Search Results - "NARSALE, A. M"

Role of rapid thermal annealing in the formation of crystalline SiGe nanoparticles by Joshi, Kapil U., Kabiraj, D., Narsale, A.M., Avasthi, D.K., Gundurao, T.K., Warang, T.N., Kothari, D.C.

“…In the present work, we report the formation of SiGe nanoparticles embedded in SiO 2 film by atom beam sputtering method in conjunction with Rapid Thermal…”
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Ion beam synthesis of germanium nanostructures by Joshi, Kapil U., Narsale, A.M., Kanjilal, D., Warang, T.N., Gundurao, T.K., Kothari, D.C.

“…Si and Ge nanocrystals embedded in SiO 2 have attracted much attention due to their possible application in integrated optoelectronic devices. Ion beam mixing…”
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Embedded SiGe nanoparticles formed by atom beam co-sputtering of Si, Ge, SiO2 by JOSHI, Kapil U, KABIRAJ, D, NARSALE, A. M, AVASTHI, D. K, WARANG, T. N, KOTHARI, D. C

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Annealing behaviour of GaAs implanted with 70 MeV (120)Sn ions by Ali, Yousuf P, Nair, Geeta, Narsale, A M, Chandrasekaran, K S, Arora, B M

“…Single crystal GaAs substrates implanted with 70 MeV (120)Sn have been investigated by X-ray diffraction (XRD) and electrical resistance measurements after…”
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Electrical properties of TiNx films on p-silicon substrates obtained by reactive ion beam assisted deposition technique by NARSALE, A. M, YOUSUF PYAR ALI, KOTHARI, D. C, GUZMAN, L, MIOTELLO, A

“…The electrical resistivity of TiNx films, and the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of TiNx-p-Si Schottky diode structures,…”
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Reaction kinetics of annealing of high energy implantation by XRD by Nair, Geeta P., Chandrasekaran, K.S., Arora, B.M., Narsale, A.M., Belekar, M.M., Sukhatankar, K.V.

“…The annealing of structural defects caused by high energy implantation is studied using X-ray diffraction. The implanted sample (dose: 1 × 10 14 ions/cm 2) was…”
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Synthesis of good quality LCMO/YBCO heterostructures by pulsed laser deposition technique by Wanchoo, S.K., Jasudasan, J., Bagwe, V.C., Thakur, A.D., Vaishnav, U.D., Pai, S.P., Narsale, A.M., Pinto, R.

“…Deposition of multilayers of La 0.7Ca 0.3MnO 3–YBa 2Cu 3O 7−δ offers great challenges and opportunities for future spin-based device applications. Pulsed laser…”
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Orientation dependence of surface states in native oxide-GaAs MOS structures by NARSALE, A. M, PRATAP, R, ARORA, B. M

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Effect of rapid thermal annealing on Si rich SiO2 films prepared using atom beam sputtering technique by Warang, Trupti N., Kabiraj, D., Avasthi, D.K., Jain, K.P., Joshi, K.U., Narsale, A.M., Kothari, D.C.

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Embedded SiGe nanoparticles formed by atom beam co-sputtering of Si, Ge, SiO@d2 by Joshi, K U, Kabiraj, D, Narsale, A M, Avasthi, D K, Warang, T N, Kothari, D C

“…Using atom beam co-sputtering of SiO@d2, Ge and Si targets, composite films containing Si, Ge and SiO@dx at different compositions were prepared and annealed…”
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Effect of rapid thermal annealing on Si rich SiO@d2 films prepared using atom beam sputtering technique by Warang, T N, Kabiraj, D, Avasthi, D K, Jain, K P, Joshi, K U, Narsale, A M, Kothari, D C

“…We report here the synthesis of silicon-nanoclusters embedded in SiO@d2 by atom beam co-sputtering technique. A sputtering target consisted of 40% and 60% area…”
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Annealing behaviour of GaAs implanted with 70 MeV super(120)Sn ions by Ali, Y P, Nair, G, Narsale, A M, Chandrasekaran, K S, Arora, B M

“…Single crystal GaAs substrates implanted with 70 MeV super(120)Sn have been investigated by X-ray diffraction (XRD) and electrical resistance measurements…”
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Effect of rapid thermal annealing on Si rich Si02 films prepared using atom beam sputtering technique by WARANG, Trupti N, KABIRAJ, D, AVASTHI, D. K, JAIN, K. P, JOSHI, K. U, NARSALE, A. M, KOTHARI, D. C

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Self-injection length of polarized spins in La0.7Ca0.3MnO3-YBa2Cu3O7-d ferromagnet-superconductor heterostructures by Banerjee, T, Wanchoo, S K, Pai, S P, Neumann-Spallart, M, Narsale, A M, Pinto, R

“…Studies on the self-injection length of polarized spins in La0.7Ca0.3MnO3 (LCMO)-YBa2Cu3O7-d (YBCO) heterostructures on LaAlO3 (LAO) substrates fabricated in…”
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Video Observation of Geminid 2010 from India using a portable system by Pai, Chintamani, Bhaskar, Ankush, Yadav, Virendra, Tewari, R. D, Narsale, A. M

“…Visual observations of meteor showers have been carried out for many decades by astronomers. Modern developments in imaging systems have advanced our knowledge…”
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Dose dependence and annealing behaviour of radiation-induced defects in 70 MeV56Fe implanted GaAs by BELEKAR, M. M, SUKHATANKAR, K. V, NARSALE, A. M, NAIR, Geeta, ARORA, B. M, KANJILAL, D

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Electrical characteristics of high-energy 120Sn implantation in n+GaAs by SUKHATANKARA, K. V, BELEKAR, M. M, NARSALE, A. M, NAIR, Geeta, ARORA, B. M

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Annealing effects on electrical characteristics of 100 MeV super(28)Si implantation in GaAs by Narsale, A M, Damle, A R, Ali, Yousuf P, Kanjilal, D, Arora, B M, Shah, AP, Lokhre, S G, Salvi, V P

“…Electrical characteristics of single crystal 100 orientation n-GaAs substrates implanted at room temperature with 100 MeV super(28)Si ions to a dose of 1 10…”
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Annealing effects on electrical characteristics of 100 MeV 28Si implantation in GaAs by Narsale, A M, Damle, A R, Ali, Yousuf P, Kanjilal, D, Arora, B M, Shah, A P, Lokhre, S G, Salvi, V P

“…Electrical characteristics of single crystal 100 orientation n-GaAs substrates implanted at room temperature with 100 MeV ^sup 28^Si ions to a dose of 1 ×…”
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Annealing effects on electrical characteristics of 100 MeV \+sp\28\-sp\Si implantation in GaAs by Narsale, A M, Damle |h A. R., Ali |h Y. P., Kanjilal |h D., Arora |h B. M., Shah |h A. P., Lokhre |h S. G., Salvi |h V. P.

“…Electrical characteristics of single crystal < 100 > orientation n-GaAs substrates implanted at room temperature with 100 MeV (super28)Si ions to a dose of 1 x…”
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