Search Results - "NANVER, Lis K"

X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor by Hrauda, Nina, Zhang, Jianjun, Wintersberger, Eugen, Etzelstorfer, Tanja, Mandl, Bernhard, Stangl, Julian, Carbone, Dina, Holý, Vaclav, Jovanović, Vladimir, Biasotto, Cleber, Nanver, Lis K, Moers, Jürgen, Grützmacher, Detlev, Bauer, Günther

“…For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain…”
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Random Telegraph Signal Phenomena in Ultra Shallow p+n Silicon Avalanche Diodes by Agarwal, Vishal, Annema, Anne-Johan, Dutta, Satadal, Hueting, Raymond J. E., Nanver, Lis K., Nauta, Bram

“…An extensive time domain analysis of the random telegraph signal (RTS) phenomena in silicon avalanche diodes is presented. Experiments show two distinct types…”
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Silicon Drift Detectors with the Drift Field Induced by PureB-Coated Trenches by Knežević, Tihomir, Nanver, Lis, Suligoj, Tomislav

“…Junction formation in deep trenches is proposed as a new means of creating a built-in drift field in silicon drift detectors (SDDs). The potential performance…”
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Limits on Thinning of Boron Layers With/Without Metal Contacting in PureB Si (Photo)Diodes by Knezevic, Tihomir, Liu, Xingyu, Hardeveld, Erwin, Suligoj, Tomislav, Nanver, Lis K.

“…A little more than a monolayer-thick pure-boron (PureB) layer was deposited on silicon at 250 °C by chemical vapor deposition (CVD), forming junctions with low…”
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Low-Temperature Electrical Performance of PureB Photodiodes Revealing Al-Metallization-Related Degradation of Dark Currents by Knezevic, Tihomir, Suligoj, Tomislav, Capan, Ivana, Nanver, Lis K.

“…Pure boron (PureB) deposition as the anode region of Si photodiodes creates negative fixed charge at the boron/silicon interface, which is responsible for…”
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Broadband PureB Ge-on-Si Photodiodes by Nanver, Lis K., Hassan, Vinayak V., Attariabad, Asma, Rosson, Nicholas, Arena, Chantal J.

“…Broadband PureB Ge-on-Si photodiodes were fabricated by in-situ capping of n-type Ge-islands grown by chemical-vapor deposition on Si with a 10-nm-thick pure…”
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Optoelectrical Operation Stability of Broadband PureGaB Ge-on-Si Photodiodes with Anomalous Al-Mediated Sidewall Contacting by Krakers, Max, Knežević, Tihomir, Nanver, Lis K.

“…An anomalous aluminum-mediated material transport process was investigated in sets of Ge-on-Si photodiodes with broadband optoelectrical characteristics…”
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Identifying nano-Schottky diode currents in silicon diodes with 2D interfacial layers by Knezevic, Tihomir, Nanver, Lis K

“…In silicon technology, Schottky diodes mainly exhibit high current levels, and attempts are regularly made to reduce these by introducing 2D layers between the…”
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Nanometer-thin pure boron CVD layers as material barrier to Au or Cu metallization of Si by Shivakumar, D. Thammaiah, Knežević, Tihomir, Nanver, Lis K.

“…Metallization layers of aluminum, gold, or copper are shown to be protected from interactions with silicon substrates by thin boron layers grown by…”
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CMOS-Compatible PureGaB Ge-on-Si APD Pixel Arrays by Sammak, Amir, Aminian, Mahdi, Nanver, Lis K., Charbon, Edoardo

“…Pure gallium and pure boron (PureGaB) Ge-on-Si photodiodes were fabricated in a CMOS compatible process and operated in linear and avalanche mode. Three…”
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On the Mechanisms Governing Aluminum-Mediated Solid-Phase Epitaxy of Silicon by Civale, Yann, Vastola, Guglielmo, Nanver, Lis K., Mary-Joy, Rani, Kim, Jae-Ryoung

“…Mechanisms governing the aluminum-mediated solid-phase epitaxy of Si on patterned crystalline Si substrates have been identified by studying the deposited…”
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Arsenic-Doped High-Resistivity-Silicon Epitaxial Layers for Integrating Low-Capacitance Diodes by Sakic, Agata, Scholtes, Tom L M, Boer, Wiebe de, Golshani, Negin, Derakhshandeh, Jaber, Nanver, Lis K

“…An arsenic doping technique for depositing up to 40-μm-thick high-resistivity layers is presented for fabricating diodes with low RC constants that can be…”
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Nanometer-Thin Pure Boron Layers as Mask for Silicon Micromachining by Xingyu Liu, Nanver, Lis K., Scholtes, Tom L. M.

“…The properties of nanometer-thin pure boron layers deposited by chemical vapor deposition were investigated for use as a barrier against tetramethyl ammonium…”
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UV-Sensitive Low Dark-Count PureB Single-Photon Avalanche Diode by Lin Qi, Mok, K. R. C., Aminian, Mahdi, Charbon, Edoardo, Nanver, Lis K.

“…A single-photon avalanche diode with high sensitivity in the ultraviolet (UV) wavelength range has been fabricated on Si using pure boron chemical vapor…”
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Robust UV/VUV/EUV PureB Photodiode Detector Technology With High CMOS Compatibility by Nanver, Lis K., Lin Qi, Mohammadi, Vahid, Mok, K. R. M., de Boer, Wiebe B., Golshani, Negin, Sammak, Amir, Scholtes, Thomas L. M., Gottwald, Alexander, Kroth, Udo, Scholze, Frank

“…This paper gives an assessment of old and new data relevant to the optical and electrical performance of PureB photodiodes for application in the wavelength…”
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Data Transmission Capabilities of Silicon Avalanche Mode Light-Emitting Diodes by Agarwal, Vishal, Annema, Anne-Johan, Hueting, Raymond J.E., Dutta, Satadal, Nanver, Lis K., Nauta, Bram

“…The data transmission capabilities of silicon avalanche mode light-emitting diodes (AMLEDs) were investigated, and the results are correlated with the…”
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Chemical Vapor Deposition of α-Boron Layers on Silicon for Controlled Nanometer-Deep p+n Junction Formation by Sarubbi, Francesco, Scholtes, Tom L. M., Nanver, Lis K.

“…Nanometer-thick amorphous boron ( α -B) layers were formed on (100) Si during exposure to diborane (B 2 H 6 ) in a chemical vapor deposition (CVD) system,…”
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Indirect optical crosstalk reduction by highly-doped backside layer in single-photon avalanche diode arrays by Osrečki, Željko, Knežević, Tihomir, Nanver, Lis K., Suligoj, Tomislav

“…A method of reducing indirect optical crosstalk in single-photon avalanche diode arrays is investigated by TCAD simulations. The reduction is accomplished by…”
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VUV/Low-Energy Electron Si Photodiodes With Postmetal 400 °C PureB Deposition by MOHAMMADI, Vahid, LIN QI, GOLSHANI, Negin, MOK, Caroline K. R, DE BOER, Wie Be, SAMMAK, Amir, DERAKHSHANDEH, Jaber, VAN DER CINGEL, Johan, NANVER, Lis K

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Ultra-high aspect-ratio FinFET technology by Jovanović, Vladimir, Suligoj, Tomislav, Poljak, Mirko, Civale, Yann, Nanver, Lis K.

“…FinFETs with ultra-large height-to-width ratio have been processed on (1 1 0) bulk silicon wafers by employing crystallographic etching of silicon with TMAH,…”
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