Phonon-drag in a graphite channel buried in diamond

While the phonon-drag effect can induce large Seebeck coefficients, it is associated with large mean free path phonons present in the vicinity of the maximum in temperature of the lattice thermal conductivity. In this paper, we initiate a new route by searching for the mutual drag between the electr...

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Bibliographic Details
Published in:Solid state sciences Vol. 151; p. 107494
Main Authors: Salami, S., Debord, R., Giordano, V.M., Fulcrand, R., Mahonisi, N., Mthwesi, Z., Blanchard, N., Every, A., Vignoli, S., Adessi, C., Naidoo, S.R., Pailhès, S.
Format: Journal Article
Language:English
Published: Elsevier Masson SAS 01-05-2024
Elsevier
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Summary:While the phonon-drag effect can induce large Seebeck coefficients, it is associated with large mean free path phonons present in the vicinity of the maximum in temperature of the lattice thermal conductivity. In this paper, we initiate a new route by searching for the mutual drag between the electron and phonon-drag gases at the interface between two different media. In that respect, the temperature studies of the conductance and Seebeck coefficient of a model system consisting of an electrically conductive graphitic channel buried beneath the surface of a diamond crystal are shown. The observed behaviour is very similar to that of graphite, with a typical negative peak associated with the phonon-drag effect. Interestingly, this phonon-drag peak of the buried graphitic channel appears at a significantly higher temperature than that in pure graphite. [Display omitted] •Electrical and Seebeck measurements were performed on a conducting channel buried in diamond by He-implantation and high temperature annealing.•The process to realize ohmic connections to the buried channel from the top surface was achieved.•Conduction from extended graphitic-like conducting states localized at the interfaces was observed.•A phonon-drag contribution in the Seebeck was observed at a temperature higher than that in pure graphite.
ISSN:1293-2558
1873-3085
DOI:10.1016/j.solidstatesciences.2024.107494