Search Results - "Musca, C A"

Design and Characterization of Fabry–Pérot MEMS-Based Short-Wave Infrared Microspectrometers by Keating, A.J., Antoszewski, J., Silva, K.K.M.B.D., Winchester, K.J., Nguyen, T., Dell, J.M., Musca, C.A., Faraone, L., Mitra, P., Beck, J.D., Skokan, M.R., Robinson, J.E.

“…Microspectrometers based on the monolithic integration of a microelectromechanical system (MEMS) Fabry–Pérot filter and a Hg x Cd 1– x Te-based infrared…”
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Investigation of 1/f noise mechanisms in midwave infrared HgCdTe gated photodiodes by WESTERHOUT, R. J, MUSCA, C. A, ANTOSZEWSKI, J, DELL, J. M, FARAONE, L

“…In this work, gated midwave infrared (MWIR) Hg^sub 1-x^Cd^sub x^ Te photodiodes are used to investigate the physical origin of 1/f noise generation. Gated…”
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Dark currents in long wavelength infrared HgCdTe gated photodiodes by NGUYEN, T, MUSCA, C. A, DELL, J. M, ANTOSZEWSKI, J, FARAONE, L

“…The fabrication of HgCdTe photodiodes using plasma-induced p-to-n type conversion for junction formation shows promise in improving array uniformity and device…”
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Optical characterization of Fabry-Perot MEMS filters integrated on tunable short-wave IR detectors by Keating, A J, Silva, KKMBD, Dell, J M, Musca, C A, Faraone, L

“…Optical characterization of a microspectrometer based on a voltage tunable Fabry-Perot microelectromechanical optical filter monolithically integrated on a…”
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Effect of high-density plasma process parameters on carrier transport properties in p-to-n type converted Hg0.7Cd0.3Te layer by PARK, B. A, MUSCA, C. A, ANTOSZEWSKI, J, DELL, J. M, FARAONE, L

“…Exposure of p-type HgCdTe material to Ar/H2-based plasma is known to result in p-to-n conductivity-type conversion. While this phenomenon is generally…”
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Monolithic integration of an infrared photon detector with a MEMS-based tunable filter by Musca, C.A., Antoszewski, J., Winchester, K.J., Keating, A.J., Nguyen, T., Silva, K.K.M.B.D., Dell, J.M., Faraone, L., Mitra, P., Beck, J.D., Skokan, M.R., Robinson, J.E.

“…The monolithic integration of a low-temperature microelectromechanical system (MEMS) and HgCdTe infrared detector technology has been implemented and…”
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On the bonding microstructure of amorphous silicon oxide thin films by Soh, Martin T.K., Savvides, N., Martin, P.J., Musca, C.A.

“…Amorphous silicon oxide thin films were deposited at 25 °C by thermal evaporation as a function of oxygen partial pressure (0–9×10−4 Pa). The optical…”
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Mercury cadmium telluride/cadmium telluride distributed Bragg reflectors for use with resonant cavity-enhanced detectors by WEHNER, J. G. A, SEWELL, R. H, ANTOSZEWSEI, J, MUSCA, C. A, DELL, J. M, FARAONE, L

“…A HgCdTe/CdTe system is investigated for use in distributed Bragg reflectors. The modeled performance is described and compared to an as-grown structure…”
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Magneto-transport characterization of p-type HgCdTe by TSEN, G. K. O, MUSCA, C. A, DELL, J. M, ANTOSZEWSKI, J, FARAONE, L

“…The electrical properties of semiconductor materials have conventionally been extracted via Hall measurements performed at a single magnetic field. When…”
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Small two-dimensional arrays of mid-wavelength infrared HgCdTe diodes fabricated by reactive ion etching-induced p-to-n-type conversion by ANTOSZEWSIII, J, MUSCA, C. A, DELL, J. M, FARAONE, L

“…The reactive ion etching (RIE) technique has been shown to produce high-performance n-on-p junctions by localized-type conversion of p-type mid-wavelength ir…”
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Diffusion length measurements in p-HgCdTe using laser beam induced current by REDFERN, D. A, THOMAS, J. A, MUSCA, C. A, DELL, J. M, FARAONE, L

“…The minority carrier diffusion length in p-HgCdTe is a key indicator of material quality and gives an indication of n-on-p diode performance when the zero bias…”
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HgCdTe long-wavelength infrared photovoltaic detectors fabricated using plasma-induced junction formation technology by NGUYEN, T, MUSCA, C. A, DELL, J. M, ANTOSZEWSKI, J, FARAONE, L

“…A long-wavelength infrared (LWIR) HgCdTe photodiode fabrication process has been developed based on reactive ion etching (RIE) plasma-induced p-to-n type…”
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High-resolution X-ray diffraction studies of molecular beam epitaxy-grown HgCdTe heterostructures and CdZnTe substrates by SEWELL, R. H, MUSCA, C. A, DELL, J. M, FARAONE, L, USHER, B. F, DIEING, T

“…Lattice mismatch between substrates and epitaxial layers of different mole-fractions can create a variety of distortions and defects in Hg^(sub 1-x)^Cd^sub…”
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Determination of HgCdTe elasto-plastic properties using nanoindentation by MARTYNIUK, M, SEWELL, R. H, MUSCA, C. A, DELL, J. M, FARAONE, L

“…Depth sensing indentation has been used to investigate the elasto-plastic behavior of Hg^sub 0.7^Cd^sub 0.3^Te prepared by molecular beam epitaxy, liquid phase…”
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A monolithically integrated HgCdTe short-wavelength infrared photodetector and micro-electro-mechanical systems-based optical filter by ANTOSZEWSEI, J, WINCHESTER, K. J, SKOKAN, M. R, ROBINSON, J. E, KEATING, A. J, NGUYEN, T, SILVA, K. K. M. B. D, MUSCA, C. A, DELL, J. M, FARAONE, L, MITRA, P, BECK, J. D

“…A monolithically integrated low-temperature micro-electro-mechanical systems (MEMS) and HgCdTe infrared (IR) detector technology is introduced, implemented,…”
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Correlation of laser-beam-induced current with current-voltage measurements in HgCdTe photodiodes by REDFERN, D. A, MUSCA, C. A, DELL, J. M, FARAONE, L

“…Laser-beam-induced current (LBIC) is being investigated as an alternative to electrical measurements of individual photodiodes in a two-dimensional array. This…”
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Transport properties of reactive-ion-etching-induced p-to-n type converted layers in HgCdTe by NGUYEN, T, ANTOSZEWSKI, J, MUSCA, C. A, REDFERN, D. A, DELL, J. M, FARAONE, L

“…In this work, the effect of the reactive ion etching (RIE)-induced p-to-n type conversion process on the transport properties of HgCdTe is investigated…”
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Optical and structural properties of CdTe grown by molecular beam epitaxy at low temperature for resonant-cavity-enhanced HgCdTe detectors by WEHNER, J. G. A, SEWELL, R. H, MUSCA, C. A, DELL, J. M, FARAONE, L

“…Investigation into resonant-cavity-enhanced (RCE) HgCdTe detectors has revealed a discrepancy in the refractive index of the CdTe layers grown by molecular…”
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Planar p-on-n HgCdTe heterojunction mid-wavelength infrared photodiodes formed using plasma-induced junction isolation by MUSCA, C. A, ANTOSZEWSKI, J, DELL, J. M, FARAONE, L, TERTERIAN, S

“…Planar p-on-n HgCdTe heterojunction photodiodes have been fabricated using a plasma-induced type conversion process for device junction isolation. The…”
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Resonant cavity-enhanced mercury cadmium telluride detectors by WEHNER, J. G. A, NGUYEN, T. N, ANTOSZEWSKI, J, MUSCA, C. A, DELL, J. M, FARAONE, L

“…The next-generation mercury cadmium telluride (HgCdTe) detectors will need to be able to spectrally resolve images to a degree far exceeding that currently…”
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