Analysis of Kinetic Properties and Tunnel-Coupled States in Asymmetrical Multilayer Semiconductor Structures

This study investigates the kinetic properties of both symmetrical and asymmetrical multilayer and nano-sized semiconductor structures. We develop a theoretical framework using various models and mathematical methods to solve the Schrödinger matrix equation for a system of electrons, taking into acc...

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Bibliographic Details
Published in:	East European journal of physics no. 2; pp. 270 - 273
Main Authors:	Rasulov, Rustam Y., Rasulov, Vokhob R., Urinova, Kamolakhon K., Muminov, Islombek A., Akhmedov, Bakhodir B.
Format:	Journal Article
Language:	English
Published:	V.N. Karazin Kharkiv National University Publishing 01-06-2024
Subjects:	bastard condition electrons hamiltonian multilayer and nano-sized semiconductor structures schrödinger matrix equation
Online Access:	Get full text
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Summary:	This study investigates the kinetic properties of both symmetrical and asymmetrical multilayer and nano-sized semiconductor structures. We develop a theoretical framework using various models and mathematical methods to solve the Schrödinger matrix equation for a system of electrons, taking into account the Bastard condition, which considers the difference in the effective masses of current carriers in adjacent layers. We analyze tunnel-coupled electronic states in quantum wells separated by a narrow tunnel-transparent potential barrier. Our findings provide insights into the electronic properties of semiconductor structures, which are crucial for applications in micro- or nanoelectronics and other areas of solid-state physics.
ISSN:	2312-4334 2312-4539
DOI:	10.26565/2312-4334-2024-2-27