Search Results - "Naganawa, Moe"
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Electrical characteristics of Au/Ni Schottky diodes on cleaved m-plane surfaces of free-standing n-GaN substrates
Published in Japanese Journal of Applied Physics (01-04-2016)“…We report electrical characteristics of 12 Ni Schottky contacts formed on an m-plane surface, which is a cleaved side surface of a c-plane free-standing n-GaN…”
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Electrical characteristics of a-plane low-Mg-doped p-GaN Schottky contacts
Published in Physica Status Solidi. B: Basic Solid State Physics (01-05-2015)“…Electrical characteristics of a variety of Schottky contacts formed with ten metal species on the a‐plane of p‐type low‐Mg‐doped GaN grown on r‐plane sapphire…”
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Journal Article