Search Results - "Mu, Fengwen"

Interfacial Thermal Conductance across Room-Temperature-Bonded GaN/Diamond Interfaces for GaN-on-Diamond Devices by Cheng, Zhe, Mu, Fengwen, Yates, Luke, Suga, Tadatomo, Graham, Samuel

“…The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an ideal material for high-power and high-frequency electronics…”
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Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices by Mu, Fengwen, He, Ran, Suga, Tadatomo

“…Fabrication of GaN-on-diamond structure by bonding technology is becoming more and more attractive for high-power GaN devices. However, researches on low…”
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Graphene and Graphene-Based Nanomaterials for DNA Detection: A Review by Wu, Xin, Mu, Fengwen, Wang, Yinghui, Zhao, Haiyan

“…DNA detection with high sensitivity and specificity has tremendous potential as molecular diagnostic agents. Graphene and graphene-based nanomaterials, such as…”
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High Thermal Boundary Conductance across Bonded Heterogeneous GaN–SiC Interfaces by Mu, Fengwen, Cheng, Zhe, Shi, Jingjing, Shin, Seongbin, Xu, Bin, Shiomi, Junichiro, Graham, Samuel, Suga, Tadatomo

“…High-power GaN-based electronics are limited by high channel temperatures induced by self-heating, which degrades device performance and reliability…”
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GaN-Si direct wafer bonding at room temperature for thin GaN device transfer after epitaxial lift off by Mu, Fengwen, Morino, Yuki, Jerchel, Kathleen, Fujino, Masahisa, Suga, Tadatomo

“…[Display omitted] •GaN-Si direct wafer bonding with high bonding energy was accomplished at room temperature for the first time.•The phenomenon of…”
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Suppression of interface states between nitride-based gate dielectrics and ultrathin-barrier AlGaN/GaN heterostructure with in situ remote plasma pretreatments by Guo, Fuqiang, Huang, Sen, Wang, Xinhua, Luan, Tiantian, Shi, Wen, Deng, Kexin, Fan, Jie, Yin, Haibo, Shi, Jingyuan, Mu, Fengwen, Wei, Ke, Liu, Xinyu

“…A silicon nitride (SiNx) film deposited at 500 °C by plasma-enhanced atomic layer deposition (PEALD) is employed as the gate dielectric for GaN-based…”
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Direct wafer bonding of Ga2O3–SiC at room temperature by Xu, Yang, Mu, Fengwen, Wang, Yinghui, Chen, Dapeng, Ou, Xin, Suga, Tadatomo

“…Integration of Ga2O3 on SiC substrate with a high thermal conductivity is one of the promising solutions to reduce the self-heating of Ga2O3 devices. Direct…”
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Room Temperature Wafer Bonding of Glass Using Aluminum Oxide Intermediate Layer by Takeuchi, Kai, Mu, Fengwen, Matsumoto, Yoshiie, Suga, Tadatomo

“…This paper presents a room temperature bonding technique of glass substrates with a transparent bonding interface. As a room temperature bonding method,…”
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Low-temperature bonding of surface-activated polyimide to Cu Foil in Pt-catalyzed formic acid atmosphere by Meng, Ying, Xu, Yang, Gao, Runhua, Wang, Xinhua, Chen, Xiaojuan, Huang, Sen, Wei, Ke, Wang, Dahai, Yin, Haibo, Takeuchi, Kai, Suga, Tadatomo, Mu, Fengwen, Liu, Xinyu

“…In this study, a two-step process involving oxygen plasma surface activation and thermos-compression in Pt-catalyzed formic acid gas was used to bond Cu foil…”
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Low temperature Cu bonding with large tolerance of surface oxidation by Ren, Hui, Mu, Fengwen, Shin, Seongbin, Liu, Lei, Zou, Guisheng, Suga, Tadatomo

“…A novel method of low temperature all-Cu bonding was developed, which has a large tolerance for Cu surface oxidation and can even bond Cu with a thick oxide…”
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Direct Bonding Method for Completely Cured Polyimide by Surface Activation and Wetting by Meng, Ying, Gao, Runhua, Wang, Xinhua, Huang, Sen, Wei, Ke, Wang, Dahai, Mu, Fengwen, Liu, Xinyu

“…Polymer adhesives have emerged as a promising dielectric passivation layer in hybrid bonding for 3D integration, but they raise misalignment problems during…”
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Development of a numerical model for simulating stress corrosion cracking in spent nuclear fuel canisters by Wu, Xin, Mu, Fengwen, Gordon, Scott, Olson, David, Liu, Stephen, Shayer, Zeev, Yu, Zhenzhen

“…Prediction and detection of the chloride-induced stress corrosion cracking (CISCC) in Type 304 stainless steel spent nuclear fuel canisters are vital for the…”
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Direct wafer bonding of GaN-SiC for high power GaN-on-SiC devices by Mu, Fengwen, Wang, Yinghui, He, Ran, Suga, Tadatomo

“…GaN-on-SiC has been very attractive for high-power GaN device owing to the high thermal conductivity of SiC substrate. However, the transition layer with a…”
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Cu-Cu Thermocompression Bonding with a Self-Assembled Monolayer as Oxidation Protection for 3D/2.5D System Integration by Lykova, Maria, Panchenko, Iuliana, Schneider-Ramelow, Martin, Suga, Tadatomo, Mu, Fengwen, Buschbeck, Roy

“…Cu-Cu direct interconnects are highly desirable for the microelectronic industry as they allow for significant reductions in the size and spacing of…”
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Silicon carbide wafer bonding by modified surface activated bonding method by Suga, Tadatomo, Mu, Fengwen, Fujino, Masahisa, Takahashi, Yoshikazu, Nakazawa, Haruo, Iguchi, Kenichi

“…4H-SiC wafer bonding has been achieved by the modified surface activated bonding (SAB) method without any chemical-clean treatment and high temperature…”
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Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline β-Ga2O3 thin film on SiC by Xu, Wenhui, You, Tiangui, Wang, Yibo, Shen, Zhenghao, Liu, Kang, Zhang, Lianghui, Sun, Huarui, Qian, Ruijie, An, Zhenghua, Mu, Fengwen, Suga, Tadatomo, Han, Genquan, Ou, Xin, Hao, Yue, Wang, Xi

“…The semiconductor, β-Ga2O3 is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap (∼4.9 eV) and…”
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Author Correction: Development of a numerical model for simulating stress corrosion cracking in spent nuclear fuel canisters by Wu, Xin, Mu, Fengwen, Gordon, Scott, Olson, David, Liu, Stephen, Shayer, Zeev, Yu, Zhenzhen

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Wafer-scale heterogeneous integration InP on trenched Si with a bubble-free interface by Lin, Jiajie, You, Tiangui, Jin, Tingting, Liang, Hao, Wan, Wenjian, Huang, Hao, Zhou, Min, Mu, Fengwen, Yan, Youquan, Huang, Kai, Zhao, Xiaomeng, Zhang, Jiaxiang, Wang, Shumin, Gao, Peng, Ou, Xin

“…Heterogeneous integration of compound semiconductors on a Si platform leads to advanced device applications in the field of Si photonics and high frequency…”
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Heterogeneous GaN-Si integration via plasma activation direct bonding by Matsumae, Takashi, Fengwen, Mu, Fukumoto, Shoya, Hayase, Masanori, Kurashima, Yuichi, Higurashi, Eiji, Takagi, Hideki, Suga, Tadatomo

“…Direct bonding of GaN and Si substrates at 125 °C under atmospheric conditions was investigated by different Plasma activation bonding (PAB) methods. The…”
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Robust Ag-Cu Sintering Bonding at 160 °C via Combining Ag2O Microparticle Paste and Pt-Catalyzed Formic Acid Vapor by He, Liangliang, Li, Junlong, Wu, Xin, Mu, Fengwen, Wang, Yinghui, Lu, Yangting, Suga, Tadatomo

“…With the assistance of Pt-catalyzed formic acid vapor, robust Ag-Cu bonding was realized at an ultra-low temperature of 160 °C under 3 MPa for 30 min via the…”
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