physics (01-01-1976)Get full text
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10
Surface Potential and Surface State Density in Anodized GaAs MOS Capacitors
Published in Japanese Journal of Applied Physics (01-01-1976)Get full text
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11
A Measurement of Doping Inhomogeneity by Low-Field Electroreflectance
Published in Japanese Journal of Applied Physics (01-01-1976)Get full text
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12
Magnetophonon Resonance of Hot Electrons in n -InSb at 77 K
Published in Journal of the Physical Society of Japan (1973)“…Magnetophonon resonances, which were first predicted by Gurevich and Firsov, have been observed in the hot electron mobility in pure n-InSb. The resonance…”
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13
Spectral Sensitivity of Photovoltaic Effect of Ge Film Obliquely Deposited in Vacuum
Published in Japanese Journal of Applied Physics (1964)Get full text
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14
Electroabsorption and Electroluminescence of GaSe
Published in Japanese Journal of Applied Physics (01-01-1975)Get full text
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15
Characteristics of the Contact between Vacuum-deposited CdSe Films and Au Films
Published in Japanese Journal of Applied Physics (1964)Get full text
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16
Electroreflectance for the \(\varLambda_{3}\)–\(\varLambda_{1}\) Transitions in HgSe
Published in Journal of the Physical Society of Japan (01-04-1972)Get full text
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17
Space-Charge-Limited-Current in Vacuum-Deposited ZnTe Films
Published in Japanese Journal of Applied Physics (01-01-1970)Get full text
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18
Electrical Conduction and Switching in Amorphous Semiconductors
Published in Japanese Journal of Applied Physics (01-01-1970)“…Electrical conductivity, thermally stimulated current, plaotoconductivity and switching effect have been investigated in amorphous semiconductors of As-Te,…”
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19
Brillouin-Scattering Study on Mixing Effects of Acoustic Waves in Photoconductive CdS
Published in Journal of the Physical Society of Japan (01-01-1974)“…Frequency spectrum and spatial distribution of the acoustic flux amplified through acoustoelectric effect in photoconductive CdS were measured by means of…”
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20
Some Optical Properties of Layer-Type Semiconductor GaTe
Published in Journal of the Physical Society of Japan (01-01-1970)“…Some optical properties of GaTe single crystals, such as absorption coefficient, photoconductivity and reflectivity, have been measured. The crystal is usually…”
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