Search Results - "Murley, P.C."
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A field-funneling effect on the collection of alpha-particle-generated carriers in silicon devices
Published in IEEE electron device letters (01-04-1981)“…We studied the transient characteristics of charge collection from alpha-particle tracks in silicon devices. We have run computer calculations using the finite…”
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Collection of charge from alpha-particle tracks in silicon devices
Published in IEEE transactions on electron devices (01-06-1983)“…Experimentally and by computer simulation, we have investigated the collection process of alpha-particle-generated charge in silicon devices. We studied the…”
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Parameter-free, predictive modeling of single event upsets due to protons, neutrons, and pions in terrestrial cosmic rays
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) (01-12-1994)“…In this paper we present a new approach and a computer software for modeling single event upsets. This model, named Soft Error Monte Carlo Model (SEMM), does…”
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Journal Article Conference Proceeding -
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Comments on "Two-dimensional numerical analysis of impurity atom diffusion in semiconductors"
Published in IEEE transactions on electron devices (01-07-1984)Get full text
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Accurate, predictive modeling of soft error rate due to cosmic rays and chip alpha radiation
Published in Proceedings of 1994 IEEE International Reliability Physics Symposium (1994)“…We report here the development of a unique and comprehensive computer program (SEMM) to calculate the probability of soft fails in integrated circuits due to…”
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Conference Proceeding -
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Impurity atom distribution from a two-step diffusion process
Published in Proceedings of the IEEE (1964)Get full text
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Concentration dependent diffusion of arsenic in silicon
Published in Proceedings of the IEEE (01-01-1971)“…Boltzmann-Matano analysis techniques have been applied to experimentally measured impurity atom distributions arising from arsenic diffusion into silicon…”
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Minority carrier injection characteristics of the diffused emitter junction
Published in I.R.E. transactions on electron devices (01-03-1962)“…For the double-diffused transistor, a one-dimensional analysis is presented on the minority carrier injection properties of a diffused emitter junction. This…”
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Impurity atom diffusion into finite slices of semiconductor material
Published in Proceedings of the IEEE (01-01-1963)Get full text
Journal Article