Search Results - "Nadtochiy, Alexey M."

Increasing the quantum efficiency of InAs/GaAs QD arrays for solar cells grown by MOVPE without using strain-balance technology by Kalyuzhnyy, Nikolay A., Mintairov, Sergey A., Salii, Roman A., Nadtochiy, Alexey M., Payusov, Alexey S., Brunkov, Pavel N., Nevedomsky, Vladimir N., Shvarts, Maxim Z., Martí, Antonio, Andreev, Viacheslav M., Luque, Antonio

“…Research into the formation of InAs quantum dots (QDs) in GaAs using the metalorganic vapor phase epitaxy technique is presented. This technique is deemed to…”
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Light Emitting Devices Based on Quantum Well-Dots by Maximov, Mikhail V., Nadtochiy, Alexey M., Mintairov, Sergey A., Kalyuzhnyy, Nikolay A., Kryzhanovskaya, Natalia V., Moiseev, Eduard I., Gordeev, Nikita Yu, Shernyakov, Yuriy M., Payusov, Alexey S., Zubov, Fedor I., Nevedomskiy, Vladimir N., Rouvimov, Sergei S., Zhukov, Alexey E.

“…We review epitaxial formation, basic properties, and device applications of a novel type of nanostructures of mixed (0D/2D) dimensionality that we refer to as…”
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Hybrid multilevel-multiwavelength signaling scheme for optical data transmission by Maximov, Mikhail V, Shernyakov, Yuri M, Gordeev, Nikita Yu, Dubrovskii, Vladimir G, Nadtochiy, Alexey M, Zhukov, Alexey E

“…We suggest an idea of data encoding scheme based on the switching from the ground state (GS) to excited state (ES) lasing in quantum dot (QD) lasers with…”
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Saturated Layer Gain in Waveguides With InGaAs Quantum Well-Dot Heterostructures by Nadtochiy, Alexey M., Gordeev, Nikita Yu, Kharchenko, Anton A., Mintairov, Sergey A., Kalyuzhnyy, Nikolay A., Berdnikov, Yury S., Shernyakov, Yuriy M., Maximov, Mikhail V., Zhukov, Alexey E.

“…Modal absorptions in laser-like heterostructures containing InAs self-assembled quantum dots (QDs) and InGaAs quantum well-dots (QWDs) have been studied. The…”
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Optical Loss in Microdisk Lasers With Dense Quantum Dot Arrays by Zhukov, Alexey E., Moiseev, Eduard I., Nadtochiy, Alexey M., Fominykh, Nikita A., Ivanov, Konstantin A., Makhov, Ivan S., Maximov, Mikhail V., Zubov, Fedor I., Dubrovskii, Vladimir G., Mintairov, Sergey A., Kalyuzhnyy, Nikolay A., Gordeev, Nikita Yu, Shernyakov, Yuri M., Kryzhanovskaya, Natalia V.

“…We discuss the origin of optical losses in microdisk lasers with a dense array of InGaAs quantum dots in the active region. In particular, we study the effect…”
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Impact of Self-Heating and Elevated Temperature on Performance of Quantum Dot Microdisk Lasers by Zhukov, Alexey E., Kryzhanovskaya, Natalia V., Moiseev, Eduard I., Nadtochiy, Alexey M., Dragunova, Anna S., Maximov, Mikhail V., Zubov, Fedor I., Kadinskaya, Svetlana A., Berdnikov, Yury, Kulagina, Marina M., Mintairov, Sergey A., Kalyuzhnyy, Nikolay A.

“…We discuss the effect of self-heating on performance of injection microdisk lasers operating in continuous-wave (CW) regime at room and elevated temperature. A…”
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Electro-optical resonance modulation of vertical-cavity surface-emitting lasers by Germann, Tim David, Hofmann, Werner, Nadtochiy, Alexey M, Schulze, Jan-Hindrik, Mutig, Alex, Strittmatter, André, Bimberg, Dieter

“…Optical and electrical investigations of vertical-cavity surface-emitting lasers (VCSEL) with a monolithically integrated electro-optical modulator (EOM) allow…”
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Gradual Evolution From Quantum‐Well‐Like to Quantum‐Dot‐Like Characteristics in InGaAs/GaAs Nanostructures by Nadtochiy, Alexey M., Maximov, Mikhail V., Mintairov, Sergey A., Kalyuzhnyy, Nikolay A., Nevedomskiy, Vladimir N., Rouvimov, Sergey S., Zhukov, Alexey E.

“…Dense arrays of carrier localizing indium‐rich regions (referred to as quantum well‐dots, QWDs) formed inside an indium‐depleted residual quantum well by…”
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Ultrasmall microdisk and microring lasers based on InAs/InGaAs/GaAs quantum dots by Maximov, Mikhail V, Kryzhanovskaya, Natalia V, Nadtochiy, Alexey M, Moiseev, Eduard I, Shostak, Ivan I, Bogdanov, Andrey A, Sadrieva, Zarina F, Zhukov, Alexey E, Lipovskii, Andrey A, Karpov, Denis V, Laukkanen, Janne, Tommila, Juha

“…Ultrasmall microring and microdisk lasers with an asymmetric air/GaAs/Al 0.98 Ga 0.02 As waveguide and an active region based on InAs/InGaAs/GaAs quantum dots…”
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Comparative Analysis of InGaAs/GaAs Quantum Dots Produced by Various Epitaxial Techniques by Babichev, Andrey V., Komarov, Sergey D., Tkach, Julia S., Kryzhanovskaya, Natalia V., Nadtochiy, Alexey M., Blokhin, Alexey A., Blokhin, Sergei A., Nevedomskiy, Vladimir N., Maleev, Nikolay A., Gladyshev, Andrey G., Karachinsky, Leonid Ya, Novikov, Innokenty I.

“…We present the results on the formation and micro-photoluminescence studies of In 0.63 Ga 0.37 As/GaAs quantum dots grown by metal-organic vapour-phase epitaxy…”
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Output Power of III-V Injection Microdisk and Microring Lasers by Kryzhanovskaya, Natalia V., Moiseev, Eduard I., Nadtochiy, Alexey M., Melnichenko, Ivan A., Fominykh, Nikita A., Ivanov, Konstantin A., Komarov, Sergey D., Makhov, Ivan S., Lutsenko, Evgenii V., Vainilovich, Aliaksei G., Nahorny, Aliaksei V., Zhukov, Alexey E.

“…Technological progress makes it possible to significantly reduce the size of semiconductor laser emitters to microscales and sizes commensurate with the…”
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Time-resolved temperature-dependent photoluminescence spectroscopy of InGaAs/GaAs quantum well-dots by Ivanov, Konstantin A., Nadtochiy, Alexey M., Kryzhanovskaya, Natalia V., Mintairov, Sergey A., Kalyuzhnyy, Nikolay A., Melnichenko, Ivan A., Maximov, Mikhail V., Zhukov, Alexey E.

“…The paper presents the results of a study of dynamic properties of InGaAs quantum well-dots (QWD) embedded in a GaAs matrix carried out by time-resolved…”
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Influence of the doping type on the temperature dependencies of the photoluminescence efficiency of InGaAlAs/InGaAs/InP heterostructures by Novikov, Innokenty I., Nadtochiy, Alexey M., Potapov, Aleksandr Yu, Gladyshev, Andrey G., Kolodeznyi, Evgenii S., Rochas, Stanislav S., Babichev, Andrey V., Andryushkin, Vladislav V., Denisov, Dmitriy V., Karachinsky, Leonid Ya, Egorov, Anton Yu, Bougrov, Vladislav E.

“…The temperature dependencies of photoluminescence efficiency of InGaAlAs/InGaAs/InP heterostructures with 1550 nm range strained quantum wells have been…”
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Room Temperature Lasing in 1-μm Microdisk Quantum Dot Lasers by Kryzhanovskaya, Natalia V., Zhukov, Alexey E., Maximov, Mikhail V., Moiseev, Eduard I., Shostak, Ivan I., Nadtochiy, Alexey M., Kudashova, Yulia V., Lipovskii, Andrey A., Kulagina, Marina M., Troshkov, Sergey I.

“…Lasing characteristics of InAs/InGaAs quantum dot microdisks with diameter varied from 1 to 6 μm were studied under optical pumping. The disks were fabricated…”
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Single-Mode Emission From 4-9-μm Microdisk Lasers With Dense Array of InGaAs Quantum Dots by Kryzhanovskaya, Natalia V., Maximov, Mikhail V., Zhukov, Alexey E., Nadtochiy, Alexey M., Moiseev, Eduard I., Shostak, Ivan I., Kulagina, Marina M., Vashanova, Ksenia A., Zadiranov, Yury M., Troshkov, Sergey I., Nevedomsky, Vladimir V., Ruvimov, Sergey A., Lipovskii, Andrey A., Kalyuzhnyy, Nikolay A., Mintairov, Sergey A.

“…A dense array of InGaAs quantum dots formed by MOCVD on a misoriented GaAs substrate has been used as an active medium of microdisk resonators of various…”
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Influence of low temperatures and thermal annealing on the optical properties of InGaPAs quantum dots by Andryushkin, V.V., Dragunova, A.S., Komarov, S.D., Nadtochiy, A.M., Gladyshev, A.G., Babichev, A.V., Uvarov, A.V., Novikov, I.I., Kolodeznyi, E.S., Karachinsky, L.Ya, Kryzhanovskaya, N.V., Nevedomskii, V.N., Egorov, A.Yu, Bougrov, V.E.

“…The results of the study of the optical properties of low-density InGaPAs quantum dots, as well as the effect of low temperatures and thermal annealing…”
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Photoluminescence of GaPNAs/GaP(N) superlattices and bulk GaPN layers on GaP substrates by Nikitina, Ekaterina V., Sobolev, Maxim S., Pirogov, Evgeny V., Makhov, Ivan S., Nadtochiy, Alexey M., Vasilkova, Elena I., Kryzhanovskaya, Natalia V.

“…The addition of a few percent of nitrogen to GaP or GaPAs allows obtaining GaPNAs solid solutions that are lattice-matched to the silicon substrate over a wide…”
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15 mW of continuous wave single transverse mode output power from planar 960 nm bottom-emitting VCSELs with multiple tapered oxide layers by Lott, James A., Maleev, Nikolai A., Kuzmenkov, Alexander G., Kulagina, Marina M., Zadiranov, Yuriy M., Gladyshev, Andrey G., Nadtochiy, Alexey M., Nikitina, Ekaterina V., Ledentsov, Nikolai N., Ustinov, Victor M.

“…We report planar vertical cavity surface emitting lasers with record 15 mW of continuous wave single transverse mode output power that employ spatially…”
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