Search Results - "Nahory, R E"
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Room-temperature blue lasing action in (Zn,Cd)Se/ZnSe optically pumped multiple quantum well structures on lattice-matched (Ga,In)As substrates
Published in Applied physics letters (03-12-1990)“…We report on studies of optically pumped laser action in (Zn,Cd)Se/ZnSe multiple quantum well structures prepared by molecular beam epitaxy on lattice-matched…”
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Indirect-direct anticrossing in GaAs-AlAs superlattices induced by an electric field: Evidence of Gamma -X mixing
Published in Physical review letters (28-03-1988)“…It is demonstrated that a GaAs-AlAs superlattice can be switched from indirect to direct, in both real and reciprocal spaces, by application of a modest axial…”
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Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures
Published in Applied physics letters (21-08-1989)“…We describe a large lateral photovoltage that develops in AlGaAs/GaAs modulation-doped structures in response to excitation by spot illumination. The effect is…”
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Molecular beam epitaxy of ZnSe1-xTex ternary alloys
Published in Applied physics letters (15-04-1991)Get full text
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Optical transitions and chemistry at the In0.52Al0.48As/InP interface
Published in Applied physics letters (20-04-1992)“…We report properties of the InAlAs/InP interface and its formation during growth by organometallic molecular beam epitaxy. Taking advantage of the…”
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Optical investigation of atomic steps in ultrathin InGaAs/InP quantum wells grown by vapor levitation epitaxy
Published in Applied physics letters (30-01-1989)“…Ultrathin InGaAs/InP single quantum well structures, grown by chloride transport vapor levitation epitaxy, have been investigated by low-temperature…”
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Roughness at the interface of thin InP/InAs quantum wells
Published in Applied physics letters (08-11-1993)“…We investigated the interface roughness of InP/As quantum wells using photoluminescence and secondary ion mass spectroscopy. Typical photoluminescence spectra…”
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Luminescence investigations of highly strained-layer InAs-GaAs superlattices
Published in Applied physics letters (26-05-1986)“…We describe photoluminescence investigations in InAs-GaAs superlattices in the thin layer limit (10–20 Å). The data, which are compared to theoretical results…”
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Double zinc diffusion fronts in InP: theory and experiment
Published in Applied physics letters (15-09-1983)“…Diffusion of Zn or Cd in n-type III-V material has been extensively used for forming p-n junctions in lasers and detectors. However, if the substrate material…”
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High speed, ion bombarded InGaAs photoconductors
Published in Applied physics letters (15-02-1985)“…Studies of the performance of n-InGaAs photoconductive detectors before and after the introduction of recombination sites via ion bombardment are described. An…”
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Zn1-yCdySe1-xTex quaternary wide band-gap alloys : molecular beam epitaxial growth and optical properties
Published in Applied physics letters (02-09-1991)Get full text
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Arsenic-doped P-type ZnTe grown by molecular beam epitaxy
Published in Applied physics letters (05-08-1991)“…Efficient p doping of ZnTe by arsenic has been achieved using a Zn3As2 effusion cell. Doping levels of ZnTe/GaAs can be controlled from 1016 to 1018 cm−3. The…”
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Optical investigations of the band structure of strained InAs/AlInAs quantum wells
Published in Applied physics letters (1988)“…We report photoluminescence and photoconductivity measurements on single InAs quantum wells under a 3.4% biaxial compression. The photoluminescence line, which…”
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Growth of InGaAs/InAlAs quantum wells on InP patterned substrates by molecular beam epitaxy
Published in Applied physics letters (1990)“…We have grown InGaAs/InAlAs quantum wells and InGaAs, InAlAs single layers over InP nonplanar substrates. Photoluminescence, transmission electron microscopy,…”
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Fabrication and characterization of ZnSe/GaAs heterostructure bipolar transistors grown by molecular beam epitaxy
Published in Applied physics letters (16-03-1992)“…Fabrication of the first molecular beam epitaxy grown ZnSe/GaAs heterostructure bipolar transistor (HBT) is described. The ZnSe/GaAs heterointerface is…”
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Closed‐loop control of growth of semiconductor materials and structures by spectroellipsometry
Published in Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films (01-07-1992)“…Using closed‐loop ellipsometric feedback control, we have grown a variety of epitaxial Al x Ga1−x As structures by chemical beam epitaxy where compositions x…”
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Conference Proceeding Journal Article -
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Hot-carrier relaxation in photoexcited In0.53Ga0.47As
Published in Applied physics letters (01-09-1980)“…Photoluminescence spectra of In0.53Ga0.47As reveal the presence of hot carriers with effective temperatures as high as Tc ∼600 K. Variation of carrier…”
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Reduction of defects and inhomogeneous strain in heteroepitaxial ZnSe
Published in Applied physics letters (28-11-1988)“…We present low-temperature ZnSe photoluminescence spectra having very narrow bound exciton linewidths (0.55 meV), which demonstrate for the first time that…”
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Dynamics of photoexcited carriers in micron-size InP-InGaAsP etched microstructures probed by picosecond photoluminescence spectroscopy
Published in Applied physics letters (28-11-1988)“…We report the first use of picosecond photoluminescence spectroscopy to probe carrier relaxation in etched semiconductor microstructures. 2-μm-diam posts…”
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