Search Results - "Musha, J."

A 1Tb 3b/Cell 3D-Flash Memory of more than 17Gb/mm2 bit density with 3.2Gbps interface and 205MB/s program throughput by Sako, M., Nakajima, T., Kono, F., Nakano, T., Fujiu, M., Musha, J., Nakamura, D., Kanagawa, N., Shimizu, Y., Yanagidaira, K., Utsumi, T., Kawano, T., Hosomura, Y., Yabe, H., Kano, M., Sugawara, H., Sravan, A. H., Hayashi, K., Kouchi, T., Watanabe, Y.

“…A 210 + WL layers 1Tb 3b/cell 3D-Flash Memory achieves the high bit density of \gt17 Gb/mm 2 . Physical 8plane architecture realizes low read latency of 40us…”
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13.1 A 1.33Tb 4-bit/Cell 3D-Flash Memory on a 96-Word-Line-Layer Technology by Shibata, N., Kanda, K., Shimizu, T., Nakai, J., Nagao, O., Kobayashi, N., Miakashi, M., Nagadomi, Y., Nakano, T., Kawabe, T., Shibuya, T., Sako, M., Yanagidaira, K., Hashimoto, T., Date, H., Sato, M., Nakagawa, T., Takamoto, H., Musha, J., Minamoto, T., Uda, M., Nakamura, D., Sakurai, K., Yamashita, T., Zhou, J., Tachibana, R., Takagiwa, T., Sugimoto, T., Ogawa, M., Ochi, Y., Kawaguchi, K., Kojima, M., Ogawa, T., Hashiguchi, T., Fukuda, R., Masuda, M., Kawakami, K., Someya, T., Kajitani, Y., Matsumoto, Y., Morozumi, N., Sato, J., Raghunathan, N., Koh, Y. L., Chen, S., Lee, J., Nasu, H., Sugawara, H., Hosono, K., Hisada, T., Kaneko, T., Nakamura, H.

“…Since 3D-Flash memory took over for 2D-Flash memory, chip capacity has continuously improved [1]-[3]. In the 2D-Flash era, 2b/cell (MLC) offered higher…”
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A 151-mm ^ 64-Gb 2 Bit/Cell NAND Flash Memory in 24-nm CMOS Technology by Fukuda, K., Watanabe, Y., Makino, E., Kawakami, K., Sato, J., Takagiwa, T., Kanagawa, N., Shiga, H., Tokiwa, N., Shindo, Y., Ogawa, T., Edahiro, T., Iwai, M., Nagao, O., Musha, J., Minamoto, T., Furuta, Y., Yanagidaira, K., Suzuki, Y., Nakamura, D., Hosomura, Y., Tanaka, R., Komai, H., Muramoto, M., Shikata, G., Yuminaka, A., Sakurai, K., Sakai, M., Hong Ding, Watanabe, M., Kato, Y., Miwa, T., Mak, A., Nakamichi, M., Hemink, G., Lee, D., Higashitani, M., Murphy, B., Bo Lei, Matsunaga, Y., Naruke, K., Hara, T.

“…A 64-Gb MLC (2 bit/cell) NAND flash memory with the highest memory density to date as an MLC flash memory, has been successfully developed. To decrease the…”
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A 19nm 112.8mm2 64Gb multi-level flash memory with 400Mb/s/pin 1.8V Toggle Mode interface by Shibata, N., Kanda, K., Hisada, T., Isobe, K., Sato, M., Shimizu, Y., Shimizu, T., Sugimoto, T., Kobayashi, T., Inuzuka, K., Kanagawa, N., Kajitani, Y., Ogawa, T., Nakai, J., Iwasa, K., Kojima, M., Suzuki, T., Suzuki, Y., Sakai, S., Fujimura, T., Utsunomiya, Y., Hashimoto, T., Miakashi, M., Kobayashi, N., Inagaki, M., Matsumoto, Y., Inoue, S., He, D., Honda, Y., Musha, J., Nakagawa, M., Honma, M., Abiko, N., Koyanagi, M., Yoshihara, M., Ino, K., Noguchi, M., Kamei, T., Kato, Y., Zaitsu, S., Nasu, H., Ariki, T., Chibvongodze, H., Watanabe, M., Ding, H., Ookuma, N., Yamashita, R., Liang, G., Hemink, G., Moogat, F., Trinh, C., Higashitani, M., Pham, T., Kanazawa, K.

“…NAND flash memory is widely used in digital cameras, USB devices, cell phones, camcorders and solid-state drives. Continuous lowering of bit cost, increasing…”
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A 151mm2 64Gb MLC NAND flash memory in 24nm CMOS technology by Fukuda, K, Watanabe, Y, Makino, E, Kawakami, K, Sato, J, Takagiwa, T, Kanagawa, N, Shiga, H, Tokiwa, N, Shindo, Y, Edahiro, T, Ogawa, T, Iwai, M, Nagao, O, Musha, J, Minamoto, T, Yanagidaira, K, Suzuki, Y, Nakamura, D, Hosomura, Y, Komai, H, Furuta, Y, Muramoto, M, Tanaka, R, Shikata, G, Yuminaka, A, Sakurai, K, Sakai, M, Ding, H, Watanabe, M, Kato, Y, Miwa, T, Mak, A, Nakamichi, M, Hemink, G, Lee, D, Higashitani, M, Murphy, B, Lei, B, Matsunaga, Y, Naruke, K, Hara, T

“…NAND flash memories are now indispensable for our modern lives. The application range of the storage memory devices began with digital still cameras and has…”
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Laughing in the Ruined University: Disciplinarity, Deterritorialization, and Dissensus by Bouchard, Danielle, Musha, Julia, Parvulescu, Anca, Steigman, Karen

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