Search Results - "Murdoch, Gayle"

Cu passivation for integration of gap-filling ultralow-k dielectrics by Zhang, Liping, de Marneffe, Jean-Francois, Lesniewska, Alicja, Verdonck, Patrick, Heylen, Nancy, Murdoch, Gayle, Croes, Kristof, Boemmels, Juergen, Tokei, Zsolt, De Gendt, Stefan, Baklanov, Mikhail R.

“…For Cu/low-k interconnects, the reversed damascene is an alternative integration approach where the metal wires are patterned first and then the spacing filled…”
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Controlled cobalt recess for advanced interconnect metallization by Pacco, Antoine, Akanishi, Yuya, Le, Quoc Toan, Kesters, Els, Murdoch, Gayle, Holsteyns, Frank

“…We have developed a wet chemical etch process for the controlled recess of cobalt metal based on ‘digital etching’. Digital etching is a cyclic process wherein…”
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Integration and manufacturing aspects of moving from WaferBOND HT-10.10 to ZoneBOND material in temporary wafer bonding and debonding for 3D applications by Jourdain, Anne, Phommahaxay, Alain, Verbinnen, Greet, Murdoch, Gayle, Miller, Andy, Rebibis, Kenneth, Guerrero, Alice, McCutcheon, Jeremy, Privett, Mark, Neidrich, Jason, Beyer, Gerald, Beyne, Eric

“…Among the technological developments pushed by the emergence of 3D Stacked IC technologies, temporary wafer bonding has become a key element in device…”
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Impact of via density and passivation thickness on the mechanical integrity of advanced Back-End-Of-Line interconnects by Ključar, Luka, González, Mario, Croes, Kristof, De Wolf, Ingrid, De Messemaeker, Joke, Murdoch, Gayle, Nolmans, Philip, De Vos, Joeri, Bömmels, Jürgen, Beyne, Eric, Tőkei, Zsolt

“…The influence of via density and passivation thickness on the mechanical integrity of Back-End-Of-Line (BEOL) interconnects under Chip Package Interaction…”
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Redefining 2-Level Semi-Damascene Interconnect Technology: Benchmarking three different Fully Self-aligned Via options by Marti, Giulio, Delie, Gilles, Murdoch, Gayle, Gupta, Anshul, Kundu, Souvik, Decoster, Stefan, Pedreira, Olalla Varela, Lesniewska, Alicja, Hermans, Yanick, Kenens, Bart, Okudur, Fulya Ulu, Park, Seongho, Tokei, Zsolt

“…This study highlights the effectiveness of a novel two-metal-level semi-damascene integration approach using fully self-aligned pillar-vias (FSAV) for…”
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Airgap Integration in MP18 Two-Level Semi-damascene Interconnects with Fully Self-aligned Vias by Delie, Gilles, Murdoch, Gayle, Marti, Giulio, Gupta, Anshul, Wu, Chen, Lesniewska, Alicja, Gavrilov, Anton, Ciofi, Ivan, Kundu, Souvik, Decoster, Stefan, Park, Seongho, Tokei, Zsolt

“…Airgap integration in 18 to 26 nm metal pitch (MP) two-metal level semi-damascene interconnects with fully self-aligned vias (FSAV) on 300 mm wafers is…”
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Demonstration of MP18-26nm Ru Semi-Damascene Spacer-is-Dielectric SADP Integration by Wu, Chen, Decoster, Stefan, Renaud, Vincent, Hermans, Yannick, Marien, Philippe, Marti, Giulio, Heylen, Nancy, Kenens, Bart, Roy, Syamashree, Okudur, Fulya Ulu, Le, Quoc Toan, Reddy, Naveen, Marquez, Alfonso Sepulveda, Delie, Gilles, Gupta, Anshul, Lesniewska, Alicja, Murdoch, Gayle, Park, Seongho, Tokei, Zsolt

“…This work presents a novel Spacer-is-Dielectric (SID) SADP Ru semi-damascene integration scheme by using metal-based core and gap hard masks. More than 70%…”
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MP18-26 Ru Direct-Etch Integration Development with Leakage Improvement and Increased Aspect Ratio by Pokhrel, Ankit, Marti, Giulio, O'Toole, Martin, Murdoch, Gayle, Gupta, Anshul, Decoster, Stefan, Kundu, Souvik, Camerotto, Elisabeth, Le, Quoc Toan, Thiam, Arame, Lesniewska, Alicja, Park, Seongho, Tokei, Zsolt

“…Ru semi-damascene has been recently considered as a promising candidate to replace the conventional Cu dual damascene to meet the continued RC scaling needs in…”
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Subtractive Etch of Ruthenium for Sub-5nm Interconnect by Wan, Danny, Paolillo, Sara, Rassoul, Nouredine, Kotowska, Bogumila Kutrzeba, Blanco, Victor, Adelmann, Christoph, Lazzarino, Frederic, Ercken, Monique, Murdoch, Gayle, Bommels, Jurgen, Wilson, Christopher J., Tokei, Zsolt

“…Ruthenium has been recently considered as a promising candidate to replace copper as the BEOL interconnect material for sub-5nm technology nodes. In this work,…”
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Two Metal Level Semi-Damascene Interconnects for Superconducting Digital Logic by Iraci, Sara, Pokhrel, Ankit, Lozano, Daniel Perez, Soulie, Jean-Philippe, Sarkar, Sujan Kumar, Saroj, Rajendra Kumar, Canvel, Yann, Renaud, Vincent, Walke, Amey Mahadev, Kenens, Bart, Hodges, Blake, Ibrahim, Seifallah, Josephsen, Trent, Huet, Benjamin, Murdoch, Gayle, Kim, Min-Soo, O'Neal, Sabine, Herr, Quentin, Herr, Anna, Tokei, Zsolt

“…In this paper we present a superconducting two-metal level (2ML) BEOL unit process based on Nb x Ti (1-x) N (NbTiN) that was developed in imec's 300 mm pilot…”
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Semidamascene Interconnects for 2nm node and Beyond by Murdoch, Gayle, Tokei, Zsolt, Paolillo, Sara, Pedreira, Olalla Varela, Vanstreels, Kris, Wilson, Christopher J

“…In this paper we present a semidamascene integration approach for interconnect devices as an alternative to dual damascene. A Ru layer is deposited to fill…”
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Two-level Semi-damascene interconnect with fully self-aligned Vias at MP18 by Marti, Giulio, Pokhrel, Ankit, Murdoch, Gayle, Delie, Gilles, Gupta, Anshul, Marien, Philippe, Lesniewska, Alicja, Decoster, Stefan, Kundu, Souvik, Le, Quoc Toan, Oniki, Yusuke, Kenens, Bart, Hermans, Yanick, Park, Seongho, Tokei, Zsolt

“…We present the functionality of a semi-damascene integration scheme with fully self-aligned vias (FSAV) for interconnects varying 26 to 18nm metal pitch, using…”
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Two-metal-level semi-damascene interconnect at metal pitch 18 nm and aspect-ratio 6 routed using fully self-aligned via by Gupta, Anshul, Marti, Giulio, Delie, Gilles, Kundu, Souvik, Decoster, Stefan, Pedreira, Olalla Varela, Kenens, Bart, Farokhnejad, Anita, Hermans, Yannick, Wachter, Bart de, Gavrilov, Anton, Lesniewska, Alicja, Oniki, Yusuke, Pacco, Antoine, Murdoch, Gayle, Park, Seongho, Tokei, Zsolt

“…High-aspect ratio (HAR-6-8) bottom Ru metal lines (M2), at CDs 7-10 nm and metal pitch (MP) 18-26 nm, in a two-metal level Ru semi-damascene interconnect…”
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Feasibility study of fully self aligned vias for 5nm node BEOL by Murdoch, Gayle, Bommels, Jurgen, Wilson, Christopher J., Gavan, Khashayar Babaei, Quoc Toan Le, Tokei, Zsolt, Clark, William

“…In this paper we present the concept of the Fully Self Aligned Via (FSAV) with motivation of achieving manufacturable litho process windows for patterning vias…”
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Barrierless ALD Molybdenum for Buried Power Rail and Via-to-Buried Power Rail metallization by Gupta, Anshul, Maes, Jan Willem, Jourdan, Nicolas, Zhu, Chiyu, Datta, Sukanya, Pedreira, Olalla Varela, Le, Quoc Toan, Radisic, Dunja, Heylen, Nancy, Pacco, Antoine, Wang, Shouhua, Mousa, Moataz, Byun, Young, Seidel, Felix, de Wachter, Bart, Murdoch, Gayle, Tokei, Zsolt, Litta, Eugenio Dentoni, Horiguchi, Naoto

“…This work reports for the first time, a middle-of-line (MOL) compatible, barrier/liner-less ALD molybdenum (Mo) process on SiO 2 used for…”
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Impact of Via Density on the Mechanical Integrity of Advanced Back-End-of-Line During Packaging by Kljucar, Luka, Gonzalez, Mario, Croes, Kristof, De Wolf, Ingrid, Murdoch, Gayle, De Vos, Joeri, Bommels, Jurgen, Beyne, Eric, Tokei, Zsolt

“…The influence of via density on the mechanical integrity of Back-End-Of-Line (BEOL) interconnects under Chip Package Interaction (CPI) loading is evaluated…”
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Selective co growth on Cu for void-free via fill by Jun-Fei Zheng, Chen, Philip, Baum, Tomas H., Lieten, Ruben R., Hunks, William, Lippy, Steven, Frye, Asa, Weimin Li, O'Neill, James, Xu, Jeff, Zhu, John, Bao, Jerry, Machkaoutsan, Vladimir, Badaroglu, Mustafa, Yeap, Geoffrey, Murdoch, Gayle, Bommels, Jurgen, Tokei, Zsolt

“…We report for the first time a highly selective CVD Co deposition on Cu to fill a 45nm diameter 3:1 aspect ratio via in a Cu dual damascene structure. We have…”
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