Search Results - "Murdin, N."

The multi-photon induced Fano effect by Litvinenko, K. L., Le, Nguyen H., Redlich, B., Pidgeon, C. R., Abrosimov, N. V., Andreev, Y., Huang, Zhiming, Murdin, B. N.

“…The ordinary Fano effect occurs in many-electron atoms and requires an autoionizing state. With such a state, photo-ionization may proceed via pathways that…”
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Coherent control of Rydberg states in silicon by van der Meer, A. F. G, Murdin, B. N, Lynch, S. A, Pidgeon, C. R, Vinh, N. Q, Aeppli, G, Greenland, P. T, Redlich, B

“…Laser cooling and electromagnetic traps have led to a revolution in atomic physics, yielding dramatic discoveries ranging from Bose-Einstein condensation to…”
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Giant multiphoton absorption for THz resonances in silicon hydrogenic donors by van Loon, M. A. W., Stavrias, N., Le, Nguyen H., Litvinenko, K. L., Greenland, P. T., Pidgeon, C. R., Saeedi, K., Redlich, B., Aeppli, G., Murdin, B. N.

“…The absorption of multiple photons when there is no resonant intermediate state is a well-known nonlinear process in atomic vapours, dyes and semiconductors…”
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Highly efficient THz four-wave mixing in doped silicon by Dessmann, Nils, Le, Nguyen H., Eless, Viktoria, Chick, Steven, Saeedi, Kamyar, Perez-Delgado, Alberto, Pavlov, Sergey G., van der Meer, Alexander F. G., Litvinenko, Konstantin L., Galbraith, Ian, Abrosimov, Nikolay V., Riemann, Helge, Pidgeon, Carl R., Aeppli, Gabriel, Redlich, Britta, Murdin, Benedict N.

“…Third-order non-linearities are important because they allow control over light pulses in ubiquitous high-quality centro-symmetric materials like silicon and…”
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Coherent superpositions of three states for phosphorous donors in silicon prepared using THz radiation by Chick, S., Stavrias, N., Saeedi, K., Redlich, B., Greenland, P. T., Matmon, G., Naftaly, M., Pidgeon, C. R., Aeppli, G., Murdin, B. N.

“…Superposition of orbital eigenstates is crucial to quantum technology utilizing atoms, such as atomic clocks and quantum computers, and control over the…”
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Radii of Rydberg states of isolated silicon donors by Li, Juerong, Le, Nguyen, Li, K., Clowes, K., Engelkamp, H., Pavlov, S., Hübers, H., Shuman, V., Portsel, L. М., Lodygin, А., Astrov, Yu, Abrosimov, V., Pidgeon, C., Fisher, A., Zeng, Zaiping, Niquet, Y.-M., Murdin, N.

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Silicon as a model ion trap: Time domain measurements of donor Rydberg states by Vinh, N.Q, Greenland, P.T, Litvinenko, K, Redlich, B, van der Meer, A.F.G, Lynch, S.A, Warner, M, Stoneham, A.M, Aeppli, G, Paul, D.J, Pidgeon, C.R, Murdin, B.N

“…One of the great successes of quantum physics is the description of the long-lived Rydberg states of atoms and ions. The Bohr model is equally applicable to…”
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Time-Resolved Dynamics of Shallow Acceptor Transitions in Silicon by Vinh, N. Q., Redlich, B., van der Meer, A. F. G., Pidgeon, C. R., Greenland, P. T., Lynch, S. A., Aeppli, G., Murdin, B. N.

“…Shallow group-V donors in silicon may be thought of as hydrogenlike, and shallow acceptors are similarly described by effective-mass theory with similar energy…”
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Far-infrared free-electron lasers and their applications by Murdin, B. N.

“…Free-electron lasers based on radio-frequency linear accelerators provide an important source of far-infrared radiation which allow exciting experiments that…”
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Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys by Veal, T. D., Piper, L. F. J., Jefferson, P. H., Mahboob, I., McConville, C. F., Merrick, M., Hosea, T. J. C., Murdin, B. N., Hopkinson, M.

“…Photoluminescence (PL) has been observed from dilute InN x As 1 − x epilayers grown by molecular-beam epitaxy. The PL spectra unambiguously show band gap…”
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A new Fourier transform photo-modulation spectroscopic technique for narrow band-gap materials in the mid- to far-infra-red by Hosea, T. J. C., Merrick, M., Murdin, B. N.

“…There is a large number of technologically important semiconducting optoelectronic materials with narrow band‐gaps in the “finger‐print” region of the…”
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Single Ion Implantation of Bismuth by Cassidy, Nathan, Blenkinsopp, Paul, Brown, Ian, Curry, Richard J., Murdin, B. N., Webb, Roger, Cox, David

“…Herein, the results from a focused ion beam instrument, designed to implant single ions with a view to the fabrication of qubits for quantum technologies, are…”
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Error Rates in Deterministic Ion Implantation for Qubit Arrays by Murdin, B. N., Cassidy, Nathan, Cox, David, Webb, Roger, Curry, Richard J.

“…The theoretical error rates in deterministic ion implantation when using an ion beam governed by a Poisson point process with a detector that counts the…”
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Correction: Corrigendum: Coherent creation and destruction of orbital wavepackets in Si:P with electrical and optical read-out by Litvinenko, K. L., Bowyer, E. T., Greenland, P. T., Stavrias, N., Li, Juerong, Gwilliam, R., Villis, B. J., Matmon, G., Pang, M. L. Y., Redlich, B., van der Meer, A. F. G., Pidgeon, C. R., Aeppli, G., Murdin, B. N.

“…Nature Communications 6: Article number: 6549 (2015); Published: 20 March 2015; Updated: 20 April 2017 This Article was originally published under a CC…”
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Band gap reduction in GaNSb alloys due to the anion mismatch by Veal, T. D., Piper, L. F. J., Jollands, S., Bennett, B. R., Jefferson, P. H., Thomas, P. A., McConville, C. F., Murdin, B. N., Buckle, L., Smith, G. W., Ashley, T.

“…The structural and optoelectronic properties in GaN x Sb 1 − x alloys ( 0 ⩽ x < 0.02 ) grown by molecular-beam epitaxy on both GaSb substrates and AlSb buffer…”
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Photoassisted ionization spectroscopy of few implanted bismuth orbitals in a silicon-on-insulator device by Stockbridge, K., Deßmann, N., Eless, V., Peach, T., Murdin, B. N., Clowes, S. K.

“…The electrically detected orbital spectrum of a mesoscopic silicon device containing a small number of donors has been investigated. The device was fabricated…”
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Giant non-linear susceptibility of hydrogenic donors in silicon and germanium by Le, Nguyen H., Lanskii, Grigory V., Aeppli, Gabriel, Murdin, Benedict N.

“…Implicit summation is a technique for the conversion of sums over intermediate states in multiphoton absorption and the high-order susceptibility in hydrogen…”
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Growth of dilute GaNSb by plasma-assisted MBE by Buckle, L., Bennett, B.R., Jollands, S., Veal, T.D., Wilson, N.R., Murdin, B.N., McConville, C.F., Ashley, T.

“…Using plasma-assisted molecular beam epitaxy (MBE), GaN x Sb 1− x films have been grown onto GaSb and GaAs substrates over a range of growth temperatures…”
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Enhanced diffusion and bound exciton interactions of high density implanted bismuth donors in silicon by Peach, T., Stockbridge, K., Li, Juerong, Homewood, K. P., Lourenco, M. A., Chick, S., Hughes, M. A., Murdin, B. N., Clowes, S. K.

“…This study reports the effect of an increasing ion dose on both the electrical activation yield and the characteristic properties of implanted bismuth donors…”
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Spin relaxation in n-InSb/AlInSb quantum wells by Litvinenko, K L, Murdin, B N, Allam, J, Pidgeon, C R, Bird, M, Morris, K, Branford, W, Clowes, S K, Cohen, L F, Ashley, T, Buckle, L

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