Search Results - "Mukashev, B.N."

A metallurgical route to produce upgraded silicon and monosilane by Mukashev, B.N., Abdullin, Kh.A., Tamendarov, M.F., Turmagambetov, T.S., Beketov, B.A., Page, M.R., Kline, D.M.

“…We studied alumothermic reduction of silica from silicate slag to obtain silicon-containing Alloy-I and Alloy-II. Phosphorous industry waste and synthetic slag…”
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Annealing mechanisms of self-interstitial related defect E1=Ec−0.39eV in irradiated silicon by Abdullin, Kh.A., Mukashev, B.N.

“…DLTS and thermally stimulated capacitance (TSCap) studies of α-particle irradiated p-Si were undertaken to obtain additional information about the…”
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Study of Paramagnetic Properties of Graphene Structures Obtained from Pure Graphite in Organic Reagents Exposed to Ultrasound by Baytimbetova, B. A., Ryabikin, Yu. A., Mukashev, B. N.

“…To obtain graphene, we propose to use organic reagents and pure graphite exposed to ultrasound. Toluene, benzene, kerosene, and hydrogen peroxide are used as…”
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Extraction of signal from noise in research of spectra of nanosized structures by Fedosimova, A.I., Baitimbetova, B.A., Dmitrieva, E.A., Kudryashov, V., Lebedev, I.A., Mukashev, B.N., Ryabikin, Yu.A., Temiraliev, A.T.

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Study of silicon production processes and development of solar-cell fabrication technologies by Mukashev, B. N., Betekbaev, A. A., Kalygulov, D. A., Pavlov, A. A., Skakov, D. M.

“…The methods of purification of “Kazsilicon” metallurgical silicon produced by the carbothermal method, i.e., the reduction of high-purity Sary-Kol quartz into…”
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Comparison of the characteristics of solar cells fabricated from multicrystalline silicon with those fabricated from silicon obtained by the monolike technology by Betekbaev, A. A., Mukashev, B. N., Pelissier, L., Lay, P., Fortin, G., Bounaas, L., Skakov, D. M., Kalygulov, D. A., Turmagambetov, T. S., Lee, V. V.

“…In order to raise the efficiency of solar cells and reduce the cost of their production, a new process for obtaining silicon ingots based on the so-called…”
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Self-interstitials and related defects in irradiated silicon by Gorelkinskii, Yu.V., Abdullin, Kh.A., Mukashev, B.N., Turmagambetov, T.S.

“…Low intensity light ions (H+ or He++) irradiation of silicon introduced EPR Si–AA12 defect. Si–AA12 reveals close correlations with DLTS E1=Ec−0.39eV minority…”
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Structural formation of aluminide phases on titanium substrate by Romankov, S.E., Mukashev, B.N., Ermakov, E.L., Muhamedshina, D.N.

“…An aluminum layer on titanium substrate has been formed by thermal deposition. The structural formation of aluminide phases on the Ti substrate has been…”
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Electron spin resonance of light holes in porous silicon by Gorelkinski, Yu.V., Abdullin, Kh.A., Kalykova, G.K., Mukashev, B.N., Olzhabay, A.T., Turmagambetov, T.S.

“…A new ESR spectrum labeled Si-AA20 is revealed in porous silicon after annealing at 1000°C. The AA20 line has a Dyson type that allows to attribute the AA20 to…”
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Stable ultraviolet photoluminescence of nanoporous silicon by Gorelkinskii, Yu.V., Abdullin, Kh.A., Kalykova, G.K., Kikkarin, S.M., Mukashev, B.N.

“…In this paper, we report for the first time the observation from porous silicon (PS) the intense, narrow (∼0.12 eV) line of ultraviolet (UV) (375 nm)…”
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Shallow bistable non-effective-mass-like donors in hydrogen-implanted silicon by Tokmoldin, S.Zh, Issova, A.T., Abdullin, Kh.A., Mukashev, B.N.

“…Infrared absorption of float-zone-refined silicon crystals implanted with protons and annealed at 450 °C has been investigated in the range 150–1800 cm −1…”
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Influence of structure changes of oxide films on their physical properties by Mukashev, B.N., Tokmoldin, S.Zh, Beisenkhanov, N.B., Kikkarin, S.M., Valitova, I.V., Glazman, V.B., Aimagambetov, A.B., Dmitrieva, E.A., Veremenithev, B.M.

“…A correlation between structural and electrical properties of tin and zinc oxide films deposited on a glass substrate by ion-beam deposition and magnetron…”
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Electron transport in heavily doped amorphous SnO 2 near metal–insulator transition by Mukashev, B.N, Kikkarin, S.M, Mukhitdinov, A.M, Tamendarov, M.F

“…The metal–insulator transition (MIT) in amorphous SiO x thin films driven by heavily doping with native oxygen vacancies has been investigated. We have found…”
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Thermal and phase characterization of Bi-2223 superconductors by Khan, M.N, Khizar, M, Mukashev, B.N

“…Advances in processing and fabrication of high critical current density ( J c) long length conductors, silver sheathed superconducting magnets and coils from…”
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Electrical and optical properties of zinc oxide thin films grown by reactive magnetron sputtering method by Abdullin, Kh.A., Aimagambetov, A.B., Beisenkhanov, N.B., Issova, A.T., Mukashev, B.N., Tokmoldin, S.Zh

“…ZnO is very interesting material for practical applications because of its high transparency in the visible light and simultaneously high electrical…”
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Electrical properties of nanoclusters in hydrogenized monocrystalline silicon by Abdullin, Kh.A., Gorelkinskii, Yu.V., Mukashev, B.N., Serikkanov, A.S.

“…Electrical properties of bistable shallow donors in monocrystalline silicon which are introduced by proton implantation followed by annealing at 300–450°C have…”
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Defects agglomeration in the vicinity of hydrogen-related vacancy-type complexes in proton-implanted silicon by Tokmoldin, S.Zh, Mukashev, B.N.

“…The results of IR studies of H interactions with radiation-induced defects in crystalline Si implanted with protons (Si : H) are presented. Wide doublets at…”
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Interactions of primary defects with impurities in silicon by Mukashev, B.N., Abdullin, Kh.A., Gorelkinskii, Yu.V.

“…The electron irradiation of silicon at low temperature (∼4 K) causes the annihilation or separation of the main part of the Frenkel pairs. However the…”
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Development of a technology of silicon production by recycling phosphorous industry wastes by Mukashev, B.N., Tamendarov, M.F., Kikkarin, S.M., Ustimenko, A.B.

“…A technology of silicon production by recycling the wastes of phosphorous industry is suggested. The process of alumothermic reduction of silica from the waste…”
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Hydrogen-induced formation of defects nanoclusters in crystalline silicon by Abdullin, Kh.A., Gorelkinskii, Yu.V., Mukashev, B.N.

“…Low-temperature hydrogen-assisted clusterization of aluminum impurity in silicon has been studied. It was found that hydrogen can decrease the diffusion…”
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