Search Results - "Mulgrew, P. P."

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  1. 1

    Defect repair for soft x‐ray projection lithography masks by Tennant, D. M., Fetter, L. A., Harriott, L. R., MacDowell, A. A., Mulgrew, P. P., Waskiewicz, W. K., Windt, D. L., Wood, O. R.

    “…The most promising option for masks intended for use in soft x‐ray projection lithography (SXPL) at λ=13 nm is a reflective mask which uses a Mo/Si multilayer…”
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    Conference Proceeding
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    Characterization of near‐field holography grating masks for optoelectronics fabricated by electron beam lithography by Tennant, D. M., Koch, T. L., Mulgrew, P. P., Gnall, R. P., Ostermeyer, F., Verdiell, J‐M.

    “…Direct write e‐beam lithography and reactive ion etching was used to fabricate square‐wave gratings in quartz substrates which serve as pure phase masks in the…”
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    Conference Proceeding Journal Article
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    High-performance deep-submicrometer Si MOSFETs using vertical doping engineering by Yan, R.H., Lee, K.F., Jeon, D.Y., Kim, Y.O., Tennant, D.M., Westerwick, E.H., Chin, G.M., Morris, M.D., Early, K., Mulgrew, P.

    Published in IEEE transactions on electron devices (01-11-1992)
    “…Summary form only given. Vertical doping engineering was used to implement deep-submicrometer Si MOS devices with excellent room-temperature turn-off and…”
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    Journal Article
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    Characterization of AZ PN114 resist for high resolution using electron‐beam and soft‐x‐ray projection lithographies by Early, K., Tennant, D. M., Jeon, D. Y., Mulgrew, P. P., MacDowell, A. A., Wood, O. R.

    “…We report on resolution experiments with the negative chemically amplified resist AZ PN114. Using soft‐x‐ray projection lithography at λ=14 nm, we imaged…”
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    Conference Proceeding
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    89-GHz f/sub T/ room-temperature silicon MOSFETs by Yan, R.-H., Lee, K.F., Jeon, D.Y., Kim, Y.O., Park, B.G., Pinto, M.R., Rafferty, C.S., Tennant, D.M., Westerwick, E.H., Chin, G.M., Morris, M.D., Early, K., Mulgrew, P., Mansfield, W.M., Watts, R.K., Voshchenkov, A.M., Bokor, J., Swartz, R.G., Ourmazd, A.

    Published in IEEE electron device letters (01-05-1992)
    “…The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f/sub T/) of 89…”
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    Journal Article
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    Effects of processing pressure on device damage in RF biased ECR CVD by Lassig, S.E., Vahedi, V., Benjamin, N., Mulgrew, P., Gottscho, R.

    “…Charging effects were investigated in an electron cyclotron resonance (ECR) plasma-enhanced CVD system using a variety of techniques including CHARM-2 wafers…”
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    Conference Proceeding
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    89-GHz < e1 > f < /e1 > (T) room-temperature silicon MOSFETs by Yan, R-H, Lee, K F, Jeon, D Y, Kim, Y O, Park, B G, Pinto, M R, Rafferty, C S, Tennant, D M, Westerwick, E H, Chin, G M, Morris, M D, Early, K, Mulgrew, P, Mansfield, W M, Watts, R K, Voshchenkov, A M, Bokor, J, Swartz, R G, Ourmazd, A

    Published in IEEE electron device letters (01-05-1992)
    “…The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency ( < e1 > f < /e1 >…”
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    Journal Article
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    High performance 0.1- mu m room temperature Si MOSFETs by Yan, R.H., Lee, K.F., Jeon, D.Y., Kim, Y.O., Park, B.G., Pinto, M.R., Rafferty, C.S., Tennant, D.M., Westerwick, E.H., Chin, G.M., Morris, M.D., Early, K., Mulgrew, P., Mansfield, W.M., Watts, R.K., Voshchenkov, A.M., Bokor, J., Swartz, R.G., Ourmazd, A.

    “…The design and implementation of 0.15- mu m-channel N-MOSFETs with very high current drive and good short channel behavior at room temperature are discussed…”
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    Conference Proceeding
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    An Alternative Method for Teaching a Course in Group Methods by Mulgrew, John P

    “…Briefly describes a point system used in a course on group methods to provide greater flexibility for students. (CJ)…”
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    Journal Article
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    UNDER THE MAKE-UP by Mulgrew, John P

    Published in Variety (01-01-1915)
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    Magazine Article