Search Results - "Musca, A"
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1
Interpretation of current flow in photodiode structures using laser beam-induced current for characterization and diagnostics
Published in IEEE transactions on electron devices (01-01-2006)“…This paper presents an interpretation of the physical mechanisms involved in the generation of laser beam-induced current (LBIC) in semiconductor p-n junction…”
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2
Characterization of electrically active defects in photovoltaic detector arrays using laser beam-induced current
Published in IEEE transactions on electron devices (01-10-2005)“…One of the main limitations in the operability of modern infrared focal plane arrays of p-n junction diodes formed on molecular-beam epitaxy (MBE)-grown HgCdTe…”
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3
Design and Characterization of Fabry–Pérot MEMS-Based Short-Wave Infrared Microspectrometers
Published in Journal of electronic materials (01-12-2008)“…Microspectrometers based on the monolithic integration of a microelectromechanical system (MEMS) Fabry–Pérot filter and a Hg x Cd 1– x Te-based infrared…”
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4
Investigation of 1/f noise mechanisms in midwave infrared HgCdTe gated photodiodes
Published in Journal of electronic materials (01-08-2007)“…In this work, gated midwave infrared (MWIR) Hg^sub 1-x^Cd^sub x^ Te photodiodes are used to investigate the physical origin of 1/f noise generation. Gated…”
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5
Dark currents in long wavelength infrared HgCdTe gated photodiodes
Published in Journal of electronic materials (01-06-2004)“…The fabrication of HgCdTe photodiodes using plasma-induced p-to-n type conversion for junction formation shows promise in improving array uniformity and device…”
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Conference Proceeding Journal Article -
6
Optical characterization of Fabry-Perot MEMS filters integrated on tunable short-wave IR detectors
Published in IEEE photonics technology letters (01-05-2006)“…Optical characterization of a microspectrometer based on a voltage tunable Fabry-Perot microelectromechanical optical filter monolithically integrated on a…”
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7
Effect of high-density plasma process parameters on carrier transport properties in p-to-n type converted Hg0.7Cd0.3Te layer
Published in Journal of electronic materials (01-08-2007)“…Exposure of p-type HgCdTe material to Ar/H2-based plasma is known to result in p-to-n conductivity-type conversion. While this phenomenon is generally…”
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Conference Proceeding Journal Article -
8
Monolithic integration of an infrared photon detector with a MEMS-based tunable filter
Published in IEEE electron device letters (01-12-2005)“…The monolithic integration of a low-temperature microelectromechanical system (MEMS) and HgCdTe infrared detector technology has been implemented and…”
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9
On the bonding microstructure of amorphous silicon oxide thin films
Published in Thin solid films (05-12-2006)“…Amorphous silicon oxide thin films were deposited at 25 °C by thermal evaporation as a function of oxygen partial pressure (0–9×10−4 Pa). The optical…”
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10
Diastolic function abnormalities in rheumatoid arthritis. Evaluation by echo Doppler transmitral flow and pulmonary venous flow: relation with duration of disease
Published in Annals of the rheumatic diseases (01-03-2000)“…OBJECTIVE The aim of this study was to evaluate left ventricular filling in patients with rheumatoid arthritis (RA), analysing transmitral flow and pulmonary…”
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11
Diffusion length measurements in p-HgCdTe using laser beam induced current
Published in Journal of electronic materials (01-06-2001)“…The minority carrier diffusion length in p-HgCdTe is a key indicator of material quality and gives an indication of n-on-p diode performance when the zero bias…”
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12
Mercury cadmium telluride/cadmium telluride distributed Bragg reflectors for use with resonant cavity-enhanced detectors
Published in Journal of electronic materials (01-06-2005)“…A HgCdTe/CdTe system is investigated for use in distributed Bragg reflectors. The modeled performance is described and compared to an as-grown structure…”
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13
Magneto-transport characterization of p-type HgCdTe
Published in Journal of electronic materials (01-08-2007)“…The electrical properties of semiconductor materials have conventionally been extracted via Hall measurements performed at a single magnetic field. When…”
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14
Evaluation of plasma deposited silicon nitride thin films for microsystems technology
Published in Journal of microelectromechanical systems (01-10-2005)“…Plasma deposited silicon nitride thin films were deposited at temperatures between 150/spl deg/C and 300/spl deg/C. Diagnostic microstructures were fabricated…”
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15
Small two-dimensional arrays of mid-wavelength infrared HgCdTe diodes fabricated by reactive ion etching-induced p-to-n-type conversion
Published in Journal of electronic materials (01-07-2003)“…The reactive ion etching (RIE) technique has been shown to produce high-performance n-on-p junctions by localized-type conversion of p-type mid-wavelength ir…”
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16
HgCdTe long-wavelength infrared photovoltaic detectors fabricated using plasma-induced junction formation technology
Published in Journal of electronic materials (01-07-2003)“…A long-wavelength infrared (LWIR) HgCdTe photodiode fabrication process has been developed based on reactive ion etching (RIE) plasma-induced p-to-n type…”
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17
High-resolution X-ray diffraction studies of molecular beam epitaxy-grown HgCdTe heterostructures and CdZnTe substrates
Published in Journal of electronic materials (01-06-2005)“…Lattice mismatch between substrates and epitaxial layers of different mole-fractions can create a variety of distortions and defects in Hg^(sub 1-x)^Cd^sub…”
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18
Determination of HgCdTe elasto-plastic properties using nanoindentation
Published in Journal of electronic materials (01-06-2006)“…Depth sensing indentation has been used to investigate the elasto-plastic behavior of Hg^sub 0.7^Cd^sub 0.3^Te prepared by molecular beam epitaxy, liquid phase…”
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19
Hydrogenation of ZnS passivation on narrow-band gap HgCdTe
Published in Applied physics letters (24-04-2000)“…Due to the narrow band gap of HgCdTe required for infrared photodetectors, the device performance is readily influenced by surface effects. This letter…”
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20
A monolithically integrated HgCdTe short-wavelength infrared photodetector and micro-electro-mechanical systems-based optical filter
Published in Journal of electronic materials (01-06-2005)“…A monolithically integrated low-temperature micro-electro-mechanical systems (MEMS) and HgCdTe infrared (IR) detector technology is introduced, implemented,…”
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Conference Proceeding Journal Article