Search Results - "NICOLLIAN, E. H"

Generalized guide for MOSFET miniaturization by Brews, J.R., Fichtner, W., Nicollian, E.H., Sze, S.M.

“…As MOSFET dimensions are reduced, lower voltages, shallower junctions, thinner oxides, and heavier doping help to maintain long-channel behavior. A simple,…”
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AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SiO2 by Nicollian, E. H., Goetzberger, A., Berglund, C. N.

“…Injection of carriers into thermally grown SiO2 from an avalanche plasma in silicon is a new way of achieving high current densities in SiO2. Electron…”
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Lateral AC current flow model for metal-insulator-semiconductor capacitors by Nicollian, E.H., Goetzberger, A.

“…The admittance-voltage characteristic of a metal-insulator-semiconductor capacitor is explained in the depletion-inversion range for the case in which the…”
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SURFACE STATES IN SILICON FROM CHARGES IN THE OXIDE COATING by Goetzberger, A., Heine, V., Nicollian, E. H.

“…The experimentally observed distributions of surface state density versus energy is correlated with the existence of coulombic centers in the oxide. Single…”
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A new model for the thermal oxidation kinetics of silicon by NICOLLIAN, E. H, REISMAN, A

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Passivation of defects in polycrystalline superlattices and quantum well structures by TSU, R, NICOLLIAN, E. H, REISMAN, A

“…In order to broaden the available materials for superlattices and quantum well structures, well-passivated polycrystalline semiconductors and amorphous oxides…”
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The modelling of silicon oxidation from 1×10-5 to 20 atmospheres by REISMAN, A, NICOLLIAN, E. H, WILLIAMS, C. K, MERZ, C. J

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Pumped channel MOS photodetector by Nicollian, E.H., Goetzberger, A.

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A quantitative theory of 1/f-type noise due to interface states in thermally oxidized silicon by Nicollian, E.H., Melchior, H.

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Measurement of fast surface state parameters by the A-C MOS conductance method by Nicollian, E.H., Goetzberger, A.

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Evaluation of channel properties by metal insulator semiconductor measurements by Nicollian, E.H., Goetzberger, A.

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Electrical suppression of microplasmas by Goetzberger, A., Melchior, H., Nicollian, E.H., Lynch, W.T.

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Electrical characterization of defects created in the Si-SiO2 system by ionizing radiation: Radiation/process induced defects by NICOLLIAN, E. H

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Using the MIS capacitor for doping profile measurements with minimal interface state error by Nicollian, E.H., Hanes, M.H., Brews, J.R.

“…Doping profiles can be measured to best advantage by using MIS capacitors when one is interested in the profile either very close to the semiconductor surface…”
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The Si-SiO2 Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique by Nicollian, E. H., Goetzberger, A.

“…Measurements of the equivalent parallel conductance of metal‐insulator‐semiconductor (MIS) capacitors are shown to give more detailed and accurate information…”
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Statistical phenomena associated with Si-SiO(2 < /inf > interface states by Nicollian, E H, Goetzberger, A

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Creation of Interface States by Avalanche Effect by Nicollian, E. H., Goetzberger, A.

“…Charge and interface states are introduced into the oxide in an MOS capacitor by producing avalanche break-down at the semiconductor surface. Both the charge…”
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Electrical characterization of defects created in the Si-SiO2 system by ionizing radiation by Nicollian, Edward H.

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Use of O-Doped AlxGa1-xAs for the Insulating Layer in MIS Structures by Casey, H C, Cho, A Y, Nicollian, E H

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Use of oxygen-doped Al x Ga1− x As for the insulating layer in MIS structures by Casey, H. C., Cho, A. Y., Nicollian, E. H.

“…Metal-insulator-semiconductor capacitors were prepared by doping an Al0.5Ga0.5As layer with oxygen in order to demonstrate a lattice-matched single-crystal…”
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