Search Results - "Nahory, R E"

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  1. 1

    Room-temperature blue lasing action in (Zn,Cd)Se/ZnSe optically pumped multiple quantum well structures on lattice-matched (Ga,In)As substrates by JEON, H, DING, J, NURMIKKO, A. V, LUO, H, SAMARTH, N, FURDYNA, J. K, BONNER, W. A, NAHORY, R. E

    Published in Applied physics letters (03-12-1990)
    “…We report on studies of optically pumped laser action in (Zn,Cd)Se/ZnSe multiple quantum well structures prepared by molecular beam epitaxy on lattice-matched…”
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    Journal Article
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    Indirect-direct anticrossing in GaAs-AlAs superlattices induced by an electric field: Evidence of Gamma -X mixing by Meynadier, M, Nahory, RE, Worlock, JM, Tamargo, MC, de Miguel JL, Sturge, MD

    Published in Physical review letters (28-03-1988)
    “…It is demonstrated that a GaAs-AlAs superlattice can be switched from indirect to direct, in both real and reciprocal spaces, by application of a modest axial…”
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    Journal Article
  4. 4

    Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures by Tabatabaie, N., Meynadier, M.-H., Nahory, R. E., Harbison, J. P., Florez, L. T.

    Published in Applied physics letters (21-08-1989)
    “…We describe a large lateral photovoltage that develops in AlGaAs/GaAs modulation-doped structures in response to excitation by spot illumination. The effect is…”
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    Journal Article
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    Optical transitions and chemistry at the In0.52Al0.48As/InP interface by BRASIL, M. J. S. P, NAHORY, R. E, QUINN, W. E, TAMARGO, M. C, FARRELL, H. H

    Published in Applied physics letters (20-04-1992)
    “…We report properties of the InAlAs/InP interface and its formation during growth by organometallic molecular beam epitaxy. Taking advantage of the…”
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    Journal Article
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    Optical investigation of atomic steps in ultrathin InGaAs/InP quantum wells grown by vapor levitation epitaxy by MORAIS, P. C, COX, H. M, BASTOS, P. L, HWANG, D. M, WORLOCK, J. M, YABLONOVITCH, E, NAHORY, R. E

    Published in Applied physics letters (30-01-1989)
    “…Ultrathin InGaAs/InP single quantum well structures, grown by chloride transport vapor levitation epitaxy, have been investigated by low-temperature…”
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    Journal Article
  8. 8

    Roughness at the interface of thin InP/InAs quantum wells by BRASIL, M. J. S. P, NAHORY, R. E, TAMARGO, M. C, SCHWARZ, S. A

    Published in Applied physics letters (08-11-1993)
    “…We investigated the interface roughness of InP/As quantum wells using photoluminescence and secondary ion mass spectroscopy. Typical photoluminescence spectra…”
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    Journal Article
  9. 9

    Luminescence investigations of highly strained-layer InAs-GaAs superlattices by VOISIN, P, VOOS, M, MARZIN, J. Y, TAMARGO, M. C, NAHORY, R. E, CHO, A. Y

    Published in Applied physics letters (26-05-1986)
    “…We describe photoluminescence investigations in InAs-GaAs superlattices in the thin layer limit (10–20 Å). The data, which are compared to theoretical results…”
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    Journal Article
  10. 10

    Double zinc diffusion fronts in InP: theory and experiment by YAMADA, M, TIEN, P. K, MARTIN, R. J, NAHORY, R. E, BALLMAN, A. A

    Published in Applied physics letters (15-09-1983)
    “…Diffusion of Zn or Cd in n-type III-V material has been extensively used for forming p-n junctions in lasers and detectors. However, if the substrate material…”
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    Journal Article
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    High speed, ion bombarded InGaAs photoconductors by DOWNEY, P. M, MARTIN, R. J, NAHORY, R. E, LORIMOR, O. G

    Published in Applied physics letters (15-02-1985)
    “…Studies of the performance of n-InGaAs photoconductive detectors before and after the introduction of recombination sites via ion bombardment are described. An…”
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    Journal Article
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    Arsenic-doped P-type ZnTe grown by molecular beam epitaxy by TURCO-SANDROFF, F. S, BRASIL, M. J. S, NAHROY, R. E, MARTIN, R. J, ZHANG, Y, SKROMME, B. J

    Published in Applied physics letters (05-08-1991)
    “…Efficient p doping of ZnTe by arsenic has been achieved using a Zn3As2 effusion cell. Doping levels of ZnTe/GaAs can be controlled from 1016 to 1018 cm−3. The…”
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    Journal Article
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    Optical investigations of the band structure of strained InAs/AlInAs quantum wells by MEYNADIER, M.-H, DE MIGUEL, J.-L, TAMARGO, M. C, NAHORY, R. E

    Published in Applied physics letters (1988)
    “…We report photoluminescence and photoconductivity measurements on single InAs quantum wells under a 3.4% biaxial compression. The photoluminescence line, which…”
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    Journal Article
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    Growth of InGaAs/InAlAs quantum wells on InP patterned substrates by molecular beam epitaxy by TURCO, F. S, TAMARGO, M. C, HWANG, D. M, NAHORY, R. E, WERNER, J, KASH, K, KAPON, E

    Published in Applied physics letters (1990)
    “…We have grown InGaAs/InAlAs quantum wells and InGaAs, InAlAs single layers over InP nonplanar substrates. Photoluminescence, transmission electron microscopy,…”
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    Journal Article
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    Fabrication and characterization of ZnSe/GaAs heterostructure bipolar transistors grown by molecular beam epitaxy by GLAESSER, A. S, MERZ, J. L, NAHORY, R. E, TAMARGO, M. C

    Published in Applied physics letters (16-03-1992)
    “…Fabrication of the first molecular beam epitaxy grown ZnSe/GaAs heterostructure bipolar transistor (HBT) is described. The ZnSe/GaAs heterointerface is…”
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    Journal Article
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    Closed‐loop control of growth of semiconductor materials and structures by spectroellipsometry by Aspnes, D. E., Quinn, W. E., Tamargo, M. C., Gregory, S., Schwarz, S. A., Pudensi, M. A. A., Brasil, M. J. S. P., Nahory, R. E.

    “…Using closed‐loop ellipsometric feedback control, we have grown a variety of epitaxial Al x Ga1−x As structures by chemical beam epitaxy where compositions x…”
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    Conference Proceeding Journal Article
  18. 18

    Hot-carrier relaxation in photoexcited In0.53Ga0.47As by Shah, Jagdeep, Leheny, R. F., Nahory, R. E., Pollack, M. A.

    Published in Applied physics letters (01-09-1980)
    “…Photoluminescence spectra of In0.53Ga0.47As reveal the presence of hot carriers with effective temperatures as high as Tc ∼600 K. Variation of carrier…”
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    Journal Article
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    Reduction of defects and inhomogeneous strain in heteroepitaxial ZnSe by SKROMME, B. J, TAMARGO, M. C, DE MIGUEL, J. L, NAHORY, R. E

    Published in Applied physics letters (28-11-1988)
    “…We present low-temperature ZnSe photoluminescence spectra having very narrow bound exciton linewidths (0.55 meV), which demonstrate for the first time that…”
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    Journal Article
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    Dynamics of photoexcited carriers in micron-size InP-InGaAsP etched microstructures probed by picosecond photoluminescence spectroscopy by KASH, K, GRABBE, P, NAHORY, R. E, SCHERER, A, WEAVER, A, CANEAU, C

    Published in Applied physics letters (28-11-1988)
    “…We report the first use of picosecond photoluminescence spectroscopy to probe carrier relaxation in etched semiconductor microstructures. 2-μm-diam posts…”
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    Journal Article