Search Results - "NAMI, Z"

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    Computer simulation study of the MOCVD growth of titanium dioxide films by Nami, Z., Misman, O., Erbil, A., May, G.S.

    Published in Journal of crystal growth (1997)
    “…The fluid dynamics of an inverted metalorganic chemical vapor deposition (MOCVD) reactor for the growth of TiO 2 films are studied. The coupled transport…”
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    Journal Article
  3. 3

    Semi-empirical neural network modeling of metal-organic chemical vapor deposition by Nami, Z., Misman, O., Erbil, A., May, G.S.

    “…Metal-organic chemical vapor deposition (MOCVD) is an important technique for growing thin films with various applications in electronics and optics. The…”
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    Journal Article Conference Proceeding
  4. 4

    Reactor design considerations for MOCVD growth of thin films by Nami, Z., Erbil, A., May, G.S.

    “…Metal-organic chemical vapor deposition (MOCVD) performance is optimized for growing titanium dioxide (TiO/sub 2/) thin films. Different gas flow directions…”
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    Journal Article Conference Proceeding
  5. 5

    Effect of growth parameters on TiO 2 thin films deposited using MOCVD by Nami, Z., Misman, O., Erbil, A., May, G.S.

    Published in Journal of crystal growth (1997)
    “…The goal of this paper is to characterize the performance of an inverted vertical MOCVD reactor used for the deposition of titanium dioxide thin films…”
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    Journal Article
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    A 0.18/spl mu/m CMOS fully integrated 6.25Gbps single aggressor multi-rate crosstalk cancellation IC for legacy backplane and interconnect applications by Bien, F., Raghavan, A., Nami, Z., Lee, C.-H., Kim, A., Vrazel, M., Gebara, E., Bajekal, S., Schmukler, B., Laskar, J.

    “…A multi-rate crosstalk canceller for active cancellation of near end cross talk (NEXT) caused by a single aggressor in a backplane channel environment has been…”
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    Conference Proceeding
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