Search Results - "Nakabayashi, Masashi"

Propagation behavior of threading dislocations during physical vapor transport growth of silicon carbide (SiC) single crystals by Ohtani, Noboru, Katsuno, Masakazu, Tsuge, Hiroshi, Fujimoto, Tatsuo, Nakabayashi, Masashi, Yashiro, Hirokatsu, Sawamura, Mitsuru, Aigo, Takashi, Hoshino, Taizo

“…The dislocation formation and propagation processes in physical vapor transport (PVT) grown 4H silicon carbide (4H–SiC) single crystals have been investigated…”
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Dislocation processes during SiC bulk crystal growth by Ohtani, Noboru, Katsuno, Masakazu, Tsuge, Hiroshi, Fujimoto, Tatsuo, Nakabayashi, Masashi, Yashiro, Hirokatsu, Sawamura, Mitsuru, Aigo, Takashi, Hoshino, Taizo

“…Dislocation processes during physical vapor transport (PVT) growth of silicon carbide (SiC) single crystals were investigated by defect selective etching. It…”
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Investigation of heavily nitrogen-doped n + 4H–SiC crystals grown by physical vapor transport by Ohtani, Noboru, Katsuno, Masakazu, Nakabayashi, Masashi, Fujimoto, Tatsuo, Tsuge, Hiroshi, Yashiro, Hirokatsu, Aigo, Takashi, Hirano, Hosei, Hoshino, Taizo, Tatsumi, Kohei

“…Heavily nitrogen-doped n + 4H–SiC single crystals were grown by the physical vapor transport (PVT) method. The nitrogen incorporation kinetics in a heavily…”
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Analysis of Basal Plane Bending and Basal Plane Dislocations in 4H-SiC Single Crystals by Ohtani, Noboru, Katsuno, Masakazu, Fujimoto, Tatsuo, Nakabayashi, Masashi, Tsuge, Hiroshi, Yashiro, Hirokatsu, Aigo, Takashi, Hirano, Hosei, Hoshino, Taizo, Ohashi, Wataru

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Behavior of Basal Plane Dislocations in Hexagonal Silicon Carbide Single Crystals Grown by Physical Vapor Transport by Ohtani, Noboru, Katsuno, Masakazu, Tsuge, Hiroshi, Fujimoto, Tatsuo, Nakabayashi, Masashi, Yashiro, Hirokatsu, Sawamura, Mitsuru, Aigo, Takashi, Hoshino, Taizo

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