Search Results - "Na, Kyoung Il"

Thermal and Electrical Properties of 5-nm-Thick TaN Film Prepared by Atomic Layer Deposition Using a Pentakis(ethylmethylamino)tantalum Precursor for Copper Metallization by Bae, Nam-Jin, Cho, Hyun-Ick, Park, Ki-Yeol, Boo, Sung-Eun, Bae, Jeung-Ho, Lee, Jung-Hee

“…We first report on the thermal stability and electrical properties of 5 nm-thick TaN films prepared by atomic layer deposition (ALD) using…”
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Fully depleted double-gate MSDRAM cell with additional nonvolatile functionality by Park, Ki-Heung, Bawedin, Maryline, Lee, Jong-Ho, Bae, Young-Ho, Na, Kyoung-Il, Lee, Jung-Hee, Cristoloveanu, Sorin

“…► A fully depleted SONOS-type 1T-DRAM cell based on MSD hysteresis was experimentally demonstrated. ► The SONOS storage node enables additional nonvolatile…”
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Variation in the electrical properties of 100 V/100 a rated mesh and stripe TDMOSFETs (Trench Double-Diffused MOSFETs) for motor drive applications by Na, Kyoung-Il, Kah, Dong-Ha, Kim, Sang-Gi, Koo, Jin-Gun, Kim, Jongdae, Yang, Yil-Suk, Lee, Jin-Ho

“…The vertical power metal-oxide semiconductor field-effect transistors (MOSFETs) with deep trench structures are the most promising candidates to overcome the…”
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Enhanced Electrical Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistor with p-GaN Back Barriers and Si Delta-Doped Layer by Lee, Hwa-Chul, Hyun, Sun-Young, Cho, Hyun-Ick, Ostermaier, Clemens, Kim, Ki-Won, Ahn, Sang-Il, Ha, Jong-Bong, Kwon, Dae-Hyuk, Hahn, Cheol-Koo, Hahm, Sung-Ho, Choi, Hyun-Chul, Lee, Jung-Hee

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Double-gate 1T-DRAM cell using nonvolatile memory function for improved performance by Park, Ki-Heung, Cristoloveanu, Sorin, Bawedin, Maryline, Bae, Youngho, Na, Kyoung-Il, Lee, Jong-Ho

“…► The DG 1T-DRAM cell has storage node on one gate for nonvolatile memory function. ► Experimental results show improved sensing margin and retention time. ►…”
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Lateral and vertical coupling effects in MIGFETs by Eminente, S., Kyoung-Il Na, Cristoloveanu, S., Mathew, L., Vandooren, A.

“…We have performed measurements on double-gate Fin-FETs with independent gate contacts in order to study the coupling effects. In these devices, it is possible…”
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A novel trench gate MOSFET with a multiple-layered gate oxide for high-reliability operation by Kim, Sang Gi, Kah, Dong Ha, Na, Kyoung Il, Yang, Yil Suk, Koo, Jin Gun, Kim, Jong Dae, Lee, Jin Ho, Park, Hoon Soo

“…Gate dielectrics in trench structures for trench gate metal oxide semiconductor field-effect transistor (MOSFET) power devices are very important to realize…”
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