Search Results - "Musca, A"

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  1. 1

    Interpretation of current flow in photodiode structures using laser beam-induced current for characterization and diagnostics by Redfern, D.A., Smith, E.P.G., Musca, C.A., Dell, J.M., Faraone, L.

    Published in IEEE transactions on electron devices (01-01-2006)
    “…This paper presents an interpretation of the physical mechanisms involved in the generation of laser beam-induced current (LBIC) in semiconductor p-n junction…”
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    Journal Article
  2. 2

    Characterization of electrically active defects in photovoltaic detector arrays using laser beam-induced current by Redfern, D.A., Musca, C.A., Dell, J.M., Faraone, L.

    Published in IEEE transactions on electron devices (01-10-2005)
    “…One of the main limitations in the operability of modern infrared focal plane arrays of p-n junction diodes formed on molecular-beam epitaxy (MBE)-grown HgCdTe…”
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    Journal Article
  3. 3

    Design and Characterization of Fabry–Pérot MEMS-Based Short-Wave Infrared Microspectrometers by Keating, A.J., Antoszewski, J., Silva, K.K.M.B.D., Winchester, K.J., Nguyen, T., Dell, J.M., Musca, C.A., Faraone, L., Mitra, P., Beck, J.D., Skokan, M.R., Robinson, J.E.

    Published in Journal of electronic materials (01-12-2008)
    “…Microspectrometers based on the monolithic integration of a microelectromechanical system (MEMS) Fabry–Pérot filter and a Hg x Cd 1– x Te-based infrared…”
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    Journal Article
  4. 4

    Investigation of 1/f noise mechanisms in midwave infrared HgCdTe gated photodiodes by WESTERHOUT, R. J, MUSCA, C. A, ANTOSZEWSKI, J, DELL, J. M, FARAONE, L

    Published in Journal of electronic materials (01-08-2007)
    “…In this work, gated midwave infrared (MWIR) Hg^sub 1-x^Cd^sub x^ Te photodiodes are used to investigate the physical origin of 1/f noise generation. Gated…”
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    Conference Proceeding Journal Article
  5. 5

    Dark currents in long wavelength infrared HgCdTe gated photodiodes by NGUYEN, T, MUSCA, C. A, DELL, J. M, ANTOSZEWSKI, J, FARAONE, L

    Published in Journal of electronic materials (01-06-2004)
    “…The fabrication of HgCdTe photodiodes using plasma-induced p-to-n type conversion for junction formation shows promise in improving array uniformity and device…”
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    Conference Proceeding Journal Article
  6. 6

    Optical characterization of Fabry-Perot MEMS filters integrated on tunable short-wave IR detectors by Keating, A J, Silva, KKMBD, Dell, J M, Musca, C A, Faraone, L

    Published in IEEE photonics technology letters (01-05-2006)
    “…Optical characterization of a microspectrometer based on a voltage tunable Fabry-Perot microelectromechanical optical filter monolithically integrated on a…”
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    Journal Article
  7. 7

    Effect of high-density plasma process parameters on carrier transport properties in p-to-n type converted Hg0.7Cd0.3Te layer by PARK, B. A, MUSCA, C. A, ANTOSZEWSKI, J, DELL, J. M, FARAONE, L

    Published in Journal of electronic materials (01-08-2007)
    “…Exposure of p-type HgCdTe material to Ar/H2-based plasma is known to result in p-to-n conductivity-type conversion. While this phenomenon is generally…”
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    Conference Proceeding Journal Article
  8. 8

    Monolithic integration of an infrared photon detector with a MEMS-based tunable filter by Musca, C.A., Antoszewski, J., Winchester, K.J., Keating, A.J., Nguyen, T., Silva, K.K.M.B.D., Dell, J.M., Faraone, L., Mitra, P., Beck, J.D., Skokan, M.R., Robinson, J.E.

    Published in IEEE electron device letters (01-12-2005)
    “…The monolithic integration of a low-temperature microelectromechanical system (MEMS) and HgCdTe infrared detector technology has been implemented and…”
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    Journal Article
  9. 9

    On the bonding microstructure of amorphous silicon oxide thin films by Soh, Martin T.K., Savvides, N., Martin, P.J., Musca, C.A.

    Published in Thin solid films (05-12-2006)
    “…Amorphous silicon oxide thin films were deposited at 25 °C by thermal evaporation as a function of oxygen partial pressure (0–9×10−4 Pa). The optical…”
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    Journal Article
  10. 10
  11. 11

    Diffusion length measurements in p-HgCdTe using laser beam induced current by REDFERN, D. A, THOMAS, J. A, MUSCA, C. A, DELL, J. M, FARAONE, L

    Published in Journal of electronic materials (01-06-2001)
    “…The minority carrier diffusion length in p-HgCdTe is a key indicator of material quality and gives an indication of n-on-p diode performance when the zero bias…”
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    Conference Proceeding Journal Article
  12. 12

    Mercury cadmium telluride/cadmium telluride distributed Bragg reflectors for use with resonant cavity-enhanced detectors by WEHNER, J. G. A, SEWELL, R. H, ANTOSZEWSEI, J, MUSCA, C. A, DELL, J. M, FARAONE, L

    Published in Journal of electronic materials (01-06-2005)
    “…A HgCdTe/CdTe system is investigated for use in distributed Bragg reflectors. The modeled performance is described and compared to an as-grown structure…”
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    Conference Proceeding Journal Article
  13. 13

    Magneto-transport characterization of p-type HgCdTe by TSEN, G. K. O, MUSCA, C. A, DELL, J. M, ANTOSZEWSKI, J, FARAONE, L

    Published in Journal of electronic materials (01-08-2007)
    “…The electrical properties of semiconductor materials have conventionally been extracted via Hall measurements performed at a single magnetic field. When…”
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    Conference Proceeding Journal Article
  14. 14

    Evaluation of plasma deposited silicon nitride thin films for microsystems technology by Soh, M.T.K., Musca, C.A., Savvides, N., Dell, J.M., Faraone, L.

    Published in Journal of microelectromechanical systems (01-10-2005)
    “…Plasma deposited silicon nitride thin films were deposited at temperatures between 150/spl deg/C and 300/spl deg/C. Diagnostic microstructures were fabricated…”
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    Journal Article
  15. 15

    Small two-dimensional arrays of mid-wavelength infrared HgCdTe diodes fabricated by reactive ion etching-induced p-to-n-type conversion by ANTOSZEWSIII, J, MUSCA, C. A, DELL, J. M, FARAONE, L

    Published in Journal of electronic materials (01-07-2003)
    “…The reactive ion etching (RIE) technique has been shown to produce high-performance n-on-p junctions by localized-type conversion of p-type mid-wavelength ir…”
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    Conference Proceeding Journal Article
  16. 16

    HgCdTe long-wavelength infrared photovoltaic detectors fabricated using plasma-induced junction formation technology by NGUYEN, T, MUSCA, C. A, DELL, J. M, ANTOSZEWSKI, J, FARAONE, L

    Published in Journal of electronic materials (01-07-2003)
    “…A long-wavelength infrared (LWIR) HgCdTe photodiode fabrication process has been developed based on reactive ion etching (RIE) plasma-induced p-to-n type…”
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    Conference Proceeding Journal Article
  17. 17

    High-resolution X-ray diffraction studies of molecular beam epitaxy-grown HgCdTe heterostructures and CdZnTe substrates by SEWELL, R. H, MUSCA, C. A, DELL, J. M, FARAONE, L, USHER, B. F, DIEING, T

    Published in Journal of electronic materials (01-06-2005)
    “…Lattice mismatch between substrates and epitaxial layers of different mole-fractions can create a variety of distortions and defects in Hg^(sub 1-x)^Cd^sub…”
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    Conference Proceeding Journal Article
  18. 18

    Determination of HgCdTe elasto-plastic properties using nanoindentation by MARTYNIUK, M, SEWELL, R. H, MUSCA, C. A, DELL, J. M, FARAONE, L

    Published in Journal of electronic materials (01-06-2006)
    “…Depth sensing indentation has been used to investigate the elasto-plastic behavior of Hg^sub 0.7^Cd^sub 0.3^Te prepared by molecular beam epitaxy, liquid phase…”
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    Conference Proceeding Journal Article
  19. 19

    Hydrogenation of ZnS passivation on narrow-band gap HgCdTe by White, J. K., Musca, C. A., Lee, H. C., Faraone, L.

    Published in Applied physics letters (24-04-2000)
    “…Due to the narrow band gap of HgCdTe required for infrared photodetectors, the device performance is readily influenced by surface effects. This letter…”
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    Journal Article
  20. 20

    A monolithically integrated HgCdTe short-wavelength infrared photodetector and micro-electro-mechanical systems-based optical filter by ANTOSZEWSEI, J, WINCHESTER, K. J, SKOKAN, M. R, ROBINSON, J. E, KEATING, A. J, NGUYEN, T, SILVA, K. K. M. B. D, MUSCA, C. A, DELL, J. M, FARAONE, L, MITRA, P, BECK, J. D

    Published in Journal of electronic materials (01-06-2005)
    “…A monolithically integrated low-temperature micro-electro-mechanical systems (MEMS) and HgCdTe infrared (IR) detector technology is introduced, implemented,…”
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    Conference Proceeding Journal Article