Search Results - "Mrcarica, Zeljko"
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1
ESD protection for thin gate oxides in 65 nm
Published in Microelectronics and reliability (2010)“…Unexpected functional failures were found in the core of an IC, processed in a 65 nm technology with 1.8 nm gate oxide, after Machine Model (MM) testing,…”
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2
Distributed control based on distributed electronic circuits: application to vibration control
Published in Microelectronics and reliability (01-11-2001)“…This paper focuses on the design of distributed control related to distributed mechanical systems. The sensors and actuators are assumed to be numerous and…”
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3
ESD robust high-voltage active clamps : Electrostatic Discharge Reliability
Published in Microelectronics and reliability (2009)Get full text
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4
ESD robust high-voltage active clamps
Published in Microelectronics and reliability (01-12-2009)“…Using circuit simulation extended by a proper failure criterion, the HBM and TLP robustness of high-voltage clamps can be accurately predicted without the need…”
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5
Electro-thermal simulation of microsystems with mixed abstraction modelling
Published in Microelectronics and reliability (01-06-2001)“…Electro-thermal coupling is only one aspect of numerous interactions between physical domains in microsystems. Different physical effects govern the…”
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6
Transient electro-thermal simulation of microsystems with space-continuous thermal models in an analogue behavioural simulator
Published in Microelectronics and reliability (01-03-2000)“…In many microsystems (MEMS), thermal effects have significant importance and system-level electro-thermal simulation is needed to shorten the product…”
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7
Time-domain analysis of nonlinear switched networks with internally controlled switches
Published in IEEE transactions on circuits and systems. 1, Fundamental theory and applications (01-03-1999)“…The paper describes a new model of an ideal switch, which can be used in standard circuit simulation algorithms. There are no restrictions on network topology…”
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8
Gate oxide protection and ggNMOSTs in 65 nm
Published in EOS/ESD 2008 - 2008 30th Electrical Overstress/Electrostatic Discharge Symposium (01-09-2008)“…Unexpected functional failures were found in the core of an IC, processed in a 65 nm technology with 1.8 nm gate oxide after MM testing, although a…”
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Conference Proceeding -
9
ESD protection for thin gate oxides in 65nm
Published in Microelectronics and reliability (01-01-2010)Get full text
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10
Electronic circuit simulation in a mixed-language environment
Published in Microelectronics (01-08-1998)“…Simulation of complex systems, that include analogue and digital circuitry and even non-electrical devices, may be simplified if libraries developed in…”
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11
Ideal switch model cuts simulation time
Published in IEEE circuits and devices magazine (01-07-2006)“…Considering the fact that any circuit containing an ideal switch is nonlinear, we developed a model for the ideal switch that is applicable in a…”
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12
Simulation of non-linear magnetic circuits modelled using artificial neural network
Published in Simulation practice and theory (15-08-1997)“…Simulation of electromechanical systems and other systems where coupling of different physical effects is modelled, is currently a very active research area…”
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13
Mixed-signal modeling with AleC++: Specific features of the HDL
Published in Simulation practice and theory (15-03-2001)“…Alecsis behavioral simulator and its mixed-signal hardware description language (HDL) AleC++ form an open simulation environment, where electronic circuits and…”
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14
ESD protection for high-voltage CMOS technologies
Published in 2006 Electrical Overstress/Electrostatic Discharge Symposium (01-09-2006)“…Two types of ESD protection for high-voltage CMOS technologies are presented. Both solutions can be readily ported between different HV CMOS process options…”
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15
Designing HV active clamps for HBM robustness
Published in 2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) (01-09-2007)“…Electrical measurements, physical damage analysis, and device simulation have proved that the drain junction breakdown voltage is the determining failure…”
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