Search Results - "Nagao, Satoru"

Maritime Security and Multilateral Cooperation: A Japanese Perspective by Nagao, Satoru

“…This paper focuses on multilateral naval cooperation. To understand the importance of multilateral naval cooperation, it is necessary to answer three…”
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High-quality nonpolar m -plane GaN substrates grown by HVPE by Fujito, Kenji, Kiyomi, Kazumasa, Mochizuki, Tae, Oota, Hirotaka, Namita, Hideo, Nagao, Satoru, Fujimura, Isao

“…Relatively large size (about 10 mm × 10 mm) m ‐plane GaN substrates are grown by hydride vapor phase epitaxy (HVPE). The high crystalline quality of the…”
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High-quality, 2-inch-diameter m-plane GaN substrates grown by hydride vapor phase epitaxy on acidic ammonothermal seeds by Tsukada, Yusuke, Enatsu, Yuuki, Kubo, Shuichi, Ikeda, Hirotaka, Kurihara, Kaori, Matsumoto, Hajime, Nagao, Satoru, Mikawa, Yutaka, Fujito, Kenji

“…In this paper, we discusse the origin of basal-plane stacking faults (BSFs) generated in the homoepitaxial hydride vapor phase epitaxy (HVPE) growth of m-plane…”
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Possible origin of double-peak emission in InGaN quantum wells on m-plane free-standing GaN substrates by Sakai, Shigeta, Yamaguchi, Atsushi A., Kurihara, Kaori, Nagao, Satoru

“…A new theoretical model has been proposed to explain the origin of the double-peak emission observed characteristically in m-plane InGaN quantum wells (QWs)…”
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Selective-area growth of GaN on non- and semi-polar bulk GaN substrates by Okada, Shunsuke, Miyake, Hideto, Hiramatsu, Kazumasa, Enatsu, Yuuki, Nagao, Satoru

“…We carried out the selective-area growth of GaN and fabricated InGaN/GaN MQWs on non- and semi-polar bulk GaN substrates by MOVPE. The differences in the GaN…”
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Epitaxial growth of nonpolar AlN films on ZnO substrates using room temperature grown GaN buffer layers by Ueno, Kohei, Kobayashi, Atsushi, Ohta, Jitsuo, Fujioka, Hiroshi, Amanai, Hidetaka, Nagao, Satoru, Horie, Hideyoshi

“…The authors have grown nonpolar AlN layers on m -plane ZnO substrates using pulsed laser deposition and investigated their structural properties. The direct…”
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Selective Area Growth of Semipolar ($20\bar{2}1$) and ($20\bar{2}\bar{1}$) GaN Substrates by Metalorganic Vapor Phase Epitaxy by Jinno, Daiki, Ma, Bei, Miyake, Hideto, Hiramatsu, Kazumasa, Enatsu, Yuuki, Nagao, Satoru

“…We carried out the selective area growths of GaN on semipolar ($20\bar{2}1$), ($20\bar{2}\bar{1}$), and related non- and semi-polar GaN substrates by…”
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Growth of a -plane GaN on lattice-matched ZnO substrates using a room-temperature buffer layer by Kobayashi, Atsushi, Kawano, Satoshi, Ueno, Kohei, Ohta, Jitsuo, Fujioka, Hiroshi, Amanai, Hidetaka, Nagao, Satoru, Horie, Hideyoshi

“…Nonpolar a -plane GaN films were grown on nearly lattice-matched a -plane ZnO substrates by pulsed laser deposition. Growth of GaN on a -plane ZnO at…”
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Room temperature growth of semipolar AlN (1$ bar 1 $02) films on ZnO (1$ bar 1 $02) substrates by pulsed laser deposition by Ueno, Kohei, Kobayashi, Atsushi, Ohta, Jitsuo, Fujioka, Hiroshi, Amanai, Hidetaka, Nagao, Satoru, Horie, Hideyoshi

“…Semipolar AlN $(1 \bar 102) $ films have been prepared on ZnO $(1 \bar 102) $ substrates by employing room temperature (RT) grown AlN layers using pulsed laser…”
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Room-temperature epitaxial growth of high-quality m -plane InGaN films on ZnO substrates by Shimomoto, Kazuma, Kobayashi, Atsushi, Ueno, Kohei, Ohta, Jitsuo, Oshima, Masaharu, Fujioka, Hiroshi, Amanai, Hidetaka, Nagao, Satoru, Horie, Hideyoshi

“…The authors have grown high‐quality m ‐plane In0.36Ga0.64N (1$ \bar 1 $00) films on ZnO (1$ \bar 1 $00) substrates at room temperature (RT) by pulsed laser…”
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Bulk GaN crystals grown by HVPE by Fujito, Kenji, Kubo, Shuichi, Nagaoka, Hirobumi, Mochizuki, Tae, Namita, Hideo, Nagao, Satoru

“…We succeeded in preparing very thick c-plane bulk gallium nitride (GaN) crystals grown by hydride vapor phase epitaxy. Growth of the bulk GaN crystals was…”
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The Role of Japan-India-Sri Lanka Maritime Security Cooperation in the Trump Era by Nagao, Satoru

“…This paper focuses on the importance of Japan-India-Sri Lanka cooperation in the Trump era. Japan's security policy gains even greater salience after Donald…”
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Rho-associated, coiled-coil-containing protein kinase 2 regulates expression of mineralocorticoid receptor to mediate sodium reabsorption in mice by Sekiguchi, Kensuke, Matoba, Keiichiro, Nagai, Yosuke, Nagao, Satoru, Ohashi, Shinji, Mitsuyoshi, Etsuko, Hayashi, Takeshi, Kawanami, Daiji, Yokota, Tamotsu, Shibata, Hirotaka, Utsunomiya, Kazunori, Nishimura, Rimei

“…The mineralocorticoid receptor (MR) is a member of the nuclear receptor family that was initially identified to regulate blood pressure through its ability to…”
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Weakly Index Guided Buried-Stripe Type 980 nm Laser Diodes Grown by a Combination of Gas Source Molecular Beam Epitaxy and Metalorganic Vapor Phase Epitaxy with an AlGaAs/InGaP/GaAs Double Etch Stop Structure by Horie, Hideyoshi, Nagao, Satoru, Shimoyama, Kenji, Fujimori, Toshinari

“…In order to fabricate weakly index guided buried-stripe type 980 nm laser diodes (LDs) precisely and reproducibly, we have developed a novel double etch stop…”
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Reflection high-energy electron diffraction intensity oscillations during GexSi1-x MBE growth on Si(001) substrates by SAKAMOTO, K, SAKAMOTO, T, NAGAO, S, HASHIGUCHI, G, KUNIYOSHI, K, BANDO, Y

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Pressure Dependence of Band Discontinuity in GaAs/AlInP Quantum Well Structures by Nakayama, Takeshi, Minami, Fujio, Nagao, Satoru, Inoue, Yuichi, Gotoh, Hideki

“…We have performed high-pressure photoluminescence measurements on GaAs/AlInP quantum wells of widths 10 to 100 Å at liquid helium temperatures. It is found…”
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CW operation and extremely low capacitance of TJ-BH MQW laser diodes fabricated by entire MOVPE by SHIMOYAMA, K, KATOH, M, SUZUKI, Y, SATOH, T, INOUE, Y, NAGAO, S, GOTOH, H

“…Transverse junction buried heterostructure laser diodes using an MQW active layer have been successfully fabricated by an entire MOVPE. The employed MQW has…”
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Hydride vapor phase epitaxy of GaN on the vicinal c-sapphire with a CrN interlayer by Lee, Hyo-Jong, Ha, Jun-Seok, Lee, Hyun-Jae, Lee, Seog Woo, Lee, Sang Hyun, Goto, Hiroki, Hong, Soon-Ku, Cho, Meoung Whan, Yao, Takafumi, Fujito, Kenji, Shimoyama, Kenji, Namita, Hideo, Nagao, Satoru

“…Recently, an innovative method of fabricating vertical light-emitting diode (LED) was introduced by the chemically lift-off (CLO) process. Such fabrication of…”
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Longitudinal-mode characteristics of weakly index-guided buried-stripe type 980-nm laser diodes with and without substrate-mode-induced phenomena by Horie, H., Arai, N., Yamamoto, Y., Nagao, S.

“…We have carried out a systematic experimental study of the longitudinal-mode characteristics of 980-nm laser diodes with a weakly index-guided buried-stripe…”
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Reflection High-Energy Electron Diffraction Intensity Oscillations during Ge x Si 1-x MBE Growth on Si(001) Substrates by Sakamoto, Kinihiro, Sakamoto, Tsunenori, Nagao, Satoru, Hashigutchi, Gen, Kuniyoshi, Katsuya, Bando, Yoshio

“…Reflection high-energy electron diffraction (RHEED) intensity oscillations during the heteroepitaxy of Ge x Si 1- x on a Si(001) substrate were observed for…”
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