Search Results - "NURMELA, A"
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1
Reactive sputter deposition and properties of TaxN thin films
Published in Microelectronic engineering (01-10-2002)Get full text
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2
Influence of the seed layer on structural and electro-acoustic properties of sputter-deposited AlN resonators
Published in Thin solid films (30-10-2009)“…The growth of high-quality AlN films has been studied by reactive sputtering onto Mo electrodes with Ni, Ti, and TiW seed layers and subsequent integration…”
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3
Alpha–proton elastic scattering cross sections for ERDA in the resonance region
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01-08-2004)“…We have investigated alpha–proton elastic scattering for He-ERDA. The broad maximum of the elastic scattering resonance around E He=8.8 MeV is most important…”
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4
Stress control of sputter-deposited Mo-N films for micromechanical applications
Published in Microelectronic engineering (2002)“…Sputter-deposited metallic thin films are attractive materials for micromechanics but they suffer from large stress variations within the batch or even a…”
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5
Ion beam studies of hydrogen implanted Si wafers
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01-06-2004)“…We have studied silicon-on-insulator (SOI) materials with two different ion beam analysis methods. The SOI samples were implanted with boron and hydrogen ions…”
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6
Influence of hydrogen dose and boron doping on the ion cutting of Si
Published in Surface and interface analysis (01-09-2003)“…Ion beam techniques were used to study silicon‐on‐insulator (SOI) structures manufactured by the ion cutting process. Silicon wafers and epitaxial Si layers…”
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7
Cold ion-cutting of hydrogen implanted Si
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01-05-2002)“…The strength of the H-implanted layer has been measured in 〈1 0 0〉 , 〈1 1 1〉 and 〈1 1 0〉 oriented Si wafers using the crack opening method. The required…”
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8
RBS and ERD cross-sections and optical model parameters for the analysis of lithium, boron and nickel
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01-03-2000)“…Elastic scattering cross-sections for RBS analysis of nickel by 7 Li and 11 B ion backscattering near the Coulomb barrier have been determined. The lithium ion…”
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9
Transfer of thin Si layers by cold and thermal ion cutting
Published in Journal of materials science. Materials in electronics (01-05-2003)“…We have used the crack-opening method to study the mechanical exfoliation behavior in hydrogen-implanted and bonded Cz Si. We found that the crystal…”
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10
Influence of the seed layer on structural and electro-acoustic properties of sputter-deposited AIN resonators
Published in Thin solid films (2009)Get full text
Journal Article -
11
ZnO for thin film BAW devices
Published in IEEE Ultrasonics Symposium, 2005 (2005)Get full text
Conference Proceeding -
12
Elastic scattering cross sections for 6Li and 7Li scattering by aluminum, silicon and titanium below 12 MeV at angles of 140 ∘ and 170
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01-08-1999)“…Elastic scattering cross sections for 6Li and 7Li scattering by natural aluminum, silicon and titanium have been measured in the energy range of 4–11 MeV…”
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13
Reactive sputter deposition and properties of Ta sub(x)N thin films
Published in Microelectronic engineering (01-10-2002)“…The aim of this work was to evaluate tantalum nitride thin films fabricated using reactive sputtering with adjusted deposition parameters. Thin Ta sub(x)N…”
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14
Elastic scattering cross sections for the analysis of helium by 1H backscattering and hydrogen by 4He ERD
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01-03-1998)“…Elastic scattering cross sections for the analysis of helium by proton backscattering have been determined in the energy region 1.6–2.7 MeV. The measurements…”
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15
Reactive sputter deposition and properties of Ta xN thin films
Published in Microelectronic engineering (2002)“…The aim of this work was to evaluate tantalum nitride thin films fabricated using reactive sputtering with adjusted deposition parameters. Thin Ta x N films…”
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Journal Article -
16
Transfer of thin Si layers by cold and thermal ion cutting
Published in Journal of materials science. Materials in electronics (01-05-2003)“…We have used the crack-opening method to study the mechanical exfoliation behavior in hydrogen-implanted and bonded Cz Si. We found that the crystal…”
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Journal Article -
17
Nonlinear effects in solidly-mounted ZnO BAW resonators
Published in 2008 IEEE Ultrasonics Symposium (01-11-2008)“…The mechanical nonlinearity due to high power level in zinc oxide thin film bulk acoustic wave resonators has been studied in this work. The nonlinear behavior…”
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Conference Proceeding -
18
Piezoelectrically transduced single-crystal-silicon plate resonators
Published in 2008 IEEE Ultrasonics Symposium (01-11-2008)“…We report on the design, fabrication and characterization of piezoelectrically actuated single-crystal silicon plate resonators vibrating mainly in their bulk…”
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Conference Proceeding -
19
P2G-3 Piezotransduced Single-Crystal Silicon BAW Resonators
Published in 2007 IEEE Ultrasonics Symposium Proceedings (01-10-2007)“…We report on the design, fabrication and measurement of 13-MHz piezoelectrically actuated single-crystal silicon beam resonators operating in the first…”
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Conference Proceeding -
20
Piezoelectrically actuated micromechanical BAW resonators
Published in 2008 IEEE Ultrasonics Symposium (01-11-2008)“…We report on piezoelectrically actuated 13 MHz silicon beam resonators operating in the fundamental length extensional BAW mode. The resonance is evoked using…”
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Conference Proceeding