Search Results - "NORTHRUP, J. E"

Mobility enhancement in polymer organic semiconductors arising from increased interconnectivity at the level of polymer segments by Northrup, J. E.

“…We present a model to estimate the mobility in polymers and to gauge the effect of increased interconnectivity at the level of polymer segments. The model…”
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Radiation induced recombination centers in organic solar cells by Street, R. A., Northrup, J. E., Krusor, B. S.

“…Prolonged x-ray exposure of bulk heterojunction organic solar cells induces deep trap states that are observed in measurements of the photocurrent spectral…”
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Transport in polycrystalline polymer thin-film transistors by STREET, R. A, NORTHRUP, J. E, SALLEO, A

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High Carrier Mobility Polythiophene Thin Films: Structure Determination by Experiment and Theory by DeLongchamp, D. M., Kline, R. J., Lin, E. K., Fischer, D. A., Richter, L. J., Lucas, L. A., Heeney, M., McCulloch, I., Northrup, J. E.

“…The structure within crystalline thin films of a high‐carrier‐mobility polythiophene is studied with complementary characterization methods and…”
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Two-dimensional deformation potential model of mobility in small molecule organic semiconductors by Northrup, J. E.

“…An acoustic deformation potential model appropriate for transport in two dimensions is employed to estimate upper limits on the intrinsic hole mobility of…”
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Strong affinity of hydrogen for the GaN(000-1) surface: Implications for molecular beam epitaxy and metalorganic chemical vapor deposition by Northrup, J. E., Neugebauer, J.

“…The stabilities of clean and hydrogen covered GaN(000-1) surfaces are determined using density functional theory together with a finite temperature…”
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Surface energetics, pit formation, and chemical ordering in InGaN alloys by Northrup, J. E., Romano, L. T., Neugebauer, J.

“…We present first-principle calculations of the structure and energetics of the GaN(101_1) surface, and present models for the reconstructions. A strong…”
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Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells by Northrup, J. E., Chua, C. L., Yang, Z., Wunderer, T., Kneissl, M., Johnson, N. M., Kolbe, T.

“…For AlGaN-based multi-quantum-well light emitters grown on c-plane substrates there is a tendency for the polarization of the emitted light to switch from…”
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Determination of wurtzite GaN lattice polarity based on surface reconstruction by Smith, A. R., Feenstra, R. M., Greve, D. W., Shin, M.-S., Skowronski, M., Neugebauer, J., Northrup, J. E.

“…We identify two categories of reconstructions occurring on wurtzite GaN surfaces, the first associated with the N face, (0001̄), and the second associated with…”
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Recent developments in surface studies of GaN and AlN by Feenstra, R. M., Dong, Y., Lee, C. D., Northrup, J. E.

“…Recent developments in the structural analysis of GaN and AlN surfaces are reviewed, and the implications of these structures for molecular beam epitaxial…”
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Inversion of wurtzite GaN(0001) by exposure to magnesium by Ramachandran, V., Feenstra, R. M., Sarney, W. L., Salamanca-Riba, L., Northrup, J. E., Romano, L. T., Greve, D. W.

“…Magnesium incorporation during the molecular-beam epitaxy growth of wurtzite GaN is found to invert the Ga-polar (0001) face to the N-polar face. The polarity…”
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Inversion domains in GaN grown on sapphire by Romano, L. T., Northrup, J. E., O’Keefe, M. A.

“…Planar defects observed in GaN films grown on (0001) sapphire have been identified as inversion domain boundaries (IDBs) by a combination of high resolution…”
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Molecular dynamics and first-principles computations of Ga adlayers on GaN(0001) by Rinehimer, J. A., Widom, M., Northrup, J. E., Feenstra, R. M.

“…Structural models for Ga adlayer(s) on GaN(0001) are investigated using both molecular dynamics and first‐principles computations. An energetically favourable…”
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Enhanced vertical and lateral hole transport in high aluminum-containing AlGaN for deep ultraviolet light emitters by Cheng, B., Choi, S., Northrup, J. E., Yang, Z., Knollenberg, C., Teepe, M., Wunderer, T., Chua, C. L., Johnson, N. M.

“…Improved p-type conductivity is demonstrated in AlGaN:Mg superlattice (SL) cladding layers with average Al composition ∼60%. The vertical conductivity ranges…”
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Magnesium incorporation in GaN grown by molecular-beam epitaxy by Ptak, A. J., Myers, T. H., Romano, L. T., Van de Walle, C. G., Northrup, J. E.

“…A pronounced dependence of Mg incorporation on surface polarity was observed in a series of Mg step-doped epitaxial GaN layers grown by rf-plasma-assisted…”
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Influence of microstructure on the carrier concentration of Mg-doped GaN films by Romano, L. T., Kneissl, M., Northrup, J. E., Van de Walle, C. G., Treat, D. W.

“…Room-temperature Hall effect measurements of (0001) Mg-doped GaN films grown on sapphire substrates by metalorganic chemical vapor deposition show a reduction…”
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GaN(0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations by SMITH, A. R, FEENSTRA, R. M, GREVE, D. W, SHIN, M.-S, SKOWRONSKI, M, NEUGEBAUER, J, NORTHRUP, J. E

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Adsorption and incorporation of silicon at GaN(0001) surfaces by Rosa, A. L., Neugebauer, J., Northrup, J. E., Lee, Chae-Deok, Feenstra, R. M.

“…We have studied the adsorption and incorporation of Si at GaN(0001) surfaces employing density-functional theory and scanning tunneling microscopy (STM)…”
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Energetics of AlN thin films on the Al2O3(0001) surface by Di Felice, R., Northrup, J. E.

“…We present an ab initio study of the energetics and atomic structure of films consisting of approximately 1 bilayer of AlN on the c-plane sapphire surface. We…”
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Entropy-driven stabilization of a novel configuration for acceptor-hydrogen complexes in GaN by Limpijumnong, S, Northrup, J E, Van De Walle, C G

“…We present a model for the microscopic structure of Mg-H complexes in GaN, explaining the unusual bond angle observed in recent vibrational spectroscopy…”
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