Search Results - "Murdin, B N"

Coherent control of Rydberg states in silicon by van der Meer, A. F. G, Murdin, B. N, Lynch, S. A, Pidgeon, C. R, Vinh, N. Q, Aeppli, G, Greenland, P. T, Redlich, B

“…Laser cooling and electromagnetic traps have led to a revolution in atomic physics, yielding dramatic discoveries ranging from Bose-Einstein condensation to…”
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The multi-photon induced Fano effect by Litvinenko, K. L., Le, Nguyen H., Redlich, B., Pidgeon, C. R., Abrosimov, N. V., Andreev, Y., Huang, Zhiming, Murdin, B. N.

“…The ordinary Fano effect occurs in many-electron atoms and requires an autoionizing state. With such a state, photo-ionization may proceed via pathways that…”
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Giant multiphoton absorption for THz resonances in silicon hydrogenic donors by van Loon, M. A. W., Stavrias, N., Le, Nguyen H., Litvinenko, K. L., Greenland, P. T., Pidgeon, C. R., Saeedi, K., Redlich, B., Aeppli, G., Murdin, B. N.

“…The absorption of multiple photons when there is no resonant intermediate state is a well-known nonlinear process in atomic vapours, dyes and semiconductors…”
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Coherent superpositions of three states for phosphorous donors in silicon prepared using THz radiation by Chick, S., Stavrias, N., Saeedi, K., Redlich, B., Greenland, P. T., Matmon, G., Naftaly, M., Pidgeon, C. R., Aeppli, G., Murdin, B. N.

“…Superposition of orbital eigenstates is crucial to quantum technology utilizing atoms, such as atomic clocks and quantum computers, and control over the…”
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Silicon as a model ion trap: Time domain measurements of donor Rydberg states by Vinh, N.Q, Greenland, P.T, Litvinenko, K, Redlich, B, van der Meer, A.F.G, Lynch, S.A, Warner, M, Stoneham, A.M, Aeppli, G, Paul, D.J, Pidgeon, C.R, Murdin, B.N

“…One of the great successes of quantum physics is the description of the long-lived Rydberg states of atoms and ions. The Bohr model is equally applicable to…”
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Far-infrared free-electron lasers and their applications by Murdin, B. N.

“…Free-electron lasers based on radio-frequency linear accelerators provide an important source of far-infrared radiation which allow exciting experiments that…”
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Time-Resolved Dynamics of Shallow Acceptor Transitions in Silicon by Vinh, N. Q., Redlich, B., van der Meer, A. F. G., Pidgeon, C. R., Greenland, P. T., Lynch, S. A., Aeppli, G., Murdin, B. N.

“…Shallow group-V donors in silicon may be thought of as hydrogenlike, and shallow acceptors are similarly described by effective-mass theory with similar energy…”
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A new Fourier transform photo-modulation spectroscopic technique for narrow band-gap materials in the mid- to far-infra-red by Hosea, T. J. C., Merrick, M., Murdin, B. N.

“…There is a large number of technologically important semiconducting optoelectronic materials with narrow band‐gaps in the “finger‐print” region of the…”
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Single Ion Implantation of Bismuth by Cassidy, Nathan, Blenkinsopp, Paul, Brown, Ian, Curry, Richard J., Murdin, B. N., Webb, Roger, Cox, David

“…Herein, the results from a focused ion beam instrument, designed to implant single ions with a view to the fabrication of qubits for quantum technologies, are…”
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Error Rates in Deterministic Ion Implantation for Qubit Arrays by Murdin, B. N., Cassidy, Nathan, Cox, David, Webb, Roger, Curry, Richard J.

“…The theoretical error rates in deterministic ion implantation when using an ion beam governed by a Poisson point process with a detector that counts the…”
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Photoassisted ionization spectroscopy of few implanted bismuth orbitals in a silicon-on-insulator device by Stockbridge, K., Deßmann, N., Eless, V., Peach, T., Murdin, B. N., Clowes, S. K.

“…The electrically detected orbital spectrum of a mesoscopic silicon device containing a small number of donors has been investigated. The device was fabricated…”
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Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys by Veal, T. D., Piper, L. F. J., Jefferson, P. H., Mahboob, I., McConville, C. F., Merrick, M., Hosea, T. J. C., Murdin, B. N., Hopkinson, M.

“…Photoluminescence (PL) has been observed from dilute InN x As 1 − x epilayers grown by molecular-beam epitaxy. The PL spectra unambiguously show band gap…”
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Growth of dilute GaNSb by plasma-assisted MBE by Buckle, L., Bennett, B.R., Jollands, S., Veal, T.D., Wilson, N.R., Murdin, B.N., McConville, C.F., Ashley, T.

“…Using plasma-assisted molecular beam epitaxy (MBE), GaN x Sb 1− x films have been grown onto GaSb and GaAs substrates over a range of growth temperatures…”
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Enhanced diffusion and bound exciton interactions of high density implanted bismuth donors in silicon by Peach, T., Stockbridge, K., Li, Juerong, Homewood, K. P., Lourenco, M. A., Chick, S., Hughes, M. A., Murdin, B. N., Clowes, S. K.

“…This study reports the effect of an increasing ion dose on both the electrical activation yield and the characteristic properties of implanted bismuth donors…”
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Band gap reduction in GaNSb alloys due to the anion mismatch by Veal, T. D., Piper, L. F. J., Jollands, S., Bennett, B. R., Jefferson, P. H., Thomas, P. A., McConville, C. F., Murdin, B. N., Buckle, L., Smith, G. W., Ashley, T.

“…The structural and optoelectronic properties in GaN x Sb 1 − x alloys ( 0 ⩽ x < 0.02 ) grown by molecular-beam epitaxy on both GaSb substrates and AlSb buffer…”
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Temperature and doping dependence of spin relaxation in n-InAs by MURDIN, B. N, LITVINENKO, K, COHEN, L. F, ALLAM, J, PIDGEON, C. R, BIRD, M, MORRISON, K, ZHANG, T, CLOWES, S. K, BRANFORD, W. R, HARRIS, J

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Carrier recombination mechanisms in mid-infrared GaInAsSb quantum well lasers by O'Brien, K., Sweeney, S. J., Adams, A. R., Jin, S. R., Ahmad, C. N., Murdin, B. N., Salhi, A., Rouillard, Y., Joullié, A.

“…Hydrostatic pressure and spontaneous emission techniques have been used to examine the important recombination mechanisms in type‐I GaInAsSb/GaSb quantum well…”
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Radii of Rydberg states of isolated silicon donors by Li, Juerong, Le, Nguyen, Li, K., Clowes, K., Engelkamp, H., Pavlov, S., Hübers, H., Shuman, V., Portsel, L. М., Lodygin, А., Astrov, Yu, Abrosimov, V., Pidgeon, C., Fisher, A., Zeng, Zaiping, Niquet, Y.-M., Murdin, N.

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Coherent creation and destruction of orbital wavepackets in Si:P with electrical and optical read-out by Litvinenko, K.L., Bowyer, E.T., Greenland, P.T., Stavrias, N., Li, Juerong, Gwilliam, R., Villis, B.J., Matmon, G., Pang, M.L.Y., Redlich, B., van der Meer, A.F.G., Pidgeon, C.R., Aeppli, G., Murdin, B.N.

“…The ability to control dynamics of quantum states by optical interference, and subsequent electrical read-out, is crucial for solid state quantum technologies…”
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Si:P as a laboratory analogue for hydrogen on high magnetic field white dwarf stars by Murdin, B.N., Li, Juerong, Pang, M.L.Y., Bowyer, E.T., Litvinenko, K.L., Clowes, S.K., Engelkamp, H., Pidgeon, C.R., Galbraith, I., Abrosimov, N.V., Riemann, H., Pavlov, S.G., Hübers, H-W., Murdin, P.G.

“…Laboratory spectroscopy of atomic hydrogen in a magnetic flux density of 10 5  T (1 gigagauss), the maximum observed on high-field magnetic white dwarfs, is…”
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