Defect and Threading Dislocations in Single Crystal Diamond: A Focus on Boron and Nitrogen Codoping

For the fabrication of vertical power electronic components, the use of a freestanding highly boron‐doped single crystal diamond substrate is mandatory, on top of which a thin low‐doped active layer is overgrown. The crystalline quality of this substrate is of prime importance as the high doping lev...

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Bibliographic Details
Published in:	Physica status solidi. A, Applications and materials science Vol. 216; no. 21
Main Authors:	Issaoui, Riadh, Tallaire, Alexandre, Mrad, Aida, William, Ludovic, Bénédic, Fabien, Pinault-Thaury, Marie-Amandine, Achard, Jocelyn
Format:	Journal Article
Language:	English
Published:	Weinheim Wiley Subscription Services, Inc 01-11-2019 Wiley
Subjects:	Boron boron-doped diamonds Chemical vapor deposition Crystal defects Crystal dislocations defect densities Diamond films Electronic components Electronic devices Engineering Sciences Morphology Nitrogen nitrogen doping Organic chemistry Raman spectroscopy Single crystals Substrates Threading dislocations
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Summary:	For the fabrication of vertical power electronic components, the use of a freestanding highly boron‐doped single crystal diamond substrate is mandatory, on top of which a thin low‐doped active layer is overgrown. The crystalline quality of this substrate is of prime importance as the high doping level required is also likely to lead to the generation of extended defects in the active layer. Herein, the improvement of the quality of thick highly boron‐doped diamond films grown by chemical vapor deposition (CVD) is investigated. Codoping with a low amount of nitrogen is explored as a way to limit the formation and propagation of extended defects. It is shown that the growth rate and boron concentration are not impacted by the addition of nitrogen with the parameters used in this study. Surface morphology and defect density estimated for each amount of nitrogen are presented; and Raman spectroscopy confirms that nitrogen addition compensates the strain induced by boron incorporation in single crystal diamond. Codoping with nitrogen is thus demonstrated as a useful strategy to obtain high quality boron‐doped diamond substrates potentially suitable for the development of power devices. The improvement of the quality of thick highly boron‐doped single‐crystal diamond grown by chemical vapor deposition is investigated. Codoping with low amounts of nitrogen is explored as a way limiting the formation and propagation of defects. Codoping with nitrogen is demonstrated as a useful strategy to obtain high‐quality boron‐doped diamond potentially suitable for the development of power devices.
ISSN:	1862-6300 1862-6319
DOI:	10.1002/pssa.201900581