Search Results - "Nakabayashi, Masaaki"

A ferroelectric capacitor with an asymmetric double-layered ferroelectric structure comprising a liquid-delivery MOCVD Pb(Zr, Ti)O3 layer and a sputter-deposited La-doped Pb(Zr, Ti)O3 for highly reliable FeRAM by Wang, Wensheng, Nakamura, Ko, Nakabayashi, Masaaki, Eshita, Takashi, Takai, Kazuaki, Suezawa, Kenkichi, Oikawa, Mitsuaki, Sato, Nozomi, Ozawa, Soichiro, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi, Nagai, Kouichi

“…We have developed a double-layered ferroelectric capacitor comprising a liquid-delivery metal–organic chemical vapor deposition-based Pb(Zr, Ti)O3 (PZT) lower…”
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1-Adamantyl-tert-butyltetrathiolane 2,3-Dioxide:  First Isolable vic-Disulfoxide and Efficient Precursor of S2O by ISHII, Akihiko, NAKABAYASHI, Masaaki, NAKAYAMA, Juzo

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Oxidation of tetrathiolanes: isolation of a vic-disulfoxide, 5-(1-adamantyl)-5-tert-butyltetrathiolane 2,3-dioxide and its decomposition to the dithiirane 1-oxide and ‘S2O’ by Ishii, Akihiko, Nakabayashi, Masaaki, Jin, Yi-Nan, Nakayama, Juzo

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Development of a Pb(Zr,Ti)O3 capacitor employing an IrO x /Ir bottom electrode for highly reliable ferroelectric random access memories by Sato, Nozomi, Wang, Wensheng, Eshita, Takashi, Oikawa, Mitsuaki, Nakabayashi, Masaaki, Takai, Kazuaki, Nakamura, Ko, Nagai, Kouichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi

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Development of a Pb(Zr,Ti)O 3 capacitor employing an IrO x /Ir bottom electrode for highly reliable ferroelectric random access memories by Sato, Nozomi, Wang, Wensheng, Eshita, Takashi, Oikawa, Mitsuaki, Nakabayashi, Masaaki, Takai, Kazuaki, Nakamura, Ko, Nagai, Kouichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi

“…A highly {111}-oriented metal-organic CVD Pb(Zr,Ti)O 3 (PZT) is successfully developed using IrO x /Ir instead of Ir as the bottom electrode. The {111} PZT…”
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Development of a Pb(Zr,Ti)O3 capacitor employing an IrOx/Ir bottom electrode for highly reliable ferroelectric random access memories by Sato, Nozomi, Wang, Wensheng, Eshita, Takashi, Oikawa, Mitsuaki, Nakabayashi, Masaaki, Takai, Kazuaki, Nakamura, Ko, Nagai, Kouichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi

“…A highly {111}-oriented metal-organic CVD Pb(Zr,Ti)O3 (PZT) is successfully developed using IrOx/Ir instead of Ir as the bottom electrode. The {111} PZT…”
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Enhanced Thermal Stability in Perpendicular Top-Pinned Magnetic Tunnel Junction With Synthetic Antiferromagnetic Free Layers by Yoshida, Chikako, Aoki, Masaki, Sugii, Toshihiro, Takenaga, Takashi, Iba, Yoshihisa, Yamazaki, Yuichi, Noshiro, Hideki, Tsunoda, Koji, Hatada, Akiyoshi, Nakabayashi, Masaaki, Takahashi, Atsushi

“…Synthetic antiferromagnetic (SAF) free layers consisting of [Co (0.3 nm)/Pd (0.7 nm)] n /Ru/Ta/CoFeB were investigated for use in the free layers of top-pinned…”
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Reduction of Offset Field in Top-Pinned MTJ With Synthetic Antiferromagnetic Free Layer by Yoshida, Chikako, Takenaga, Takashi, Yamazaki, Yuichi, Uehara, Haruka, Noshiro, Hideyuki, Tsunoda, Koji, Iba, Yoshihisa, Hatada, Akiyoshi, Nakabayashi, Masaaki, Takahashi, Atsushi, Aoki, Masaki, Sugii, Toshihiro

“…We found that the offset field (H off ) of a top-pinned magnetic tunnel junction (MTJ) with a CoPd/Ru/Ta/CoFeB-synthetic antiferromagnetic (SAF) free layer can…”
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Photo chemical vapor deposition of metal oxide films relating to Bi-Sr-Ca-Cu-O superconductor by KOINUMA, H, CHAUDHARY, K. A, NAKABAYASHI, M, SHIRAISHI, T, HASHIMOTO, T, KITAZAWA, K, SUEMUNE, Y, YAMAMOTO, T

“…Oxide films relating to high- T c superconducting Bi-Sr-Ca-Cu-O system were prepared by an oxidative photochemical vapor deposition using a low pressure…”
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1-Adamantyl- tert -butyltetrathiolane 2,3-Dioxide:  First Isolable v ic -Disulfoxide and Efficient Precursor of S 2 O by Ishii, Akihiko, Nakabayashi, Masaaki, Nakayama, Juzo

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Oxidation of tetrathiolanes: isolation of a vic-disulfoxide, 5-(1-adamantyl)-5- tert-butyltetrathiolane 2,3-dioxide and its decomposition to the dithiirane 1-oxide and ‘S 2O’ by Ishii, Akihiko, Nakabayashi, Masaaki, Jin, Yi-Nan, Nakayama, Juzo

“…Oxidation of 5-(1-adamantyl)-5- tert-butyltetrathiolane ( 3a) with dimethyldioxirane (DMD) at −78 or −20°C gave (1 R*,3 S*)- and (1 R*,3 R*)-3-(1-adamantyl)-3-…”
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1-Adamantyl-tert-butyltetrathiolane 2,3-Dioxide:  First Isolable v ic-Disulfoxide and Efficient Precursor of S2O by Ishii, Akihiko, Nakabayashi, Masaaki, Nakayama, Juzo

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Chemical stability of CVD source materials for high- T c superconducting films by Hashimoto, Takuya, Koinuma, Hideomi, Nakabayashi, Masaaki, Shiraishi, Tadashi, Suemune, Youichi, Yamamoto, Takakazu

“…The stability of chemical vapor deposition (CVD) source materials for high- T c superconducting films was examined by 1 H-NMR (nuclear magnetic resonance), 13…”
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Stress stabilization of β‐tantalum and its crystal structure by Kondo, Kazuaki, Nakabayashi, Masaaki, Kawakami, Ken’ichi, Chijimatsu, Tatsuo, Nakaishi, Masafumi, Yamada, Masao, Yamabe, Masaki, Sugishima, Kenji

“…We studied the relationship between Ta crystal structures and the stress stability of Ta under heating. The stress in Ta which was sputter deposited on SiC was…”
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Chemical stability of CVD source materials for high-Tc superconducting films by Hashimoto, Takuya, Koinuma, Hideomi, Nakabayashi, Masaaki, Shiraishi, Tadashi, Suemune, Youichi, Yamamoto, Takakazu

“…The stability of chemical vapor deposition (CVD) source materials for high-Tc superconducting films was examined by 1H-NMR (nuclear magnetic resonance),…”
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Fluorine Doping and Superconductivity of Nd 2 CuO 4 Thin Films by Koinuma, Hideomi, Takeuchi, Kou, Yoshimoto, Mamoru, Hashida, Kenji, Nakabayashi, Masaaki, Gonda, Satoshi, Hirayama, Tohru, Shiraishi, Tadashi

“…Fluorine was doped into sputter-deposited Nd 2 CuO 4 films to induce superconductivity in the films. The films annealed in the presence of NF 3 gas were…”
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Ti-capping technique as a breakthrough for achieving low threshold voltage, high mobility, and high reliability of pMOSFET with metal gate and high-k dielectrics technologies by Takahashi, H., Minakata, H., Morisaki, Y., Shiqin Xiao, Nakabayashi, M., Nishigaya, K., Sakoda, T., Ikeda, K., Morioka, H., Tamura, N., Kase, M., Nara, Y.

“…We have proposed inhibition mechanism of common Al-capping technique for pMOSFET threshold-voltage (V th ) control for the first time, and have established…”
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Fluorine doping and superconductivity of Nd2CuO4 thin films by KOINUMA, H, TAKEUCHI, K, YOSHIMOTO, M, HASHIDA, K, NAKABAYASHI, M, GONDA, S, HIRAYAMA, T, SHIRAISHI, T

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