Search Results - "Nützel, J"

Electrostatically defined quantum dots in a Si/SiGe heterostructure by Wild, A, Sailer, J, Nützel, J, Abstreiter, G, Ludwig, S, Bougeard, D

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Photoluminescence study of the crossover from two-dimensional to three-dimensional growth for Ge on Si(100) by Schittenhelm, P., Gail, M., Brunner, J., Nützel, J. F., Abstreiter, G.

“…Narrow Ge layers embedded in Si are investigated using photoluminescence (PL) spectroscopy. With increasing layer thickness a growth mode changeover from…”
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Phosphorous doping in low temperature silicon molecular beam epitaxy by FRIESS, E, NÜTZEL, J, ABSTREITER, G

“…Phosphorus doping with silicon molecular beam epitaxy was studied using a novel design of a solid doping source based on evaporation of highly doped silicon…”
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Object nets for the design and verification of distributed and embedded applications by Nützel, Jürgen, Däne, Bernd, Fengler, Wolfgang

“…In this paper we present an object-oriented method for the design, verification and implementation of embedded and distributed systems. The method is called…”
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Luminescence studies of confined excitons in pseudomorphic Si/SiGe quantum wells grown by solid source molecular beam epitaxy by Brunner, J., Nützel, J., Gail, M., Menczigar, U., Abstreiter, G.

“…Band gap luminescence from pseudomorphic Si/Si1−x Ge x /Si quantum wells grown by solid source molecular beam epitaxy is studied for a composition range from…”
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Electroluminescence of erbium–oxygen-doped silicon diodes grown by molecular beam epitaxy by Stimmer, J., Reittinger, A., Nützel, J. F., Abstreiter, G., Holzbrecher, H., Buchal, Ch

“…We have fabricated erbium–oxygen-doped silicon light emitting diodes with molecular beam epitaxy by simultaneously evaporating erbium and silicon and providing…”
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Growth and properties of high-mobility two-dimensional hole gases in Ge on relaxed Si/SiGe, Ge/SiGe buffers and Ge substrates by Nützel, J.F., Engelhardt, C.M., Wiesner, R., Többen, D., Holzmann, M., Abstreiter, G.

“…High-mobility two-dimensional hole channels were grown pseudomorphically on Ge substrates and strained on relaxed graded buffers both on Si and for the first…”
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Second-harmonic generation in asymmetric Si/SiGe quantum wells by Seto, M., Helm, M., Moussa, Z., Boucaud, P., Julien, F. H., Lourtioz, J.-M., Nützel, J. F., Abstreiter, G.

“…The observation of infrared second-harmonic generation in asymmetric Si/SiGe p-doped quantum wells is reported. The generated signal stems entirely from…”
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Hole energy levels and intersubband absorption in modulation-doped Si/Si1-xGex multiple quantum wells by Fromherz, T, Koppensteiner, E, Helm, M, Bauer, G, Nützel, JF, Abstreiter, G

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Transverse magnetic and transverse electric polarized inter-subband absorption and photoconductivity in p -type SiGe quantum wells by Fromherz, T., Kruck, P., Helm, M., Bauer, G., Nützel, J. F., Abstreiter, G.

“…We have investigated the polarization dependence of subband absorption and photoconductivity in Si/SiGe quantum wells. For samples with a hole concentration of…”
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Si/Si1−xGex multiquantum wells: A route to infrared detectors by Fromherz, T., Nützel, J.F., Hertle, H., Helm, M., Bauer, G., Abstreiter, G.

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Medium-wavelength, normal-incidence, p -type Si/SiGe quantum well infrared photodetector with background limited performance up to 85 K by Kruck, P., Helm, M., Fromherz, T., Bauer, G., Nützel, J. F., Abstreiter, G.

“…The detector characteristics of a pseudomorphic p-type Si0.64Ge0.36/Si quantum well infrared photodetector are reported. The device exhibits a photoresponse…”
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Segregation of n-dopants on SiGe surfaces by Nützel, J.F., Holzmann, M., Schittenhelm, P., Abstreiter, G.

“…We have investigated the surface segregation of phosphorus in comparison to antimony on Si and SiGe(001) in molecular beam epitaxy. The segregation was…”
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RHEED investigations of surface diffusion on Si(001) by Nützel, J.F., Brichzin, P., Abstreiter, G.

“…We have performed RHEED measurements over a wide range of growth temperatures and rates on Si(001) substrates. The measurements of the equilibrium intensity,…”
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Segregation and diffusion on semiconductor surfaces by Nützel, JF, Abstreiter, G

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Room temperature electroluminescence of Er-implanted silicon diodes grown by MBE by Jaumann, M., Stimmer, J., Schittenhelm, P., Nützel, J.F., Abstreiter, G., Neufeld, E., Holländer, B., Buchal, Ch

“…We investigated the room temperature electroluminescence of Er doped silicon diodes codoped with O or F as a function of dopant concentration and annealing…”
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Potato System and signed media format - an alternative approach to online music business by Nutzel, J., Grimm, R.

“…Thanks to modern compression techniques and increased bandwidth, the distribution of digital music via Internet has become affordable and easy. Many…”
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Development of real-time system specifications through the refinement of duration interval Petri nets by Gurovic, D., Fengler, W., Nutzel, J.

“…This paper aims at the development of an engineering technique for the construction of systems through the refinement of duration interval transitions. The…”
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Second-order susceptibilities related to valence-band transitions in asymmetric Si/SiGe quantum wells by Kruck, P, Seto, M, Helm, M, Moussa, Z, Boucaud, P, Julien, F H, Lourtioz, J-M, Nutzel, J F, Abstreiter, G

“…The observation of second-harmonic generation in compositionally stepped p-type Si/SiGe multiple quantum wells is reported. The second-order nonlinear…”
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Fabrication of n - and p -channel in-plane-gate transistors from Si/SiGe/Ge heterostructures by focused laser beam writing by Holzmann, M., Baumgartner, P., Engel, C., Nützel, J. F., Abstreiter, G., Schäffler, F.

“…Focused laser beam writing is applied for thermally activated diffusion of dopants into strained Si/Ge modulation-doped heterostructures. Lateral p- and n-type…”
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