Nonuniformity in the spatial distribution of negative luminescence in InAsSb

The spatial nonuniformity of negative luminescence and current crowding in InAsSb(P) mid-IR photodiodes is analyzed in relation to the applied voltage and contact size values. It is shown that this nonuniformity is one of the main causes of the poor sensitivity of photodiodes which have low dynamic...

Full description

Saved in:

Bibliographic Details
Published in:	Semiconductors (Woodbury, N.Y.) Vol. 46; no. 2; p. 247
Main Authors:	Karandashev, S.A, Matveev, B.A, Mzhelskii, I.V, Polovinkin, V.G, Remennyi, M.A, Rybalchenko, A. Yu, Stus, N.M
Format:	Journal Article
Language:	English
Published:	Springer 01-02-2012
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
Summary:	The spatial nonuniformity of negative luminescence and current crowding in InAsSb(P) mid-IR photodiodes is analyzed in relation to the applied voltage and contact size values. It is shown that this nonuniformity is one of the main causes of the poor sensitivity of photodiodes which have low dynamic resistance at zero bias and which operate in the photocurrent mode. DOI: 10.1134/S1063782612020157
ISSN:	1063-7826
DOI:	10.1134/S1063782612020157