Search Results - "Murel, A. V."

Simulation of the Electron Transport in a Mott Diode by the Monte Carlo Method by Obolensky, S. V., Murel, A. V., Vostokov, N. V., Shashkin, V. I.

“…The electron-transport processes in a low-barrier Mott diode are studied by the methods of numerical simulation. The effects related to the quasi-ballistic…”
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Current-voltage characteristics of a metal-semiconductor contact with a Mott barrier by Shashkin, V. I., Murel’, A. V.

“…An analytical solution for the current-voltage characteristics of a metal-semiconductor contact with a Mott barrier is derived with allowance made for the…”
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Diagnostics of low-barrier Schottky diodes with near-surface δ-doping by Shashkin, V. I., Murel’, A. V.

“…To find the parameters of low-barrier Schottky diodes, a diagnostics technique based on an analysis of the dependence of the differential resistance of a diode…”
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Photoluminescence up to 1.6 μm of quantum dots with an increased effective thickness of the InAs layer by Drozdov, M. N., Vostokov, N. V., Danil’tsev, V. M., Drozdov, Yu. N., Moldavskaya, L. D., Murel’, A. V., Shashkin, V. I.

“…Multilayered InAs/GaAs quantum dot (QD) heterostructures are produced by metal-organic gas phase epitaxy. The structures exhibit photoluminescence around 1.55…”
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Effect of B atoms on the properties of InAs quantum dots in the GaAs matrix by Danil’tsev, V. M., Vostokov, N. V., Drozdov, Yu. N., Drozdov, M. N., Murel’, A. V., Pryakhin, D. A., Khrykin, O. I., Shashkin, V. I.

“…The effect of B dopants on the properties of InAs quantum dots is studied experimentally. It is shown that the incorporation of B atoms decreases the integral…”
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Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy by Murel, A. V., Shmagin, V. B., Krukov, V. L., Strelchenko, S. S., Surovegina, E. A., Shashkin, V. I.

“…Three deep acceptor levels with activation energies of ~0.7, ~0.41, and ~0.16 eV are found in GaAs structures, which have the hole type of conductivity and are…”
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Planar detectors for multielement systems of millimeter-wave imaging by Shashkin, V. I., Dryagin, Yu. A., Zakamov, V. R., Krivov, S. V., Kukin, L. M., Murel’, A. V., Chechenin, Yu. I.

“…We discuss the concept of developing a millimeter-wave multielement matrix receiver on the basis of planar antennas with directly coupled low-barrier Schottky…”
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Optimization of the temperature mode of metal-organic chemical vapor deposition of the InAs(N) quantum dots on GaAs (001) with intense photoluminescence at 1.3 μm by Shashkin, V. I., Danil’tsev, V. M., Drozdov, M. N., Drozdov, Yu. N., Gaponova, D. M., Khrykin, O. I., Murel’, A. V., Vostokov, N. V., Kim, Taek, Park, Yong-Jo

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Determining the structural parameters of a low-barrier diode with near-surface δ-doping from data on the temperature dependences of the current-voltage characteristics by Murel’, A. V., Shashkin, V. I.

“…A technique for determining the structural parameters of low-barrier metal-semiconductor junctions, the tunnel-transparent barrier of which is formed by…”
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Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron” by Surovegina, E. A., Demidov, E. V., Drozdov, M. N., Murel, A. V., Khrykin, O. I., Shashkin, V. I., Lobaev, M. A., Gorbachev, A. M., Viharev, A. L., Bogdanov, S. A., Isaev, V. A., Muchnikov, A. B., Chernov, V. V., Radishchev, D. B., Batler, J. E.

“…The name of the last author should read J. E. Batler …”
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Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron by Surovegina, E. A., Demidov, E. V., Drozdov, M. N., Murel, A. V., Khrykin, O. I., Shashkin, V. I., Lobaev, M. A., Gorbachev, A. M., Viharev, A. L., Bogdanov, S. A., Isaev, V. A., Muchnikov, A. B., Chernov, V. V., Radishchev, D. B., Batler, D. E.

“…The results of analysis of the atomic composition, doping level, and hole mobility in epitaxial diamond layers when doped with boron are reported. The layers…”
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A generalized theory of charge transport in low-barrier Mott diodes with near-surface δ-doping: Comparison with experimental data by Shashkin, V. I., Murel’, A. V.

“…An analytical generalized model for the charge transport in low-barrier Mott detector diodes with near-surface δ-doping is formulated. The model takes into…”
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Properties of Mott contacts with an ultralow metal-semiconductor barrier by Shashkin, V. I., Murel’, A. V.

“…The current-voltage and capacitance characteristics of Mott contacts with an ultralow metal-semiconductor barrier are investigated. The analysis is based on…”
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Method of selective doping of silicon by segregating impurities by Yurasov, D. V., Drozdov, M. N., Murel’, A. V., Novikov, A. V.

“…An original method for the controlled doping of silicon by segregating donor impurities is proposed. The approach is based on a rapid variation of the growth…”
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Resistance of proton-irradiated GaAs photodetectors to combined gamma and neutron radiation by Murel’, A. V., Obolenskii, S. V., Fefelov, A. G., Kiseleva, E. V.

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Electroluminescent Properties of Heterostructures with GaInNAs Quantum Wells by Murel’, A. V.

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Determination of the density of states in quantum wells and quantum dot arrays by the capacitance-voltage method by Aleshkin, V. Ya, Bekin, N. A., Buyanova, M. N., Murel’, A. V., Zvonkov, B. N.

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Single-crystalline GaAs, AlGaAs, and InGaAs layers grown by metalorganic VPE on porous GaAs substrates by Buzynin, Yu. N., Gusev, S. A., Danil’tsev, V. M., Drozdov, M. N., Drozdov, Yu. N., Murel’, A. V., Khrykin, O. I., Shashkin, V. I.

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Deep states in silicon δ-doped GaAs by Aleshkin, V. Ya, Danil’tsev, V. M., Murel’, A. V., Khrykin, O. I., Shashkin, V. I.

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Simple method for reconstructing the doping fine structure in semiconductors from C–V measurements in an electrolytic cell by Shashkin, V. I., Karetnikova, I. R., Murel’, A. V., Nefedov, I. M., Shereshevskii, I. A.

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