Search Results - "Némoz, M."

Modeling Rare Species Distribution at the Edge : The Case for the Vulnerable Endemic Pyrenean Desman in France by Williams-Tripp, M., D'Amico, Frank, Pagé, C., Bertrand, A., Némoz, M., Brown, J. A.

“…The endemic Pyrenean Desman (Galemys pyrenaicus) is an elusive, rare, and vulnerable species declining over its entire and narrow range (Spain, Portugal,…”
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Biomechanical causes of trapeziometacarpal arthroplasty failure by Spartacus, V., Mayoly, A., Gay, A., Le Corroller, T., Némoz-Gaillard, M., Roffino, S., Chabrand, P.

“…Trapeziometacarpal joint prosthesis revision has been widely reported, mainly due to loosening of the trapezium cup. Our hypothesis is that current prostheses…”
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Evidence of fine-scale genetic structure for the endangered Pyrenean desman (Galemys pyrenaicus) in the French Pyrenees by Gillet, F., Garrido, M. T. Cabria, Blanc, F., Fournier-Chambrillon, C., Némoz, M., Sourp, E., Vial-Novella, C., Zardoya, R., Aulagnier, S., Michaux, J. R.

“…The Pyrenean desman (Galemys pyrenaicus) is a small, semiaquatic mammal endemic to the Pyrenean Mountains and the northern half of the Iberian Peninsula where…”
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Biomechanical analysis of the trapeziometacarpal arthroplasty failures by Spartacus, V., Mayoly, A., Gay, A., Le Corroller, T., Némoz-Gaillard, M., Roffino, S., Chabrand, P.

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Analysis of strain localization during tensile tests by digital image correlation by WATTRISSE, B, CHRYSOCHOOS, A, MURACCIOLE, J.-M, NEMOZ-GAILLARD, M

“…This paper presents an imaging technique developed to study the strain localization phenomena that occur during the tension of thin, flat steel samples. The…”
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Growth of semipolar (202̄1) GaN layers on patterned silicon (114) 1° off by Metal Organic Vapor Phase Epitaxy by Khoury, M., Leroux, M., Nemoz, M., Feuillet, G., Zúñiga-Pérez, J., Vennéguès, P.

“…With the objective of introducing further GaN semipolar orientations adequate for the fabrication of optoelectronic devices on silicon, we report on the…”
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Stacking faults blocking process in (1 1 −2 2) semipolar GaN growth on sapphire using asymmetric lateral epitaxy by Kriouche, N., Vennéguès, P., Nemoz, M., Nataf, G., De Mierry, P.

“…We have succeeded in effectively stopping the propagation of basal stacking faults in (1 1 −2 2) semipolar GaN films on sapphire using an original epitaxial…”
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High Al-content AlGaN channel high electron mobility transistors on silicon substrate by Mehta, J., Abid, I., Bassaler, J., Pernot, J., Ferrandis, P., Nemoz, M., Cordier, Y., Rennesson, S., Tamariz, S., Semond, F., Medjdoub, F.

“…The rapidly increasing power demand, downsizing of power electronics and material specific limitation of silicon has led to development of AlGaN/GaN…”
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Semipolar GaN films on patterned r -plane sapphire obtained by wet chemical etching by de Mierry, P., Kriouche, N., Nemoz, M., Chenot, S., Nataf, G.

“…It is shown that ( 11 2 ¯ 2 ) -oriented GaN films can be achieved from r -sapphire patterned by chemical etching. Growth first occurs selectively from the…”
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Improved semipolar ( 11 2 ¯ 2 ) GaN quality using asymmetric lateral epitaxy by de Mierry, P., Kriouche, N., Nemoz, M., Nataf, G.

“…Semipolar ( 11 2 ¯ 2 ) GaN films were obtained by epitaxial lateral overgrowth from ( 11 2 ¯ 2 ) GaN templates patterned with SiO 2 stripes 7   μ m wide with 3…”
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Growth of Ga- and N-polar GaN layers on O face ZnO substrates by molecular beam epitaxy by Xia, Y., Brault, J., Vennéguès, P., Nemoz, M., Teisseire, M., Leroux, M., Chauveau, J.-M.

“…Gallium nitride (GaN) epitaxial layers have been grown on O face (0001¯) zinc oxide (ZnO) substrates by ammonia source molecular beam epitaxy. By adjusting the…”
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Built-in electric field in ZnO based semipolar quantum wells grown on (101¯2) ZnO substrates by Chauveau, J.-M., Xia, Y., Ben Taazaet-Belgacem, I., Teisseire, M., Roland, B., Nemoz, M., Brault, J., Damilano, B., Leroux, M., Vinter, B.

“…We report on the properties of semipolar (Zn,Mg)O/ZnO quantum wells homoepitaxially grown by molecular beam epitaxy on (101¯2) R-plane ZnO substrates. We…”
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Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy by Cordier, Y., Moreno, J.-C., Baron, N., Frayssinet, E., Chauveau, J.-M., Nemoz, M., Chenot, S., Damilano, B., Semond, F.

“…The growth of GaN based structures on Si(1 1 0) substrates by molecular beam epitaxy using ammonia as the nitrogen precursor is reported. The structural,…”
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Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth by Kriouche, N, Leroux, M, Vennéguès, P, Nemoz, M, Nataf, G, de Mierry, P

“…Good-quality (11−22) semipolar GaN sample was obtained using epitaxial lateral overgrowth. The growth conditions were chosen to enhance the growth rate along…”
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Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth by Kriouche, N, Leroux, M, Vennéguès, P, Nemoz, M, Nataf, G, de Mierry, P

“…Good-quality (11−22) semipolar GaN sample was obtained using epitaxial lateral overgrowth. The growth conditions were chosen to enhance the growth rate along…”
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Multi-scale analysis of cartilage surface for trapeziometacarpal hemi-arthroplasty by V. Spartacus, R. Vargiolu, H. Zahouani, M. Nemoz-Gaillard, P. Chabrand

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Kinematic manifestations of localisation phenomena in steels by digital image correlation by Wattrisse, B., Chrysochoos, A., Muracciole, J.-M., Némoz-Gaillard, M.

“…The aim of this paper is to show that recent advances made in the field of speckle image processing give valuable information useful in understanding and…”
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Towards high buffer breakdown field and high temperature stability AlGaN channel HEMTs on silicon substrate by Mehta, J., Abid, I., Bassaler, J., Pernot, J., Ferrandis, P., Rennesson, S., Ngo, T. H., Nemoz, M., Tamariz, S., Cordier, Y., Semond, F., Medjdoub, F.

“…The rapidly increasing power demand, downsizing of power electronics and material specific performance limitation of silicon have led to the development of…”
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Epitaxial growth of AlGaN/GaN HEMTs on patterned Si substrate for high voltage power switching applications by Elwaradi, R., Frayssinet, E., Chenot, S., Bouyer, Y., Nemoz, M., Cordier, Y.

“…In this work, a series of AlGaN/GaN high electron mobility transistors (HEMTs) have been grown on patterned (Al)GaN-on-Si seed layers by metalorganic chemical…”
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Structural and Dielectric Properties of (BaTiO 3 /SrTiO 3 ) 15 Superlattices Grown by MOCVD by Dubourdieu, C., Pantou, R., Weiss, F., Sénateur, J. P., Dooryhee, E., Hodeau, J. L., Nemoz, M., Köbernik, G., Haessler, W.

“…(BaTiO 3 /SrTiO 3 ) 15 superlattices were grown by metal organicchemical vapor deposition (MOCVD) on oriented LaAlO 3 and Nb-doped SrTiO 3 substrates. The…”
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