Search Results - "Nagarajan, Venkatesan"

Multimodal Embodied Conversational Agents: A discussion of architectures, frameworks and modules for commercial applications by Shubham, Kumar, Venkatesan, Laxmi Narayen Nagarajan, Jayagopi, Dinesh Babu, Tumuluri, Raj

“…With the recent advancements in automated communication technology, many traditional businesses that rely on face-to-face communication have shifted to online…”
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Electrical Characterization of GaN-Based HEMTs Under Ultraviolet Illumination by Nagarajan, Venkatesan

“…Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) technology is a remarkable benchmark among semiconductor device technologies, in terms of…”
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Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio by Anandan, Deepak, Nagarajan, Venkatesan, Kakkerla, Ramesh Kumar, Yu, Hung Wei, Ko, Hua Lun, Singh, Sankalp Kumar, Lee, Ching Ting, Chang, Edward Yi

“…•Au-free InAs/InSb and InGaAs/InSb nanowires (NWs) are grown on Si substrate by MOCVD.•Group-V and Group-III effects on InSb NW crystal structure is…”
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Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (1 1 1) substrate by MOCVD by Anandan, Deepak, Kakkerla, Ramesh Kumar, Yu, Hung Wei, Ko, Hua Lun, Nagarajan, Venkatesan, Singh, Sankalp Kumar, Lee, Ching Ting, Chang, Edward Yi

“…•Growth of Au-free axial InAs/InSb HS NW on Si substrate is demonstrated by MOCVD.•Axial InSb HS growth shows a very narrow growth temperature window of…”
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Selective area epitaxy of high quality Wurtzite-InAs heterostructure on InGaAs nanopillars at indium-rich region using MOCVD by Anandan, Deepak, Yu, Hung Wei, Chang, Edward Yi, Singh, Sankalp Kumar, Nagarajan, Venkatesan, Lee, Ching Ting, Dee, Chang Fu, Ueda, Daisuke

“…We report synthesis of Au-free selective area epitaxy of InGaAs/InAs heterostructure nanopillars on patterned Si (111) substrate by metal-organic chemical…”
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Optimization of InAs/GaSb core-shell nanowire structure for improved TFET performance by Singh, Sankalp Kumar, Kakkerla, Ramesh Kumar, Joseph, H. Bijo, Gupta, Ankur, Anandan, Deepak, Nagarajan, Venkatesan, Yu, Hung Wei, Thiruvadigal, D. John, Chang, Edward Yi

“…The performance of InAs/GaSb core-shell nanowire TFET is systematically investigated for the effects of intrinsic device parameters such as channel doping,…”
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Low-Frequency Noise Characterization of AlGaN/GaN HEMTs and MIS-HEMTs Under UV Illumination by Nagarajan, Venkatesan, Chen, Kun-Ming, Lin, Hsin-Yi, Hu, Hsin-Hui, Huang, Guo-Wei, Lin, Chuang-Ju, Chen, Bo-Yuan, Anandan, Deepak, Singh, Sankalp Kumar, Wu, Chai-Hsun, Chang, Edward Yi

“…The low-frequency noise characteristics of AlGaN/GaN HEMTs and MIS-HEMTs are investigated in the dark condition and under UV illumination. The test devices…”
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Selective Area Epitaxy of Axial Wurtzite -InAs Nanowire on InGaAs NW by MOCVD by Anandan, Deepak, Chang, Edward Yi, Wei Yu, Hung, Ko, Hua Lun, Nagarajan, Venkatesan, Singh, Sankalp Kumar

“…Integration of InGaAs/InAs nanowire on silicon (Si) substrate has been attracting huge attention for opto- and micro-electronics applications. In this work we…”
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Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power Applications by Huang, Kuan Ning, Lin, Yueh-Chin, Lin, Jia-Ching, Hsu, Chia Chieh, Lee, Jin Hwa, Wu, Chia-Hsun, Yao, Jing Neng, Hsu, Heng-Tung, Nagarajan, Venkatesan, Kakushima, Kuniyuki, Tsutsui, Kazuo, Iwai, Hiroshi, Chien, Chao Hsin, Chang, Edward Yi

“…An enhancement-mode (E-mode) AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistor (MIS-HEMT) with La 2 O 3 /SiO 2 gate insulator is…”
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Clinical and Neurophysiological Pattern of Guillain-Barré Syndrome in Kuwait by Nagarajan, Venkatesan, Al-Shubaili, Asmahan

“…Objective: To study the clinical and neurophysiological pattern of Guillain-Barré syndrome (GBS) in Kuwait. Materials and Methods: The clinical records of…”
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A simple extraction method for parasitic series resistances in GaN HEMTs considering non-quasi-static effects by Nagarajan, Venkatesan, Chen, Kun-Ming, Wang, Huan-Chung, Singh, Sankalp Kumar, Anandan, Deepak, Lin, Yueh-Chin, Chang, Edward Yi

“…A simple technique for extracting the bias-dependent parasitic series resistances of the GaN-based high electron mobility transistor (HEMT) is demonstrated in…”
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Low back ache treatment with botulinum neurotoxin type A. Local experience in Kuwait by Nagarajan, Venkatesan, Al-Shubaili, Asmahan, Ayad, Yasser M, Alexander, John, Al-Ramezi, Khadijah

“…To investigate the efficacy, safety and tolerability of paraspinal administration of botulinum neurotoxin type A (BoNT-A) in patients with chronic low back…”
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Low Back Ache Treatment with Botulinum Neurotoxin Type A by Nagarajan, Venkatesan, Al-Shubaili, Asmahan, Ayad, Yasser M., Alexander, John, Al-Ramezi, Khadijah

“…Objective: To investigate the efficacy, safety and tolerability of paraspinal administration of botulinum neurotoxin type A (BoNT-A) in patients with chronic…”
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Study of Charge Trapping Effects on AlGaN/GaN HEMTs Under UV Illumination With Pulsed I-V Measurement by Nagarajan, Venkatesan, Chen, Kun-Ming, Chen, Bo-Yuan, Huang, Guo-Wei, Chuang, Chia-Wei, Lin, Chuang-Ju, Anandan, Deepak, Wu, Chai-Hsun, Han, Ping-Cheng, Singh, Sankalp Kumar, Luong, Tien-Tung, Chang, Edward Yi

“…The charge trapping effects on AlGaN/GaN HEMTs under UV illumination are investigated using the pulsed current-voltage (I-V) measurement method. The test…”
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