Arsenic atomic layer doping in Si using AsH3

Arsenic atomic layer doping in Si using AsH3

Results of arsenic atomic layer doping in Si (100) are presented in this study. Arsenic adsorption and segregation behavior on the Si(100) surface are also discussed. SIMS and four-point probe methods are used for As profile and dosage measurements.

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Bibliographic Details
Published in:2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) pp. 33 - 34
Main Authors: Yamamoto, Yuji, Kurps, Rainer, Murota, Juichi, Tillack, Bernd
Format: Conference Proceeding
Language:English
Published: IEEE 01-06-2014
Subjects:
Adsorption
Ash
Atomic layer deposition
Doping
Process control
Silicon
Surface treatment
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Description
Summary:Results of arsenic atomic layer doping in Si (100) are presented in this study. Arsenic adsorption and segregation behavior on the Si(100) surface are also discussed. SIMS and four-point probe methods are used for As profile and dosage measurements.
ISBN:9781479954278
1479954276
DOI:10.1109/ISTDM.2014.6874638