Search Results - "Murley, P.C."

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  1. 1

    A field-funneling effect on the collection of alpha-particle-generated carriers in silicon devices by Hsieh, C.M., Murley, P.C., O'Brien, R.R.

    Published in IEEE electron device letters (01-04-1981)
    “…We studied the transient characteristics of charge collection from alpha-particle tracks in silicon devices. We have run computer calculations using the finite…”
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    Journal Article
  2. 2

    Collection of charge from alpha-particle tracks in silicon devices by Chang-Ming Hsieh, Murley, P.C., O'Brien, R.R.

    Published in IEEE transactions on electron devices (01-06-1983)
    “…Experimentally and by computer simulation, we have investigated the collection process of alpha-particle-generated charge in silicon devices. We studied the…”
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    Journal Article
  3. 3

    Parameter-free, predictive modeling of single event upsets due to protons, neutrons, and pions in terrestrial cosmic rays by Srinivasan, G.R., Tang, H.K., Murley, P.C.

    “…In this paper we present a new approach and a computer software for modeling single event upsets. This model, named Soft Error Monte Carlo Model (SEMM), does…”
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    Journal Article Conference Proceeding
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    Accurate, predictive modeling of soft error rate due to cosmic rays and chip alpha radiation by Srinivasan, G.R., Murley, P.C., Tang, H.K.

    “…We report here the development of a unique and comprehensive computer program (SEMM) to calculate the probability of soft fails in integrated circuits due to…”
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    Conference Proceeding
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    Concentration dependent diffusion of arsenic in silicon by Kennedy, D.P., Murley, P.C.

    Published in Proceedings of the IEEE (01-01-1971)
    “…Boltzmann-Matano analysis techniques have been applied to experimentally measured impurity atom distributions arising from arsenic diffusion into silicon…”
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    Journal Article
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    Minority carrier injection characteristics of the diffused emitter junction by Kennedy, D.P., Murley, P.C.

    Published in I.R.E. transactions on electron devices (01-03-1962)
    “…For the double-diffused transistor, a one-dimensional analysis is presented on the minority carrier injection properties of a diffused emitter junction. This…”
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    Journal Article
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