Search Results - "Muñoz, Emiliano L"

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    Experimental and First-Principles Theoretical Study of Structural and Electronic Properties in Tantalum-Doped In2O3 Semiconductor: Finding a Definitive Hyperfine Interaction Assignment by Richard, Diego, Darriba, Germán N, Muñoz, Emiliano L, Errico, Leonardo A, Eversheim, Paul D, Rentería, Mario

    Published in Journal of physical chemistry. C (17-03-2016)
    “…In this work we present an experimental and theoretical study from first-principles of the structural, electronic, and hyperfine properties of Ta-doped In2O3…”
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    Journal Article
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    Ab Initio Study of Structural, Electronic, and Hyperfine Properties of n‑type SnO2:Ta Semiconductor by Darriba, Germán N, Muñoz, Emiliano L, Errico, Leonardo A, Rentería, Mario

    Published in Journal of physical chemistry. C (28-08-2014)
    “…A detailed theoretical first-principles study of structural, electronic, and hyperfine properties at Sn and Ta sites of undoped and Ta-doped rutile SnO2 is…”
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    Journal Article
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    Electric-field gradients at Ta impurities in Sc2O3 semiconductor by Richard, Diego, Muñoz, Emiliano L., Errico, Leonardo A., Rentería, Mario

    Published in Physica. B, Condensed matter (15-08-2012)
    “…In this work we present an ab initio study of Ta-doped Sc2O3 semiconductor. Calculations were performed at dilute Ta impurities located at both cationic sites…”
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    Dynamic hyperfine interactions in 111In(111Cd)-doped ZnO semiconductor: PAC results supported by ab initio calculations by Muñoz, Emiliano L., Mercurio, Marcio E., Cordeiro, Moacir R., Pereira, Luciano F.D., Carbonari, Artur W., Rentería, Mario

    Published in Physica. B, Condensed matter (15-08-2012)
    “…In this work, we present results of Time-Differential γ–γ Perturbed-Angular-Correlations (PAC) experiments performed in 111Cd-doped ZnO semiconductor. The PAC…”
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    Journal Article
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