Search Results - "Mukhlyo, M.A"

Changes induced in a ZnS:Cr-based electroluminescent waveguide structure by intrinsic near-infrared laser radiation by Vlasenko, N. A., Oleksenko, P. F., Mukhlyo, M. A., Veligura, L. I.

“…The causes of changes that occur in a thin-film electroluminescent metal-insulator-semiconductor-insulator-metal waveguide structure based on ZnS:Cr (Cr…”
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Effect of erbium fluoride doping on the photoluminescence of Si[O.sub.x] films by Vlasenko, N.A, Sopinskii, N.V, Gule, E.G, Strelchuk, V.V, Oleksenko, P.F, Veligura, L.I, Nikolenko, A.S, Mukhlyo, M.A

“…The photoluminescence of Si[O.sub.x] films deposited on c-Si wafers by the thermal evaporation of SiO in a vacuum and, for the first time, doped with…”
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Specific features and nature of the 890 nm photoluminescence band detected in Si[O.sub.x] films after low-temperature annealing by Vlasenko, N.A, Sopinskii, N.V, Gule, E.G, Manoilov, E.G, Oleksenko, P.F, Veligura, L.I, Mukhlyo, M.A

“…A band with a peak at 890 nm is detected in the photoluminescence spectra of Si[O.sub.x] (x ≅ 1.3) films deposited by thermal evaporation of SiO and annealed…”
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Erratum: "electronic states on silicon surface after deposition and annealing of Si[O.sub.x] films" [semiconductors 45, 587 ] by Vlasenko, N.A, Oleksenko, P.F, Denisova, Z.L, Sopinskii, N.V, Veligura, L.I, Gule, E.G, Litvin, O.S, Mukhlyo, M.A

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Electronic states on silicon surface after deposition and annealing of Si[O.sub.x] films by Vlasenko, N.A, Oleksenko, P.F, Denisova, Z.L, Sopinskii, N.V, Veligura, L.I, Gule, E.G, Litvin, O.S, Mukhlyo, M.A

“…The spectrum of the photoconductivity induced by the polarization field of charges at surface states and traps in the film bulk has been analyzed to determine…”
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