Search Results - "Nagahama, S"

Optical gain spectra for near UV to aquamarine (Al,In)GaN laser diodes by Kojima, K, Schwarz, Ulrich T, Funato, M, Kawakami, Y, Nagahama, S, Mukai, T

“…Optical gain spectra presented for (Al,In)GaN laser diodes with lasing wavelength ranging from UV (375 nm) to aquamarine (470 nm) show a strong increase in…”
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Interplay of built-in potential and piezoelectric field on carrier recombination in green light emitting InGaN quantum wells by Schwarz, Ulrich T., Braun, H., Kojima, K., Kawakami, Y., Nagahama, S., Mukai, T.

“…The authors measure the interplay of piezoelectric field and built-in potential on carrier recombination and quantum confined Stark effect in green light…”
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InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices by NAKAMURA, S, SENOH, M, SANO, M, CHOCHO, K, NAGAHAMA, S.-I, IWASA, N, YAMADA, T, MATSUSHITA, T, KIYOKU, H, SUGIMOTO, Y, KOZAKI, T, UMEMOTO, H

“…InGaN multi-quantum-well-structure laser diodes with Al 0.14 Ga 0.86 N/GaN modulation doped strained-layer superlattice cladding layers grown on an epitaxially…”
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InGaN-based multi-quantum-well-structure laser diodes by NAKAMURA, S, SENOH, M, NAGAHAMA, S.-I, IWASA, N, YAMADA, T, MATSUSHITA, T, KIYOKU, H, SUGIMOTO, Y

“…InGaN multi-quantum-well (MQW) structure laser diodes (LDs) fabricated from III-V nitride materials were grown by metalorganic chemical vapor deposition on…”
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Synchronized Propagation Mechanism for Crystalline-State Polymerization of p-Xylylenediammonium Disorbate by Nagahama, Sadamu, Matsumoto, Akikazu

“…We describe the results of the topochemical polymerization of p-xylylenediammonium disorbate as the bifunctional monomer in the crystalline state via a radical…”
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Superbright green InGaN single-quantum-well-structure light-emitting diodes by NAKAMURA, S, SENOH, M, IWASA, N, NAGAHAMA, S.-I, YAMADA, T, MUKAI, T

“…Superbright green InGaN single quantum well (SQW) structure light-emitting diodes (LEDs) with a luminous intensity of 12 cd were fabricated. The luminous…”
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Recent progress of nitride-based light emitting devices by Mukai, T., Nagahama, S., Sano, M., Yanamoto, T., Morita, D., Mitani, T., Narukawa, Y., Yamamoto, S., Niki, I., Yamada, M., Sonobe, S., Shioji, S., Deguchi, K., Naitou, T., Tamaki, H., Murazaki, Y., Kameshima, M.

“…We review the recent progress of nitride‐based light‐emitting diodes (LEDs) and discuss the relation between dislocation density and quantum efficiency. We…”
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High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures by NAKAMURA, S, SENOH, M, IWASA, N, NAGAHAMA, S.-I

“…High-brightness blue, green and yellow light-emitting diodes (LEDs) with quantum well structures based on III-V nitrides were grown by metalorganic chemical…”
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Stimulated emission at 474nm from an InGaN laser diode structure grown on a (112¯2) GaN substrate by Kojima, K., Funato, M., Kawakami, Y., Masui, S., Nagahama, S., Mukai, T.

“…The stimulated emissions from semipolar InGaN laser diode (LD) structures grown on (112¯2) GaN substrates are observed at room temperature under photopumped…”
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Blue-Violet Nitride Lasers by Nagahama, S., Yanamoto, T., Sano, M., Mukai, T.

“…It is well known that GaN‐based semiconductors are the most excellent material for short wavelength light‐emitting devices. In this paper, we review the…”
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InGaN multi-quantum-well-structure laser diodes with cleaved mirror cavity facets by NAKAMURA, S, SENOH, M, NAGAHAMA, S.-I, IWASA, N, YAMADA, T, MATSUSHITA, T, KIYOKU, H, SUGIMOTO, Y

“…InGaN multi-quantum-well (MQW)-structure laser diodes (LDs) fabricated from III–V nitride materials were grown by metalorganic chemical vapor deposition on…”
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High-power, long-lifetime InGaN multi-quantum-well-structure laser diodes by NAKAMURA, S, SENOH, M, NAGAHAMA, S.-I, IWASA, N, YAMADA, T, MATSUSHITA, T, SUGIMOTO, Y, KIYOKU, I.-I

“…The continuous-wave operation of InGaN multi-quantum-well structure laser diodes (LDs) was demonstrated at room temperature with a high output power of 50 mW,…”
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Expanding Emission Wavelength on Nitride Light-Emitting Devices by Mukai, T., Nagahama, S., Yanamoto, T., Sano, M.

“…First, we review the recent progress on nitride‐based light‐emitting diodes (LEDs) and discuss the relation between dislocation density and luminous…”
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Gain suppression phenomena observed in InxGa1−xN quantum well laser diodes emitting at 470nm by Kojima, K., Funato, M., Kawakami, Y., Nagahama, S., Mukai, T., Braun, H., Schwarz, U. T.

“…Optical gain spectra were measured for InGaN-based laser diodes (LDs) emitting at 406nm (LD406) and 470nm (LD470) by employing the Hakki-Paoli method. The…”
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Over 200 mW on 365 nm ultraviolet light emitting diode of GaN‐free structure by Morita, Daisuke, Sano, Masahiko, Yamamoto, Masashi, Nonaka, Mitsuhiro, Yasutomo, Katsuhiro, Akaishi, Kazuyuki, Nagahama, Shin‐ichi, Mukai, Takashi

“…We have remarkably improved the emission efficiency of 365 nm ultraviolet (UV) light emitting diode (LED). Rugged pattern is fabricated on the surface of LED…”
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Cause-specific mortality risks of anesthesiologists by ALEXANDER, Bruce H, CHECKOWAY, Harvey, NAGAHAMA, Sonia I, DOMINO, Karen B

“…The health-related effects of the operating room environment are unclear. The authors compared mortality risks of anesthesiologists to those of internal…”
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CHARACTERISTICS OF ULTRAVIOLET LASER DIODES COMPOSED OF QUATERNARY AlxInyGa(1-x-y)N by Nagahama, S, Yanamoto, T, Sano, M, Mukai, T

“…Uv laser diodes (LDs) whose active layers were composed of quaternary AlxInyGa(1-x-y)N were grown on epitaxially laterally overgrown GaN substrates by MOCVD…”
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Comparison between optical gain spectra of Inx Ga1-x N/In0.02Ga0.98N laser diodes emitting at 404 nm and 470 nm by Kojima, K., Funato, M., Kawakami, Y., Braun, H., Schwarz, U. T., Nagahama, S., Mukai, T.

“…We investigate the gain formation properties of Inx Ga1–x N laser diodes emitting at 404 nm and 470 nm (sample A and B, respectively). Employing the…”
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Characteristics of Laser Diodes Composed of GaN-Based Semiconductor by Nagahama, S., Yanamoto, T., Sano, M., Mukai, T.

“…Violet laser diodes (LDs) with higher power and longer lifetime are required for some applications such as read/write laser light sources of digital versatile…”
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GaN-Based Light-Emitting Diodes and Laser Diodes, and Their Recent Progress by Nagahama, S., Iwasa, N., Senoh, M., Matsushita, T., Sugimoto, Y., Kiyoku, H., Kozaki, T., Sano, M., Matsumura, H., Umemoto, H., Chocho, K., Yanamoto, T., Mukai, T.

“…It is recognized that GaN‐based semiconductor is the most excellent material for short wavelength emitting devices. In this paper, we review the development of…”
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