Search Results - "Naghiyev, T G"

Computer modeling for the study of (n, p) and (n, α) modifications in AlN nanoparticles by Naghiyev, T. G.

“…The present study is devoted to an investigation of the (n, p) and the (n, α) modifications created by neutrons in AlN nanoparticles at different energies…”
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Effect of Gamma Irradiation on the Thermal Switching of a GeS:Nd Single Crystal by Alekperov, A. S., Dashdemirov, A. O., Naghiyev, T. G., Jabarov, S. H.

“…The effect of the thermal switching of a layered GeS:Nd single crystal is investigated in a wide range of temperatures ( T = 80–350 K). The effect of γ…”
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Study on luminescent properties of Tb3+ and Sm3+ co-doped CaSiO3 phosphors for white light emitting diodes by Khan, D T, Dang, N T, Jabarov, S H, Naghiyev, T G, Rzayev, R M, Nguyen, T Q, Tuyen, H V, Thanh, N T, Son, L V T

“…A series of CaSiO3:x%Tb3+, y%Sm3+ compounds was synthesized by the conventional solid state reaction. X-ray diffraction, scanning electron microscopy, and…”
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Temperature dependence of photoconductivity in layered semiconductor p-GaSe by Naghiyev, T. G., Babayeva, R. F., Aliyev, Y. I.

“…The temperature dependence of photoconductivity in p-GaSe crystals with different initial (having at 77 K) dark resistivities ( ρ 77  = 2·10 3  ÷ 7·10 6 Ω·cm)…”
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Peculiarities of TP-e.m.f. caused by the heating of charge carriers by an electric field in a layered semiconductor n-InSe by Naghiyev, T. G., Babayeva, R. F., Abiyev, A. S.

“…The effect of the external and intracrystalline factors (temperature, light, and the magnitude of the initial dark resistivity of the sample, electric field,…”
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Ferrimagnetic-Paramagnetic Phase Transition in BaFe11.7In0.3O19 Compound by Agayev, F. G., Jabarov, S. H., Ayyubova, G. Sh, Trukhanov, A. V., Trukhanov, S. V., Mirzayev, M. N., Naghiyev, T. G., Dang, N. T.

“…The morphology, crystal structure, and thermal and magnetic properties of BaFe 11.7 In 0.3 O 19 compound have been investigated. As a result of the structure…”
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Structural and luminescence properties of CaxBa1−xGa2S4:Eu2+ chalcogenide semiconductor solid solutions by Tagiyev, B.G., Tagiyev, O.B., Mammadov, A.I., Quang, Vu Xuan, Naghiyev, T.G., Jabarov, S.H., Leonenya, M.S., Yablonskii, G.P., Dang, N.T.

“…The structural and luminescence properties of chalcogenide semiconductor CaxBa1−xGa2S4 solid solutions (x=0.1–0.9) doped with 7at% of Eu2+ ions were studied at…”
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High photoluminescence stability of CaGa4O7:Eu3+ red phosphor in wide excitation intensity interval by Leanenia, M.S., Lutsenko, E.V., Rzheutski, M.V., Yablonskii, G.P., Naghiyev, T.G., Ganbarova, H.B., Tagiev, O.B.

“…•The emission and excitation spectroscopy of CaGa4O7:Eu3+ compound are analyzed.•Weak thermal quenching is shown in the temperature range of 10–300K.•The…”
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Photoluminescence of CaxBa1−xGa2S4:Eu2+ solid solutions in wide excitation intensity and temperature intervals by Leanenia, M.S., Lutsenko, E.V., Rzheutski, M.V., Pavlovskii, V.N., Yablonskii, G.P., Naghiyev, T.G., Tagiev, B.G., Abushev, S.A., Tagiev, O.B.

“…The detailed investigation of CaxBa1−xGa2S4:Eu2+ solid solutions photoluminescence caused by 5d→4f electronic transitions in Eu2+ ions with x value from 0.1 to…”
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Study on luminescent properties of Tb 3+ and Sm 3+ co-doped CaSiO 3 phosphors for white light emitting diodes by Khan, D T, Dang, N T, Jabarov, S H, Naghiyev, T G, Rzayev, R M, Nguyen, T Q, Tuyen, H V, Thanh, N T, Son, L V T

“…Abstract A series of CaSiO 3 : x %Tb 3+ , y %Sm 3+ compounds was synthesized by the conventional solid state reaction. X-ray diffraction, scanning electron…”
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Structural and luminescence properties of Ca sub(x)Ba sub(1-x)Ga sub(2)S sub(4):Eu super(2+) chalcogenide semiconductor solid solutions by Tagiyev, B G, Tagiyev, O B, Mammadov, A I, Quang, Vu Xuan, Naghiyev, T G, Jabarov, S H, Leonenya, M S, Yablonskii, G P, Dang, N T

“…The structural and luminescence properties of chalcogenide semiconductor Ca sub(x)Ba sub(1-x)Ga sub(2)S sub(4) solid solutions (x = 0.1-0.9) doped with 7 at%…”
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