Search Results - "Movva, Hema C.P"

Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation by Rai, Amritesh, Valsaraj, Amithraj, Movva, Hema C.P, Roy, Anupam, Ghosh, Rudresh, Sonde, Sushant, Kang, Sangwoo, Chang, Jiwon, Trivedi, Tanuj, Dey, Rik, Guchhait, Samaresh, Larentis, Stefano, Register, Leonard F, Tutuc, Emanuel, Banerjee, Sanjay K

“…To reduce Schottky-barrier-induced contact and access resistance, and the impact of charged impurity and phonon scattering on mobility in devices based on 2D…”
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van der Waals Heterostructures with High Accuracy Rotational Alignment by Kim, Kyounghwan, Yankowitz, Matthew, Fallahazad, Babak, Kang, Sangwoo, Movva, Hema C. P, Huang, Shengqiang, Larentis, Stefano, Corbet, Chris M, Taniguchi, Takashi, Watanabe, Kenji, Banerjee, Sanjay K, LeRoy, Brian J, Tutuc, Emanuel

“…We describe the realization of van der Waals (vdW) heterostructures with accurate rotational alignment of individual layer crystal axes. We illustrate the…”
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High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors by Movva, Hema C. P, Rai, Amritesh, Kang, Sangwoo, Kim, Kyounghwan, Fallahazad, Babak, Taniguchi, Takashi, Watanabe, Kenji, Tutuc, Emanuel, Banerjee, Sanjay K

“…We demonstrate dual-gated p-type field-effect transistors (FETs) based on few-layer tungsten diselenide (WSe2) using high work-function platinum source/drain…”
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Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy by Roy, Anupam, Movva, Hema C. P, Satpati, Biswarup, Kim, Kyounghwan, Dey, Rik, Rai, Amritesh, Pramanik, Tanmoy, Guchhait, Samaresh, Tutuc, Emanuel, Banerjee, Sanjay K

“…We demonstrate the growth of thin films of molybdenum ditelluride and molybdenum diselenide on sapphire substrates by molecular beam epitaxy. In situ…”
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Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits by Larentis, Stefano, Fallahazad, Babak, Movva, Hema C. P., Kim, Kyounghwan, Rai, Amritesh, Taniguchi, Takashi, Watanabe, Kenji, Banerjee, Sanjay K., Tutuc, Emanuel

“…Transition metal dichalcogenides are of interest for next generation switches, but the lack of low resistance electron and hole contacts in the same material…”
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Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures by Fallahazad, Babak, Lee, Kayoung, Kang, Sangwoo, Xue, Jiamin, Larentis, Stefano, Corbet, Christopher, Kim, Kyounghwan, Movva, Hema C. P, Taniguchi, Takashi, Watanabe, Kenji, Register, Leonard F, Banerjee, Sanjay K, Tutuc, Emanuel

“…We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current–voltage characteristics of rotationally aligned…”
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Tunable Γ -K Valley Populations in Hole-Doped Trilayer WSe2 by Movva, Hema C. P., Lovorn, Timothy, Fallahazad, Babak, Larentis, Stefano, Kim, Kyounghwan, Taniguchi, Takashi, Watanabe, Kenji, Banerjee, Sanjay K., MacDonald, Allan H., Tutuc, Emanuel

“…Not provided…”
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Visualization of Local Conductance in MoS 2 /WSe 2 Heterostructure Transistors by Wu, Di, Li, Wei, Rai, Amritesh, Wu, Xiaoyu, Movva, Hema C P, Yogeesh, Maruthi N, Chu, Zhaodong, Banerjee, Sanjay K, Akinwande, Deji, Lai, Keji

“…The vertical stacking of van der Waals (vdW) materials introduces a new degree of freedom to the research of two-dimensional (2D) systems. The interlayer…”
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Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor by Rai, Amritesh, Movva, Hema, Roy, Anupam, Taneja, Deepyanti, Chowdhury, Sayema, Banerjee, Sanjay

“…Atomically thin molybdenum disulfide (MoS2), a member of the transition metal dichalcogenide (TMDC) family, has emerged as the prototypical two-dimensional…”
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Low-Temperature Synthesis of WSe2 by the Selenization Process under Ultrahigh Vacuum for BEOL Compatible Reconfigurable Neurons by Nibhanupudi, S. S. Teja, Roy, Anupam, Chowdhury, Sayema, Schalip, Ryan, Coupin, Matthew J., Matthews, Kevin C., Alam, Md Hasibul, Satpati, Biswarup, Movva, Hema C. P., Luth, Christopher J., Wu, Siyu, Warner, Jamie H., Banerjee, Sanjay K.

“…Low-temperature large-area growth of two-dimensional (2D) transition-metal dichalcogenides (TMDs) is critical for their integration with silicon chips…”
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Two-dimensional weak anti-localization in Bi2Te3 thin film grown on Si(111)-(7 × 7) surface by molecular beam epitaxy by Roy, Anupam, Guchhait, Samaresh, Sonde, Sushant, Dey, Rik, Pramanik, Tanmoy, Rai, Amritesh, Movva, Hema C. P., Colombo, Luigi, Banerjee, Sanjay K.

“…We report on low temperature transport studies of Bi2Te3 topological insulator thin films grown on Si(111)-(7 × 7) surface by molecular beam epitaxy. A sharp…”
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Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy by Pramanik, Tanmoy, Roy, Anupam, Dey, Rik, Rai, Amritesh, Guchhait, Samaresh, Movva, Hema C.P., Hsieh, Cheng-Chih, Banerjee, Sanjay K.

“…•Perpendicular magnetic anisotropy in epitaxial Cr2Te3 has been investigated.•Presence of a relatively strong second order anisotropy contribution is…”
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Stress-induced bandgap renormalization in atomic crystals by Sun, Zheng, Beaumariage, Jonathan, Movva, Hema C.P., Chowdhury, Sayema, Roy, Anupam, Banerjee, Sanjay K., Snoke, David W.

“…Single atomic layers of two-dimensional (2D) transition metal dichalcogenides (TMDs) are promising candidates for integration of optical and electronic…”
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Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface by Park, Jun Hong, Sanne, Atresh, Guo, Yuzheng, Amani, Matin, Zhang, Kehao, Movva, Hema C P, Robinson, Joshua A, Javey, Ali, Robertson, John, Banerjee, Sanjay K, Kummel, Andrew C

“…Integration of transition metal dichalcogenides (TMDs) into next-generation semiconductor platforms has been limited due to a lack of effective passivation…”
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Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene–hBN–Graphene Interlayer Tunnel Field Effect Transistors by Kang, Sangwoo, Prasad, Nitin, Movva, Hema C. P, Rai, Amritesh, Kim, Kyounghwan, Mou, Xuehao, Taniguchi, Takashi, Watanabe, Kenji, Register, Leonard F, Tutuc, Emanuel, Banerjee, Sanjay K

“…Interlayer tunnel field-effect transistors based on graphene and hexagonal boron nitride (hBN) have recently attracted much interest for their potential as…”
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CMOS-Compatible Synthesis of Large-Area, High-Mobility Graphene by Chemical Vapor Deposition of Acetylene on Cobalt Thin Films by Ramón, Michael E, Gupta, Aparna, Corbet, Chris, Ferrer, Domingo A, Movva, Hema C. P, Carpenter, Gary, Colombo, Luigi, Bourianoff, George, Doczy, Mark, Akinwande, Deji, Tutuc, Emanuel, Banerjee, Sanjay K

“…We demonstrate the synthesis of large-area graphene on Co, a complementary metal-oxide-semiconductor (CMOS)-compatible metal, using acetylene (C2H2) as a…”
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Intra-domain periodic defects in monolayer MoS2 by Roy, Anupam, Ghosh, Rudresh, Rai, Amritesh, Sanne, Atresh, Kim, Kyounghwan, Movva, Hema C. P., Dey, Rik, Pramanik, Tanmoy, Chowdhury, Sayema, Tutuc, Emanuel, Banerjee, Sanjay K.

“…We present an ultra-high vacuum scanning tunneling microscopy study of structural defects in molybdenum disulfide thin films grown on silicon substrates by…”
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In Situ Observation of Initial Stage in Dielectric Growth and Deposition of Ultrahigh Nucleation Density Dielectric on Two-Dimensional Surfaces by Park, Jun Hong, Movva, Hema C. P, Chagarov, Evgeniy, Sardashti, Kasra, Chou, Harry, Kwak, Iljo, Hu, Kai-Ting, Fullerton-Shirey, Susan K, Choudhury, Pabitra, Banerjee, Sanjay K, Kummel, Andrew C

“…Several proposed beyond-CMOS devices based on two-dimensional (2D) heterostructures require the deposition of thin dielectrics between 2D layers. However, the…”
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Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides by Chen, Ke, Roy, Anupam, Rai, Amritesh, Movva, Hema C. P., Meng, Xianghai, He, Feng, Banerjee, Sanjay K., Wang, Yaguo

“…Defect-carrier interaction in transition metal dichalcogenides (TMDs) plays important roles in carrier relaxation dynamics and carrier transport, which…”
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Evidence of Formation of Superdense Nonmagnetic Cobalt by Banu, Nasrin, Singh, Surendra, Satpati, B., Roy, A., Basu, S., Chakraborty, P., Movva, Hema C. P., Lauter, V., Dev, B. N.

“…Because of the presence of 3 d transition metals in the Earth’s core, magnetism of these materials in their dense phases has been a topic of great interest…”
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