Search Results - "Nagira, Takashi"

Stable growth of ruthenium doped InP at the current blocking layer for buried-heterostructure lasers by Yamaguchi, Harunaka, Nagira, Takashi, Kawazu, Zempei, Sakaino, Go, Nishida, Takehiro, Takemi, Masayoshi

“…We report on the stable growth of ruthenium doped InP (Ru-InP) and its application in optical communication devices, grown by metal-organic vapor phase…”
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Tunable DFB Laser Array Integrated With Mach-Zehnder Modulators for 44.6 Gb/s DQPSK Transmitter by Sasahata, Y., Saito, T., Takiguchi, T., Takagi, K., Matsumoto, K., Nagira, T., Sakuma, H., Suzuki, D., Makita, R., Takabayashi, M., Gotoda, M., Ishimura, E.

“…A tunable distributed feedback (DFB) laser array integrated with Mach-Zehnder modulators (TLA-MZMs) for a 44.6 Gb/s differential quadrature phase shift keying…”
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Dependence of the diffusion of zinc from zinc-into ruthenium-doped indium phosphide on zinc concentration by Yamaguchi, Harunaka, Nagira, Takashi, Kawazu, Zempei, Ono, Kenichi, Takemi, Masayoshi

“…We investigated the Zn concentration dependence of Zn diffusion from Zn-doped InP (Zn-InP) to Ru-doped InP (Ru-InP). As semi-insulated InP, Ru-InP shows…”
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Investigation of the origin of InAs dot formation at the growth interrupted AlGaInAs hetero-interface grown by MOVPE by Nagira, Takashi, Ono, Kenichi, Takemi, Masayoshi

“…In the growth of AlGaInAs/InP material system by metal organic vapor phase epitaxy (MOVPE), there are many hillocks on the wafer in some growth conditions. We…”
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25.8Gbps direct modulation of BH AlGaInAs DFB lasers with p-InP substrate for low driving current by Sakaino, Go, Takiguchi, Toru, Sakuma, Hitoshi, Watatani, Chikara, Nagira, Takashi, Suzuki, Daisuke, Aoyagi, Toshitaka, Ishikawa, Takahide

“…1.3μm-band BH AlGaInAs DFB lasers with p-InP substrate are fabricated for 100GbE (25Gbps × 4 wavelengths). Very high mask margin of over 30% is achieved at…”
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